Vertikal'naya zonal'nost' uranonosnykh ehjsitovIVANOV, P. A.Izvestiâ Akademii nauk SSSR. Seriâ geologičeskaâ. 1986, Num 8, pp 68-75, issn 0321-1703Article

High temperature silicon carbide stabilitrons for the voltage range from 4 to 50 VANDREEV, A. N; ANIKIN, M. M; ZELENIN, V. V et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 29, Num 1-3, pp 190-193, issn 0921-5107Conference Paper

Experimental field-effect transistor based on a 4H silicon carbide polymorphANIKIN, M. M; IVANOV, P. A; RASTEGAEV, V. P et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 1, pp 53-56, issn 1063-7826Article

Recent developments in SiC single-crystal electronicsIVANOV, P. A; CHELNOKOV, V. E.Semiconductor science and technology. 1992, Vol 7, Num 7, pp 863-880, issn 0268-1242Article

Propriétés magnétiques du système supraconducteur à oxyde YBa2Cu3O6,5+yALEKSANDROV, V. I; BORIK, M. A; PROKHOROV, A. M et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1987, Vol 46, pp 90-93, issn 0370-274XArticle

Fast turn-off of high voltage 4H-SiC npn BJTs from the saturation on-state regimeIVANOV, P. A; LEVINSHTEIN, M. E; PALMOUR, J. W et al.Semiconductor science and technology. 2010, Vol 25, Num 4, issn 0268-1242, 045030.1-045030.3Article

Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperaturesRUMYANTSEV, S. L; SHUR, M. S; LEVINSHTEIN, M. E et al.Semiconductor science and technology. 2009, Vol 24, Num 7, issn 0268-1242, 075011.1-075011.6Article

Current gain of 4H-SiC high-voltage BJTs at reduced temperaturesIVANOV, P. A; LEVINSHTEIN, M. E; PALMOUR, J. W et al.Semiconductor science and technology. 2007, Vol 22, Num 6, pp 613-615, issn 0268-1242, 3 p.Article

Transient characteristics of a 1.8 kV, 3.8 A 4H-SiC bipolar junction transistorIVANOV, P. A; LEVINSHTEIN, M. E; AGARWAL, A. K et al.Semiconductor science and technology. 2001, Vol 16, Num 6, pp 521-525, issn 0268-1242Article

Magnetic flux leakage modeling for mechanical damage in transmission pipelinesIVANOV, P. A; ZHANG, Z; YEOH, C. H et al.IEEE transactions on magnetics. 1998, Vol 34, Num 5, pp 3020-3023, issn 0018-9464, 1Conference Paper

An internal ribosome entry site located upstream of the crucifer-infecting tobamovirus coat protein (CP) gene can be used for CP synthesis in vivoDOROKHOV, Yu. L; IVANOV, P. A; KOMAROVA, T. V et al.Journal of general virology. 2006, Vol 87, pp 2693-2697, issn 0022-1317, 5 p., 9Article

Metal-oxide-semiconductor capacitor formed from thermally oxidized n-type 6H-SiC with the (0001)C orientationIVANOV, P. A; PANTELEEV, V. N; SAMSONOVA, T. P et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 7, pp 631-635, issn 1063-7826Article

Capacité de service des éléments d'étanchéité en polymère-élastomère d'assemblages mobilesMATYUSHIN, E. G; REGUSH, L. A; SMUL'SKAYA, EH. M et al.Plastičeskie massy. 1988, Num 8, pp 28-30, issn 0554-2901Article

Expérience de la combustion de lignites de basse qualitéIVANOV, P. A; VINOKUROV, M. KH; IVANOV, YU. S et al.Energo-mašinostroenie. 1984, Num 2, pp 29-33Article

State reconstruction of a qutrit by a minimal set of discrete measurementsIVANOV, P. A; VITANOV, N. V.Optics communications. 2006, Vol 264, Num 2, pp 368-374, issn 0030-4018, 7 p.Article

Analysis of the turn-on process in 6 kV 4H-SiC junction diodesMNATSAKANOV, T. T; LEVINSHTEIN, M. E; IVANOV, P. A et al.Semiconductor science and technology. 2005, Vol 20, Num 1, pp 62-67, issn 0268-1242, 6 p.Article

Effective carrier density in porous silicon carbideIVANOV, P. A; MYNBAEVA, M. G; SADDOW, S. E et al.Semiconductor science and technology. 2004, Vol 19, Num 3, pp 319-322, issn 0268-1242, 4 p.Article

CDMA equalizer quantizationSEXTON, T. A; HEIKKILA, M. J; LILLEBERG, J et al.IEEE Global Telecommunications Conference. 2004, pp 2318-2322, isbn 0-7803-8794-5, 5 p.Conference Paper

Mobility enhancement in AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistorsLEVINSHTEIN, M. E; IVANOV, P. A; ASIF KHAN, M et al.Semiconductor science and technology. 2003, Vol 18, Num 7, pp 666-669, issn 0268-1242, 4 p.Article

Computer simulations for comparison of pattern recognition based on different variants of distortion invariant correlation filtersEVTIKHIEV, N. N; IVANOV, P. A; LYAPIN, A. S et al.SPIE proceedings series. 2003, pp 220-227, isbn 0-8194-5155-X, 8 p.Conference Paper

Essai d'utilisation d'un charbon non prévu au projet dans une chaudière BZK-220-100IVANOV, P. A; IVANOV, YU. S; POZDNYAK, A. M et al.Ènergomašinostroenie. 1987, Num 2, pp 41-44, issn 0131-1336Article