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NUCLEATION AND GROWTH OF VOIDS BY RADIATION. PREFACE TO A SERIE OF SEVEN PAPERMAYER RM; BROWN LM; GOESELE V et al.1980; J. NUCL. MATER.; ISSN 0022-3115; NLD; DA. 1980; VOL. 95; NO 1-2; PP. 44-107; BIBL. DISSEM.Article

A SYSTEMATIC APPROACH TO THE RADIATION DAMAGE PROBLEM.BULLOUGH R; EYRE BL; KULCINSKI GL et al.1977; J. MATER. NUCL.; PAYS-BAS; DA. 1977; VOL. 68; NO 2; PP. 168-178; ABS. FR. ALLEM.; BIBL. 5 REF.Article

NEW REFRIGERATION SYSTEM FOR THE LOW TEMPERATURE IRRADIATION FACILITY AT KUR.ATOBE K; OKADA M; YOSHIDA U et al.1976; ANNU. REP. RES. REACTOR INST. KYOTO UNIV.; JAP.; DA. 1976; VOL. 9; PP. 139-144; BIBL. 10 REF.Article

CONSIDERATIONS SUR LES EFFETS D'IRRADIATION AU MOYEN DE METHODES THERMODYNAMIQUES IRREVERSIBLESSIROTA NN; BRZHEZINSKIJ VA.1978; DOKL. AKAD. NAUK B.S.S.R.; S.S.S.R.; DA. 1978; VOL. 22; NO 4; PP. 314-317; ABS. ANGL.; BIBL. 6 REF.Article

IONIZATION EFFECTS IN DAMAGE PRODUCTION IN SEMICONDUCTORS.CORBETT JW; BOURGOIN JC.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 30; NO 4; PP. 255-256; BIBL. 13 REF.Article

INFLUENCE OF POINT DEFECT TRAPPING ON SINK STRENGHTSBRAILSFORD AD.1981; J. NUCL. MATER.; ISSN 0022-3115; NLD; DA. 1981; VOL. 102; NO 1-2; PP. 77-86; BIBL. 15 REF.Article

ION IMPLANTATION - PROBLEMS AND PERSPECTIVESTITOV VV.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 48; NO 1; PP. 13-22; BIBL. 15 REF.Article

INFLUENCE DE LA DOSE SUR LES DEFAUTS D'IRRADIATION FORMES DE SILICIUM DE TYPE NTKACHEV VD; LUGAKOV PF; LUK'YANITSA VV et al.1978; DOKL. AKAD. NAUK B.S.S.R.; S.S.S.R.; DA. 1978; VOL. 22; NO 4; PP. 318-321; ABS. ANGL.; BIBL. 8 REF.Article

GETTERING OF OXYGEN IN SI WAFERS DAMAGED BY ION IMPLANTATION AND MECHANICAL ABRASIONMIKKELSEN JC JR.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 695-697; BIBL. 16 REF.Article

SINK STRENGTHS FOR HIGH CONCENTRATIONS OF COMPETING SINKSSCHROEDER K; FELDERHOF BU.1982; J. NUCL. MATER.; ISSN 0022-3115; NLD; DA. 1982; VOL. 105; NO 1; PP. 11-13; BIBL. 9 REF.Article

STUDY OF REARRANGEMENTS OF INTRINSIC DEFECTS AT ANNEALING OF PROTON-IRRADIATED SILICONKUZNETSOV VI; LUGAKOV PF.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 112; NO 2; PP. 457-462; ABS. RUS; BIBL. 21 REF.Article

A BOUNDARY LAYER PHENOMENON ASSOCIATED WITH POINT DEFECT TRAPPINGBRAILSFORD AD.1981; J. NUCL. MATER.; ISSN 0022-3115; NLD; DA. 1981; VOL. 102; NO 1-2; PP. 66-76; BIBL. 9 REF.Article

A RELATION BETWEEN THE ORDERING TENDENCY AND THE MAGNITUDE OF VOID SWELLING OF ALLOYAKHIEZER IA; DAVYDOV LN.1981; J. NUCL. MATER.; ISSN 0022-3115; NLD; DA. 1981; VOL. 95; NO 1-2; PP. 115-117; BIBL. 14 REF.Article

WIE GLEICHMAESSIG KANN MAN EINE FLAECHE BESTRAHLEN. = AVEC QUELLE UNIFORMITE UNE SURFACE PEUT-ELLE ETRE IRRADIEE.SCHERZER O.1980; OPTIK (STUTTG.); ISSN 0030-4026; DEU; DA. 1980; VOL. 56; NO 4; PP. 333-352; ABS. ENG; BIBL. 8 REF.Article

ENERGY SPICKE GENERATION AND QUENCHING PROCESSES IN ION BOMBARDMENT INDUCED AMORPHIZATION OF SOLIDS.CARTER G; ARMOUR DG; DONNELLY SE et al.1978; RAD. EFFECTS; G.B.; DA. 1978; VOL. 36; NO 1-2; PP. 1-13; BIBL. 41 REF.Article

SONINE EXPANSION OF RANGE AND DAMAGE DISTRIBUTIONSYAMAMURA Y; INUMA H.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 38; NO 3-4; PP. 251-253; BIBL. 4 REF.Article

THE CALCULATION OF SECONDARY DEFECT FORMATION AT ION IMPLANTATION OF SILICON.MOROZOV NP; TETELBAUM DI; PAVLOV PV et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 37; NO 1; PP. 57-64; ABS. RUSSE; BIBL. 19 REF.Article

INTERSTITIAL AND VACANCY DISTRIBUTIONS IN A SIMPLE MODEL OF RADIATION DAMAGEPAZSIT I.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 104; NO 1; PP. 119-131; ABS. GER; BIBL. 12 REF.Article

ACCELERATEUR D'IONS LOURDS D'ENERGIE 1 MEVBEZUGLYJ VV; BRESIKHIN M YU; ZELENSKIJ VF et al.1981; PRIB. TECH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 5; PP. 19-21Article

VOID LATTICE FORMATION: SPINODAL DECOMPOSITION OF VACANCIESIMADA M.1978; J. PHYS. SOC. JAP.; JPN; DA. 1978; VOL. 45; NO 5; PP. 1443-1448; BIBL. 18 REF.Article

RADIATION DAMAGE PROBLEMS IN ELECTRON MICROSCOPYHOWIE A.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 2; PP. 291-295; ABS. FRE; BIBL. 46 REF.Article

THE PRINCIPLES OF NUCLEATION THEORY RELEVANT TO THE VOID SWELLING PROBLEMCLEMENT CF; WOOD MH.1980; J. NUCL. MATER.; ISSN 0022-3115; NLD; DA. 1980; VOL. 89; NO 1; PP. 1-8; BIBL. 28 REF.Article

APPLICATION OF THE LANGEVIN METHOD TO VOID GROWTHGUROL H.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2705-2712; BIBL. 20 REF.Article

INFORMATION ABOUT THE RADIATION DAMAGE OF ORGANIC MOLECULES BY ELECTRON DIFFRACTIONREIMER L; SPRUTH J.1978; J. MICR. SPECTROSC. ELECTRON.; FRA; DA. 1978; VOL. 3; NO 6; PP. 579-590; BIBL. 27 REF.Article

THE EFFECT OF SPATIAL CORRELATIONS ON THE STEADY STATE NUCLEATION OF VOIDS.PEAK D; CORBETT JW.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 36; NO 3-4; PP. 197-203; BIBL. 15 REF.Article

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