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Results 1 to 25 of 857

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TEMPERATURE DEPENDENCE OF CARRIER IONIZATION RATES AND SATURATED VELOCITIES IN SILICON.DECKER DR; DUNN CN.1976; J. ELECTRON. MATER.; U.S.A.; DA. 1976; VOL. 4; NO 3; PP. 527-547; BIBL. 2 P.Article

THEORIE DE LA VARIATION PHOTOINDUITE DE L'INDICE DE REFRACTIONLEVANYUK AP; OSIPOV VV.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 12; PP. 3595-3602; BIBL. 12 REF.Article

EXCITONS BOUND TO IONIZED DONORS: APPLICATION OF THE INTERPARTICULE-COORDINATES METHODELKOMOSS SG.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 6; NO 10; PP. 3913-3917; BIBL. 25 REF.Serial Issue

IONISATION PAR LE CHAMP ELECTRIQUE DE CENTRES D'IMPURETES A NIVEAUX PROFONDS DANS LES SEMICONDUCTEURSPEREL'MAN NF.1976; FIZ. TVERD. TELA; S.S.S.R.; DA. 1976; VOL. 18; NO 4; PP. 992-997; BIBL. 14 REF.Article

ETUDE DES PROPRIETES OPTIQUES ET PHOTOELECTRIQUES DES CRISTAUX TLGASE2BAKHYSHOV AD; MUSAEVA LG; LEBEDEV AA et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 8; PP. 1548-1551; BIBL. 5 REF.Article

FIZ. TEKH. POLUPROVODN. = INTENSITES DES RAIES DANS LES SPECTRES D'ACCEPTEURS PEU PROFONDS DANS LE GERMANIUMPOLUPANOV AF; KOGAN SH M.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 12; PP. 2338-2341; BIBL. 9 REF.Article

ION NEUTRALIZATION PROCESSES AT INSULATOR SURFACES AND CONSEQUENT IMPURITY MIGRATION EFFECTS IN SIO2 FILMSMCCAUGHAN DV; KUSHNER RA; MURPHY VT et al.1973; PHYS. REV. LETTERS; U.S.A.; DA. 1973; VOL. 30; NO 13; PP. 614-617; BIBL. 12 REF.Serial Issue

ON THE POSITION OF ENERGY LEVELS RELATED TO TRANSITION-METAL IMPURITIES IN III-V SEMICONDUCTORSLEDEBO LA; RIDLEY BK.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 27; PP. L961-L964; BIBL. 26 REF.Article

PHOTOCONDUCTIVITE DUE A L'AUTOIONISATION DE CE2+ DANS CAF2, SRF2 ET BAF2PEDRINI C; PAGOST PO; MADEJ C et al.1981; J. PHYSIQUE; ISSN 0302-0738; FRA; DA. 1981; VOL. 42; NO 2; PP. 323-330; ABS. ENG; BIBL. 15 REF.Article

ENERGIE D'IONISATION D'UNE IMPURETE HYDROGENOIDE DANS LE SELENIURE DE ZINCIVANOVA GN; NEDEOGLO DD.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 1; PP. 37-40; BIBL. 16 REF.Article

CALCULATION OF THE BROADENING OF DONOR-ACCEPTOR PAIR LINES DUE TO THE POTENTIALS OF IONIZED IMPURITIESBREITENSTEIN O; UNGER K.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 91; NO 2; PP. 557-562; ABS. GER; BIBL. 8 REF.Article

IONIZATION ENERGIES OF IMPURITY ATOMS IN SI AND GE.CHAHOUD J; DONZELLI O; FERRARI L et al.1976; LETTERE NUOVO CIMENTO; ITAL.; DA. 1976; VOL. 15; NO 8; PP. 254-256; BIBL. 3 REF.Article

IONISATION PAR LE CHAMP ELECTRIQUE DES NIVEAUX DES IMPURETES PROFONDES DANS LES CRISTAUX A BANDES PERMISES PEU LARGESPEREL'MAN NF; LOGVINOV IN.1978; FIZ. TVERD. TELA; S.S.S.R.; DA. 1978; VOL. 20; NO 4; PP. 1045-1051; BIBL. 12 REF.Article

IONISATION TUNNEL DES CENTRES IN+ EXCITES DANS KCL-INLEJMAN VI.1972; FIZ. TVERD. TELA; S.S.S.R.; DA. 1972; VOL. 14; NO 12; PP. 3650-3654; BIBL. 13 REF.Serial Issue

SPECTROSCOPIC IDENTIFICATION OF SI DONORS IN GAASCOW TS; STILLMAN GE; COLLINS DM et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 12; PP. 1034-1036; BIBL. 21 REF.Article

THEORIE DE L'IONISATION A DEUX PHOTONS DES CENTRES D'IMPURETE PROFONDSIMAMOV EH Z; KREVCHIK VD.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 5; PP. 833-838; BIBL. 16 REF.Article

THERMAL IONIZATION RATES AND ENERGIES OF HOLES AT THE DOUBLE ACCEPTOR ZINC CENTERS IN SILICONHERMAN JM III; SAH CT.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 14; NO 2; PP. 405-415; ABS. ALLEM.; BIBL. 22 REF.Serial Issue

PHOTOLUMINESCENCE OF THERMALLY N+ SI-DOPED AND SEMI-INSULATING CR-DOPED GAAS SUBSTRATESSWAMINATHAN V; SCHUMAKER NE; ZILKO JL et al.1981; J. LUMIN.; ISSN 0022-2313; NLD; DA. 1981; VOL. 22; NO 2; PP. 153-170; BIBL. 38 REF.Article

STIMULATED COMPLEX FORMATIONKOTINA IM; KURYATKOV VV; NOVIKOV SR et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 60; NO 2; PP. 493-500; ABS. RUS; BIBL. 14 REF.Article

ABSORPTION OPTIQUE DES CRISTAUX KI-TL+ INDUITE PAR UN RAYONNEMENT LASER ULTRAVIOLET INTENSEBARANOV PG; DANILOV VP; ZHEKOV VI et al.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 9; PP. 2790-2796; BIBL. 15 REF.Article

NOUVEAUX DONNEURS FINS DANS LE SILICIUMSIBIRYAK EA; LIFSHITS TM; VORONKOVA GI et al.1979; PIS'MA ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1979; VOL. 30; NO 11; PP. 695-697; BIBL. 4 REF.Article

PROPRIETES ELECTROPHYSIQUES DE L'ARSENIURE DE GALLIUM TRAITE THERMIQUEMENTKRIVOV MA; MALISOVA EV; POPOVA EA et al.1973; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1973; NO 3; PP. 69-76; BIBL. 18 REF.Serial Issue

ABSORPTION SPECTRA OF RUTHENIUM IN BOROSILICATE, PHOSPHATE, AND ALUMINOBOROPHOSPHATE GLASSESMUKERJI J.1972; GLASS TECHNOL.; G.B.; DA. 1972; VOL. 13; NO 5; PP. 135-137; ABS. ALLEM. FR.; BIBL. 6 REF.Serial Issue

A NEW EXPLANATION OF THE CL DONOR DEIONIZATION AND ITS KINETICS OBSERVED IN CDTE: CL UNDER HYDROSTATIC PRESSURE.BAJ M; DMOWSKI L; KONCZYKOWSKI M et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 1; PP. 421-426; ABS. ALLEM.; BIBL. 7 REF.Article

ABSORPTION OF INFRARED RADIATION BY IONIZED DONOR PAIRS IN GAAS, INP AND CDTE.GOLKA J.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 9; PP. 1443-1449; BIBL. 19 REF.Article

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