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Results 1 to 25 of 6101

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Negatively charged donor centers in ultrathin ZnSe:N layersSTRAUF, S; MICHLER, P; GUTOWSKI, J et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 245-250, issn 0370-1972Conference Paper

Intrinsic defects of ZnS epitaxial layers grown by MOVPEYOSHINO, K; KOMAKI, H; PRETE, P et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 351-354, issn 0370-1972Conference Paper

Displaced substitutional phosphorus acceptors in zinc selenideWOLVERSON, D; DAVIES, J. J; STRAUF, S et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 257-260, issn 0370-1972Conference Paper

The path to ZnO devices: donor and acceptor dynamicsLOOK, D. C; JONES, R. L; SIZELOVE, J. R et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 1, pp 171-177, issn 0031-8965, 7 p.Conference Paper

Doping induced defects of Cd1-xZnxTe grown from Te solutionSUZUKI, K; INAGAKI, K; KIMURA, N et al.Physica status solidi. A. Applied research. 1995, Vol 147, Num 1, pp 203-210, issn 0031-8965Article

Spin-flip Raman scattering studies of ZnSe bulk crystals doped with antimonyDAVIES, J. J; WOLVERSON, D; ALIEV, G. N et al.Semiconductor science and technology. 2003, Vol 18, Num 11, pp 978-982, issn 0268-1242, 5 p.Article

A comparative study of the near band edge luminescence of epitaxial ZnSe:N grown by MBE and MOVPEGURSKII, A. L; HAMADEH, H; KALISCH, H et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 333-337, issn 0370-1972Conference Paper

Properties of MBE-grown ZnBeSe: Study of Be isoelectronic traps and of dopant behaviorKUSKOVSKY, I. L; GU, Y; VAN DER VOORT, M et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 239-243, issn 0370-1972Conference Paper

A study of the excess carrier dynamics in ZnSe based structures grown by molecular beam epitaxyMASSA, J. S; BULLER, G. S; WALKER, A. C et al.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 402-405, issn 0022-0248Conference Paper

Lattice sites of phosphorus in ZnMnTe: A compensation studyVAN KHOI, L. E; KACZOR, P; KOWSKI, M et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 287-290, issn 0370-1972Conference Paper

Spin selection rules in radiative and nonradiative recombination processes in bulk crystals and in thin films of II-VI compoundsGODLEWSKI, M; IVANOV, V. Yu; KHACHAPURIDZE, A et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 1, pp 533-542, issn 0370-1972Conference Paper

Simultaneous photo-excitation of Li acceptor and shallow donors in ZnSeNAKATA, H; YAMADA, K; ITAZAKI, Y et al.Physica. B, Condensed matter. 2001, Vol 302-03, pp 277-281, issn 0921-4526Conference Paper

Ab initio energy calculation of nitrogen-related defects in ZnSeGUNDEL, S; ALBERT, D; NÜRNBERGER, J et al.Journal of crystal growth. 2000, Vol 214-15, pp 474-477, issn 0022-0248Conference Paper

Analysis of charge-transfer and charge-conserving optical transitions at vanadium ions in CdTeSELBER, H. R; PEKA, P; BIERNACKI, S. W et al.Semiconductor science and technology. 1999, Vol 14, Num 6, pp 521-527, issn 0268-1242Article

Electronic properties of A centers in CdTe : a comparison with experimentBIERNACKI, S; SCHERZ, U; MEYER, B. K et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 16, pp 11726-11731, issn 0163-1829Article

Influence of space charge on lux-ampere characteristics of high-resistivity CdTeFRANC, J; GRILL, R; KUBAT, J et al.Journal of electronic materials. 2006, Vol 35, Num 5, pp 988-992, issn 0361-5235, 5 p.Article

Effect of laser annealing on the distribution of defect levels in CdSe filmsPAL, U; MUNOZ-AVILA, S; PRADO-GONZALEZ, L et al.Thin solid films. 2001, Vol 381, Num 1, pp 155-159, issn 0040-6090Article

Infrared absorption of Li acceptors in ZnSeNAKATA, H; YAMADA, K; OHYAMA, T et al.Journal of crystal growth. 2000, Vol 214-15, pp 533-536, issn 0022-0248Conference Paper

Properties of the nitrogen acceptor in Zn1-xMgxSe alloys with varying Mg concentrationMORHAIN, C; SEGHIER, D; VÖGELE, B et al.Journal of crystal growth. 2000, Vol 214-15, pp 482-486, issn 0022-0248Conference Paper

Radiative properties of n-ZnSe single crystals doped with AgIVANOVA, G. N; KASIVAN, V. A; NEDEOGLO, D. D et al.SPIE proceedings series. 1999, pp 127-128, isbn 0-8194-3161-3Conference Paper

Photoluminescence study of radiative transitions in ZnTe bulk crystalsGARCIA, J. A; REMON, A; MUNOZ, V et al.Journal of crystal growth. 1998, Vol 191, Num 4, pp 685-691, issn 0022-0248Article

Effect of the post-As+-implantation thermal treatment on MBE HgCdTe optical propertiesGUO, S. P; CHANG, Y; ZHANG, J. M et al.Journal of electronic materials. 1996, Vol 25, Num 4, pp 761-764, issn 0361-5235Conference Paper

Compensating processes in nitrogen δ-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopyZHU, Z; BROWNLIE, G. D; HORSBURGH, G et al.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 248-251, issn 0022-0248Conference Paper

Photoluminescence of p-CdTe : characterization of impurity centers by phonon sidebandsCERTIER, M; SOLTANI, M; EVRARD, R et al.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 879-882, issn 0022-0248Conference Paper

Impurity levels of alkaline metals in zincselenide single crystals examined by photoluminescenceYOSHINO, K; MATSUSHIMA, Y; HIRAMATSU, M et al.Japanese journal of applied physics. 1995, Vol 34, Num 1, pp 61-65, issn 0021-4922, 1Article

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