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Results 1 to 25 of 5367

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Photoluminescence in cylindrical quantum well wires in the presence of shallow impurities and magnetic fieldPEREZ-MERCHANCANO, S. T; MARQUES, G. E.Physica status solidi. B. Basic research. 1999, Vol 212, Num 2, pp 375-381, issn 0370-1972Article

Time- and temperature-resolved photoluminescence of GaN:Mg epitaxial layers grown by MOVPEGURSKII, A. L; MARKO, I. P; LUTSENKO, E. V et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 2, pp 361-364, issn 0370-1972Conference Paper

Impurity-related emission in the photoluminescence from p-type modulation doped Al1-xGaxAs/GaAs heterostructuresBRYJA, L; KUBISA, M; RYCZKO, K et al.Solid state communications. 2002, Vol 122, Num 7-8, pp 379-384, issn 0038-1098Article

Deep levels in Ti-doped GaAs epilayers grown on undoped GaAs (100) substratesWUI, Y. H; KANG, T. W; KIM, T. W et al.Applied surface science. 1999, Vol 148, Num 3-4, pp 211-214, issn 0169-4332Article

Hydrogen in Be-doped GaInAsP lattice matched to InP : diffusion and interactions with dopantsGERARD, F; THEYS, B; LUSSON, A et al.Semiconductor science and technology. 1999, Vol 14, Num 12, pp 1136-1140, issn 0268-1242Article

Excitation mechanisms of multiple Er3+ sites in Er-implanted GaN : III-V nitrides and silicon carbideKIM, S; RHEE, S. J; LI, X et al.Journal of electronic materials. 1998, Vol 27, Num 4, pp 246-254, issn 0361-5235Article

Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaNREYNOLDS, D. C; LOOK, D. C; JOGAI, B et al.Solid state communications. 1997, Vol 101, Num 9, pp 643-646, issn 0038-1098Article

Effect of annealing and hydrogenation on neutron-transmutation-doped GaAsCHO, H. D; SHON, Y; KANG, T. W et al.Physica status solidi. A. Applied research. 1994, Vol 146, Num 2, pp 603-611, issn 0031-8965Article

Effect of heat treatment on the state of Si impurity in GaAs studied with the photoluminescence techniqueSUEZAWA, M; KASUYA, A; NISHINA, Y et al.Journal of applied physics. 1993, Vol 73, Num 6, pp 3035-3040, issn 0021-8979Article

Formation of four new shallow emissions in Mn+ ion-implanted GaAs grown by molecular beam epitaxy having extremely low concentration of background impuritiesHONGLIE SHEN; MAKITA, Y; NIKI, S et al.Applied physics letters. 1993, Vol 63, Num 13, pp 1780-1782, issn 0003-6951Article

Kinetics of luminescence of isoelectronic rare-earth ions in III-V semiconductorsLOZYKOWSKI, H. J.Physical review. B, Condensed matter. 1993, Vol 48, Num 24, pp 17758-17769, issn 0163-1829Article

Effects of residual C and O impurities on photoluminescence in undoped GaN epilayersJUNYONG KANG; YAOWEN SHEN; ZHANGUO WANG et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 303-307, issn 0921-5107Conference Paper

The 3.466 eV bound exciton in GaNMONEMAR, B; CHEN, W. M; PASKOV, P. P et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 2, pp 489-492, issn 0370-1972Conference Paper

Defects and defect identification in group III-nitridesMEYER, B. K; HOFMANN, D. M; ALVES, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 69-76, issn 0921-5107Conference Paper

Passivation of shallow and deep by hyrogen plasma exposure in alGAAs growth by molecular beam epitaxyBOSACCHI, A; FRANCHI, S; GOMBIA, E et al.Japanese journal of applied physics. 1994, Vol 33, Num 6A, pp 3348-3353, issn 0021-4922, 1Article

Photoluminescence properties of (Al,Ga)As alloys and GaAs under pressure in the framework of DX centers studiesLEROUX, M.Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum. 1994, Vol 108, pp 97-122, issn 1012-0386Article

Electron structure of rare-earth impurities in III-V compounds (a review article)MASTEROV, V. F; TYBULEWICZ, A.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 9, pp 791-801, issn 1063-7826Article

Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxyXU, S. J; OR, C. T; LI, Q et al.Physica status solidi. A. Applied research. 2001, Vol 188, Num 2, pp 681-685, issn 0031-8965Conference Paper

Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxyXU, H. Z; WANG, Z. G; HARRISON, I et al.Journal of crystal growth. 2000, Vol 217, Num 3, pp 228-232, issn 0022-0248Article

Photoluminescence from transmuted impurities in neutron-transmutation-doped semi-insulating GaPKURIYAMA, K; OHBORA, K; OKADA, M et al.Solid state communications. 2000, Vol 113, Num 7, pp 415-418, issn 0038-1098Article

p-Type co-doping study of GaN by photoluminescenceZHANG, J.-P; SUN, D.-Z; WANG, X.-L et al.Journal of crystal growth. 1999, Vol 197, Num 1-2, pp 368-371, issn 0022-0248Article

Defect-related luminescence of Mg-doped n-GaN grown by hydride vapour-phase epitaxyCHUL LEE; KIM, J.-E; HAE YONG PARK et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 48, pp 11103-11110, issn 0953-8984Article

Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition. Part IV: 0.96 eV photoluminescence emissionJIACHANG LIANG; JIALONG ZHAO; YING GAO et al.Journal of materials science letters. 1996, Vol 15, Num 3, pp 189-191, issn 0261-8028Article

Reduction of deep level impurities in Zn-doped AlxGa1-xAs by a Co-dopant techniqueCHEN, J. C; HUANG, Z. C; TAO YU et al.Japanese journal of applied physics. 1995, Vol 34, Num 4B, pp L476-L478, issn 0021-4922, 2Article

Passivation on deep levels in low energy Li-ion-implanted HB GaAsKANG, T. W; BAI, I. H; CHUNG, C. K et al.Physica status solidi. A. Applied research. 1994, Vol 142, Num 2, pp K85-K89, issn 0031-8965Article

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