NUCLEATION AND GROWTH OF VOIDS BY RADIATION. PREFACE TO A SERIE OF SEVEN PAPERMAYER RM; BROWN LM; GOESELE V et al.1980; J. NUCL. MATER.; ISSN 0022-3115; NLD; DA. 1980; VOL. 95; NO 1-2; PP. 44-107; BIBL. DISSEM.Article

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WIE GLEICHMAESSIG KANN MAN EINE FLAECHE BESTRAHLEN. = AVEC QUELLE UNIFORMITE UNE SURFACE PEUT-ELLE ETRE IRRADIEE.SCHERZER O.1980; OPTIK (STUTTG.); ISSN 0030-4026; DEU; DA. 1980; VOL. 56; NO 4; PP. 333-352; ABS. ENG; BIBL. 8 REF.Article

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THE CALCULATION OF SECONDARY DEFECT FORMATION AT ION IMPLANTATION OF SILICON.MOROZOV NP; TETELBAUM DI; PAVLOV PV et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 37; NO 1; PP. 57-64; ABS. RUSSE; BIBL. 19 REF.Article

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ACCELERATEUR D'IONS LOURDS D'ENERGIE 1 MEVBEZUGLYJ VV; BRESIKHIN M YU; ZELENSKIJ VF et al.1981; PRIB. TECH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 5; PP. 19-21Article

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ELECTRON DAMAGE IN ZIRCONIUM. II: NUCLEATION AND GROWTH OF C-COMPONENT LOOPSGRIFFITHS M; LORETTO MH; SMALLMAN RE et al.1983; JOURNAL OF NUCLEAR MATERIALS; ISSN 0022-3115; NLD; DA. 1983; VOL. 115; NO 2-3; PP. 323-330; BIBL. 18 REF.Article

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