Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("ION IRRADIATION")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 5003

  • Page / 201

Export

Selection :

  • and

MOLECULAR EROSION OF ICE BY KEV ION BOMBARDMENTCIAVOLA G; FOTI G; TORRISI L et al.1982; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1982; VOL. 65; NO 1-4; PP. 167-172; BIBL. 11 REF.Article

SPIKE AND SHOCK PROCESSES IN HIGH ENERGY DEPOSITION DENSITY ATOMIC COLLISION EVENTS IN SOLIDSCARTER G.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 43; NO 4-5; PP. 193-199; BIBL. 25 REF.Article

RELATION ENTRE LA SECTION DE FREINAGE ELASTIQUE DES IONS ET LE NUMERO ATOMIQUE DE LA CIBLEBURLANKOV DE; VOLOD'KO VG; ZORIN EI et al.1976; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1976; VOL. 46; NO 3; PP. 629-632; BIBL. 14 REF.Article

COLLISIONS DIRIGEES D'IONS INDICATEURS CONTENANT DES NOYAUX A VIE BREVE AVEC LES ATOMES VOISINS DANS DES MONOCRISTAUXKRIVOGLAZ MA; FIKS VB.1976; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1976; VOL. 70; NO 6; PP. 2189-2200; ABS. ANGL.; BIBL. 19 REF.Article

INFLUENCE DES ACCUMULATIONS DE DEFAUTS DE SUBCASCADE SUR LE DURCISSEMENT DES METAUXKIRSANOV VV; TYUPKINA OG.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 3; PP. 518-523; BIBL. 13 REF.Article

EFFICACITE DE LA PENETRATION DES FAISCEAUX DE PARTICULES ULTRARELATIVISTES PAR UN OBSTACLE CRISTALLINTARATIN AM; VOROB'EV SA.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 1; PP. 228-230; BIBL. 8 REF.Article

IONIZATION EFFECTS IN DAMAGE PRODUCTION IN SEMICONDUCTORS.CORBETT JW; BOURGOIN JC.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 30; NO 4; PP. 255-256; BIBL. 13 REF.Article

H2 PRODUCTION IN COMETSPIRRONELLO V; STRAZZULLA G; FOTI G et al.1983; ASTRONOMY AND ASTROPHYSICS; ISSN 0004-6361; DEU; DA. 1983; VOL. 118; NO 2; PP. 341-344; BIBL. 27 REF.Article

INFLUENCE DES ELECTRONS D'UNE SUBSTANCE SUR LE FREINAGE DES IONS RAPIDESAKHIEZER IA; DAVYDOV LN; SPOL'NIK ZA et al.1978; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1978; VOL. 23; NO 4; PP. 601-606; ABS. ANGL.; BIBL. 15 REF.Article

EFFECT OF PRESSURE DIFFERENTIAL ON CHANNELING IN THIN SI CRYSTALSALEXANDER RB; JOHNSON SC; PADMANABHAN KR et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 9; PP. 804-806; BIBL. 11 REF.Article

ION-CLEANING DAMAGE IN (100) GAAS, AND ITS EFFECT ON SCHOTTKY DIODESKWAN P; BHAT KN; BORREGO JM et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 2; PP. 125-129; BIBL. 11 REF.Article

THE INFLUENCE OF NON LINEAR THERMAL DIFFUSION ON ENERGY SPIKE DEVELOPMENT AND QUENCHINGCARTER G.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 50; NO 3-6; PP. 147-151; BIBL. 9 REF.Article

A SYSTEM FOR CHANNELING EXPERIMENTS.HELLBORG R; HAKANSSON K; LINDEN M et al.1977; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1977; VOL. 140; NO 2; PP. 341-346; BIBL. 12 REF.Article

CRYSTALLIZATION INVESTIGATION OF NISI2 THIN FILMSMAENPAA M; HUNG LS; TSAUR BY et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 289-301; BIBL. 15 REF.Article

STUDY OF REARRANGEMENTS OF INTRINSIC DEFECTS AT ANNEALING OF PROTON-IRRADIATED SILICONKUZNETSOV VI; LUGAKOV PF.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 112; NO 2; PP. 457-462; ABS. RUS; BIBL. 21 REF.Article

ENERGY SPICKE GENERATION AND QUENCHING PROCESSES IN ION BOMBARDMENT INDUCED AMORPHIZATION OF SOLIDS.CARTER G; ARMOUR DG; DONNELLY SE et al.1978; RAD. EFFECTS; G.B.; DA. 1978; VOL. 36; NO 1-2; PP. 1-13; BIBL. 41 REF.Article

SONINE EXPANSION OF RANGE AND DAMAGE DISTRIBUTIONSYAMAMURA Y; INUMA H.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 38; NO 3-4; PP. 251-253; BIBL. 4 REF.Article

THE CALCULATION OF SECONDARY DEFECT FORMATION AT ION IMPLANTATION OF SILICON.MOROZOV NP; TETELBAUM DI; PAVLOV PV et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 37; NO 1; PP. 57-64; ABS. RUSSE; BIBL. 19 REF.Article

CRITICAL ANGLES OF SURFACE HYPERCHANNELINGEVDOKIMOV IN.1979; PHYS. LETT. SECT. A; ISSN 0031-9163; NLD; DA. 1979; VOL. 73; NO 5-6; PP. 417-419; BIBL. 5 REF.Article

EFFETS COHERENTS DANS LE PROCESSUS DE PERTE DES ELECTRONS PAR UN ION CANALISEBAZYLEV VA; ZHEVAGO NK.1979; ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1979; VOL. 77; NO 1; PP. 312-324; ABS. ENG; BIBL. 16 REF.Article

RECOIL IMPLANTATION OF MATERIALS.COLLIGON JS; FISCHER G; PATEL MH et al.1977; J. MATER. SCI.; G.B.; DA. 1977; VOL. 12; NO 4; PP. 829-831; BIBL. 3 REF.Article

Photoluminescence from Si: Effect of ripple microstructures induced by argon ion irradiationCHINI, T. K; DATTA, D. P; LUCHHESI, U et al.Surface & coatings technology. 2009, Vol 203, Num 17-18, pp 2690-2693, issn 0257-8972, 4 p.Conference Paper

Luminescence from Si nanocrystal grown in fused silica using keV and MeV beamMOHANTY, T; MISHRA, N. C; PRADHAN, Asima et al.Surface & coatings technology. 2005, Vol 196, Num 1-3, pp 34-38, issn 0257-8972, 5 p.Conference Paper

Electromagnetic properties of ion irradiated C60 filmsKUMAR, Amit; AVASTHI, D. K; PIVIN, J. C et al.Surface & coatings technology. 2009, Vol 203, Num 17-18, pp 2703-2706, issn 0257-8972, 4 p.Conference Paper

Fabrication of Ge nanoneedles by ion-irradiation methodMIYAWAKI, Ako; ZAMRI, M; HAYASHI, T et al.Surface & coatings technology. 2011, Vol 206, Num 5, pp 812-815, issn 0257-8972, 4 p.Conference Paper

  • Page / 201