kw.\*:("ION IRRADIATION")
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RELATION ENTRE LA SECTION DE FREINAGE ELASTIQUE DES IONS ET LE NUMERO ATOMIQUE DE LA CIBLEBURLANKOV DE; VOLOD'KO VG; ZORIN EI et al.1976; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1976; VOL. 46; NO 3; PP. 629-632; BIBL. 14 REF.Article
COLLISIONS DIRIGEES D'IONS INDICATEURS CONTENANT DES NOYAUX A VIE BREVE AVEC LES ATOMES VOISINS DANS DES MONOCRISTAUXKRIVOGLAZ MA; FIKS VB.1976; ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1976; VOL. 70; NO 6; PP. 2189-2200; ABS. ANGL.; BIBL. 19 REF.Article
INFLUENCE DES ACCUMULATIONS DE DEFAUTS DE SUBCASCADE SUR LE DURCISSEMENT DES METAUXKIRSANOV VV; TYUPKINA OG.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 3; PP. 518-523; BIBL. 13 REF.Article
EFFICACITE DE LA PENETRATION DES FAISCEAUX DE PARTICULES ULTRARELATIVISTES PAR UN OBSTACLE CRISTALLINTARATIN AM; VOROB'EV SA.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 1; PP. 228-230; BIBL. 8 REF.Article
IONIZATION EFFECTS IN DAMAGE PRODUCTION IN SEMICONDUCTORS.CORBETT JW; BOURGOIN JC.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 30; NO 4; PP. 255-256; BIBL. 13 REF.Article
THE INFLUENCE OF NON LINEAR THERMAL DIFFUSION ON ENERGY SPIKE DEVELOPMENT AND QUENCHINGCARTER G.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 50; NO 3-6; PP. 147-151; BIBL. 9 REF.Article
A SYSTEM FOR CHANNELING EXPERIMENTS.HELLBORG R; HAKANSSON K; LINDEN M et al.1977; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1977; VOL. 140; NO 2; PP. 341-346; BIBL. 12 REF.Article
CRYSTALLIZATION INVESTIGATION OF NISI2 THIN FILMSMAENPAA M; HUNG LS; TSAUR BY et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 289-301; BIBL. 15 REF.Article
STUDY OF REARRANGEMENTS OF INTRINSIC DEFECTS AT ANNEALING OF PROTON-IRRADIATED SILICONKUZNETSOV VI; LUGAKOV PF.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 112; NO 2; PP. 457-462; ABS. RUS; BIBL. 21 REF.Article
ENERGY SPICKE GENERATION AND QUENCHING PROCESSES IN ION BOMBARDMENT INDUCED AMORPHIZATION OF SOLIDS.CARTER G; ARMOUR DG; DONNELLY SE et al.1978; RAD. EFFECTS; G.B.; DA. 1978; VOL. 36; NO 1-2; PP. 1-13; BIBL. 41 REF.Article
SONINE EXPANSION OF RANGE AND DAMAGE DISTRIBUTIONSYAMAMURA Y; INUMA H.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 38; NO 3-4; PP. 251-253; BIBL. 4 REF.Article
THE CALCULATION OF SECONDARY DEFECT FORMATION AT ION IMPLANTATION OF SILICON.MOROZOV NP; TETELBAUM DI; PAVLOV PV et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 37; NO 1; PP. 57-64; ABS. RUSSE; BIBL. 19 REF.Article
CRITICAL ANGLES OF SURFACE HYPERCHANNELINGEVDOKIMOV IN.1979; PHYS. LETT. SECT. A; ISSN 0031-9163; NLD; DA. 1979; VOL. 73; NO 5-6; PP. 417-419; BIBL. 5 REF.Article
EFFETS COHERENTS DANS LE PROCESSUS DE PERTE DES ELECTRONS PAR UN ION CANALISEBAZYLEV VA; ZHEVAGO NK.1979; ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1979; VOL. 77; NO 1; PP. 312-324; ABS. ENG; BIBL. 16 REF.Article
RECOIL IMPLANTATION OF MATERIALS.COLLIGON JS; FISCHER G; PATEL MH et al.1977; J. MATER. SCI.; G.B.; DA. 1977; VOL. 12; NO 4; PP. 829-831; BIBL. 3 REF.Article
Photoluminescence from Si: Effect of ripple microstructures induced by argon ion irradiationCHINI, T. K; DATTA, D. P; LUCHHESI, U et al.Surface & coatings technology. 2009, Vol 203, Num 17-18, pp 2690-2693, issn 0257-8972, 4 p.Conference Paper
Luminescence from Si nanocrystal grown in fused silica using keV and MeV beamMOHANTY, T; MISHRA, N. C; PRADHAN, Asima et al.Surface & coatings technology. 2005, Vol 196, Num 1-3, pp 34-38, issn 0257-8972, 5 p.Conference Paper
Fabrication of Ge nanoneedles by ion-irradiation methodMIYAWAKI, Ako; ZAMRI, M; HAYASHI, T et al.Surface & coatings technology. 2011, Vol 206, Num 5, pp 812-815, issn 0257-8972, 4 p.Conference Paper
THE INVESTIGATION OF RADIOPHARMACEUTICAL COMPONENTS BY FAST ATOM BOMBARDMENT MASS SPECTROMETRY: THE IDENTIFICATION OF TE-HIDA AND THE EPIMERS OF TC-CO2 DADSCOSTELLO CE; BRODACK JW; JONES AG et al.1983; JOURNAL OF NUCLEAR MEDICINE; ISSN 0022-3123; USA; DA. 1983; VOL. 24; NO 4; PP. 353-355; BIBL. 8 REF.Article
FORMALDEHYDE FORMATION IN A H2O/CO2 ICE MIXTURE UNDER IRRADIATION BY FAST IONSPIRRONELLO V; BROWN WL; LANZEROTTI LJ et al.1982; ASTROPHYSICAL JOURNAL; ISSN 0004-637X; USA; DA. 1982; VOL. 262; NO 2; PART 1; PP. 636-640; BIBL. 2 P.Article
OUTER SHELL EXCITATION DURING ION BOMBARDMENT AND ITS APPLICATION TO SURFACE ANALYSISMACDONALD RJ.1982; APPL. SURF. SCI.; ISSN 0378-5963; NLD; DA. 1982; VOL. 13; NO 1-2; PP. 63-79; BIBL. 23 REF.Conference Paper
CALCUL DU PROFIL DE LA DISTRIBUTION DES IONS RALENTIS DANS UNE CIBLE PLANELIZUNOV YU D; RYAZANOV AI.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 1; PP. 170-172; BIBL. 6 REF.Article
A FRACTURE MODEL OF RADIATION BLISTERINGKAMADA K; HIGASHIDA Y.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 6; PP. 4131-4138; BIBL. 35 REF.Article
ALIGNMENT OF DEFECTS IN GE IMPLANTED WITH TE+ IONSPASHOV N; SIMOV S; KALITZOVA M et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 2; PP. 599-602; ABS. RUS; BIBL. 15 REF.Article
DEPOSITED ENERGY COMPUTATION FOR BINARY TARGETSJIMENEZ RODRIGUEZ JJ; RODRIGUEZ VIDAL M; VALLES ABARCA JA et al.1978; AN. FIS.; ESP; DA. 1978; VOL. 74; NO 3-4; PP. 208-212; ABS. SPA; BIBL. 10 REF.Article