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Results 1 to 25 of 245

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INVERSION-MODE INSULATED GATE GA0.47 IN0.53 AS FIELD-EFFECT TRANSISTORSWIEDER HH; CLAWSON AR; ELDER DI et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 3; PP. 73-74; BIBL. 9 REF.Article

ANALYSIS AND CHARACTERIZATION OF THE DEPLETION-MODE IGFETEL MANSY YA.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 3; PP. 331-340; BIBL. 11 REF.Article

DRAIN-VOLTAGE DEPENDENCE OF IGFET TURN-ON VOLTAGE.LUONG MO DANG.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 10; PP. 825-830; BIBL. 9 REF.Article

THICK FILM COMPATIBLE TRANSISTORS.AWATAR SINGH.1977; J. SCI. INDUSTR. RES.; INDIA; DA. 1977; VOL. 36; NO 3; PP. 118-120; BIBL. 7 REF.Article

RESISTIVE-GATE-INDUCED THERMAL NOISE IN IGFET'STHORNBER KK.1981; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1981; VOL. 16; NO 4; PP. 414-415; BIBL. 3 REF.Article

DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOROGURA S; TSANG PJ; WALKER WW et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 424-432; BIBL. 23 REF.Article

A GENERAL FOUR-TERMINAL CHARGING-CURRENT MODEL FOR THE INSULATED-GATE FIELD-EFFECT TRANSISTOR. IROBINSON JA; EL MANSY YA; BOOTHROYD AR et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 405-410; BIBL. 8 REF.Article

DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOROGURA S; TSANG PJ; WALKER WW et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1359-1367; BIBL. 23 REF.Article

RESISTANCE LINEAIRE COMMANDEE PAR UNE TENSION.ZOLOTOVA NM.1978; PRIBORY TEKH. EKSPER.; SUN; DA. 1978; VOL. 6; NO 1; PP. 116-117; BIBL. 4 REF.Article

OFFSET CHANNEL INSULATED GATE FIELD-EFFECT TRANSISTORSCHEN CY; CHO AY; GOSSARD AC et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 360-362; BIBL. 16 REF.Article

A GENERAL FORMULATION OF THE PARAMETERS OF THE EQUIVALENT CIRCUIT MODEL OF THE IGFET. IIEL MANSY YA; BOOTHROYD AR.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 411-414; BIBL. 4 REF.Article

SUBTHRESHOLD BEHAVIOUR OF E.S.F.I.-S.O.S. TRANSISTORS.KRANZER D; FICHTNER W.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 6; PP. 161-162; BIBL. 5 REF.Article

BORON SEGREGATION DATA FOR D. M.O.S. DEVICES.LADBROOKE PH; STRUDWICK MN.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 5; PP. 128-129; BIBL. 6 REF.Article

ION-IMPLANTED THRESHOLD TAILORING FOR INSULATED GATE FIELD-EFFECT TRANSISTORS.TROUTMAN RR.1977; I.E.E.E. TRANS ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 182-192; BIBL. 24 REF.Article

A NEW APPROACH TO THE THEORY AND MODELING OF INSULATED-GATE FIELD-EFFECT TRANSISTORS.EL MANSY YA; BOOTHROYD AR.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 241-253; BIBL. 20 REF.Article

SMALL-SIGNAL SUBTHRESHOLD MODEL FOR I.G.F.E.T.S.BARKER RWJ.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 10; PP. 260-262; BIBL. 7 REF.Article

COMPOSITE SILICATE GATE ELECTRODES-INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIESGEIPEL HJ JR; NING HSIEH; ISHAQ MH et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1417-1424; BIBL. 23 REF.Article

IGFET HOT ELECTRON EMISSION MODELNARITA K; YAMAGUCHI K.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 7; PP. 721-725; BIBL. 5 REF.Article

PROCESS MODELING AND DESIGN PROCEDURE FOR IGFET THRESHOLDSGEIPEL HJ JR; FORTINO AG.1979; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 2; PP. 430-435; BIBL. 21 REF.Article

RIGFET ARRAYS SIMPLIFY ANALOG-TO-DIGITAL CONVERSION.1977; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1977; VOL. 16; NO 2; PP. 181-182Article

EFFECT OF EVAPORATED DIELECTRIC MATERIALS ON THE SURFACE OF HIGH PURITY GERMANIUM.DINGER RJ.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 9; PP. 1398-1404; BIBL. 25 REF.Article

THRESHOLD INSTABILITY IN IGFET'S DUE TO EMISSION OF LEAKAGE ELECTRONS FROM SILICON SUBSTRATE INTO SILICON DIOXIDE.NING TH; OSBURN CM; YU HN et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 3; PP. 198-200; BIBL. 20 REF.Article

IMPLANTED SOURCE/DRAIN JUNCTIONS FOR POLYSILICON GATE TECHNOLOGIESGEIPEL HJ; SHASTEEN RB.1980; I.B.M. J. RES. DEVELOP.; USA; DA. 1980; VOL. 24; NO 3; PP. 362-369; BIBL. 19 REF.Article

SUB-THRESHOLD LEAKAGE CURRENTS IN WEAKLY INVERTED SHORT CHANNEL IGFETSMOHAN RAO GR.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 8; PP. 729-734; BIBL. 41 REF.Article

GA AS MAOSFET MEMORY TRANSISTOR.BAYRAKTAROGLU B; COLQUHOUN A; HARTNAGEL HL et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 1; PP. 19-21; BIBL. 4 REF.Article

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