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Amorphisierungsverhalten von Molybdändisilicidschichten bei der Ionenimplantation = Amorphization of MoSi2 by ion implantationUNGER, W; ZIELKE, D; KOTZERKE, M et al.Wissenschaftliche Zeitschrift der Technischen Universität Karl-Marx-Stadt. 1990, Vol 32, Num 5, pp 685-693, issn 0863-0615, 9 p.Article

Photoacoustic monitoring of damage in ion implanted and annealed Si layersLUCIANI, L; ZAMMIT, U; MARINELLI, M et al.Applied physics. A, Solids and surfaces. 1989, Vol 49, Num 2, pp 205-209, issn 0721-7250, 5 p.Article

Influence of Ro radiation upon ion-implanted MOS structuresKASCHIEVA, S; DJAKOV, A.Radiation effects. 1986, Vol 87, Num 4, pp 185-189, issn 0033-7579Article

Smart cut<TM> transfer of 300 mm (110) and (100) Si layers for hybrid orientation technologyBOURDELLE, K. K; AKATSU, T; CHARVET, A.-M et al.IEEE international SOI conference. 2004, pp 98-99, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

High-dose neutron generation from plasma ion implantationUHM, H. S; LEE, W. M.Journal of applied physics. 1991, Vol 69, Num 12, pp 8056-8063, issn 0021-8979Article

Implantation-enhanced oxidation of tantalum for capacitor structuresMOHAMMED, M. A; MORGAN, D. V; NOBES, M et al.Electronics Letters. 1989, Vol 25, Num 5, pp 329-330, issn 0013-5194, 2 p.Article

Laser-induced photothermal reflectance investigation of silicon damaged by arsenic ion implantation: a temperature studyVITKIN, I. A; CHRISTOFIDES, C; MANDELIS, A et al.Applied physics letters. 1989, Vol 54, Num 24, pp 2392-2394, issn 0003-6951, 3 p.Article

Study of plasma ion implanted hydrogen in semi-insulating GaAsSOM, T; DHAR, S; MOHAPATRA, Y. N et al.SPIE proceedings series. 1998, pp 369-372, isbn 0-8194-2756-X, 2VolConference Paper

EPR and TSCR investigations of implanted Al-SiO2-Si systems treated with RF plasma discharge = Etudes EPR et TSCR de systèmes d'ions implantés dans Al-SiO2-Si traités par décharge RF (radio fréquence) de PlasmaLYSENKO, V. S; NAZAROV, A. N; VALIEV, S. A et al.Physica status solidi. A. Applied research. 1989, Vol 113, Num 2, pp 653-665, issn 0031-8965Article

On the dynamic inventory of deuterium implanted in graphiteSCHERZER, B. M. U.Journal of nuclear materials. 1989, Vol 168, Num 1-2, pp 121-124, issn 0022-3115, 4 p.Article

Device dependence of charging effects from high-current ion implantationFELCH, S. B; BASRA, V. K; MCKENNA, C. M et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2338-2342, issn 0018-9383Article

Scaling down your surfacesMÜLLER-STENHAGEN, H.Chemical engineer (London). 1996, Num 613, pp 12-14, issn 0302-0797Article

Anomalous distribution of As during implantation in silicon under self-annealing conditionsLULLI, G; MERLI, P. G; RIZOLI, R et al.Journal of applied physics. 1989, Vol 66, Num 7, pp 2940-2946, issn 0021-8979, 7 p.Article

Post-implantation as an aid in scale calibration for SIMS depth profilingZALM, P. C; JANSSEN, K. T. F; FONTIJN, G. M et al.Surface and interface analysis. 1989, Vol 14, Num 11, pp 781-786, issn 0142-2421, 6 p.Article

Some studies of BF2 and B+F implanted siliconVIRDI, G. S; JAGDISH LAL; PATHAK, B. C et al.Radiation effects. 1988, Vol 106, Num 4, pp 311-318, issn 0033-7579Article

A modified ion source for semiconductor implantation purposesLATUSZYNSKI, A; MACZKA, D; YUSHKIEVICH, Y. V et al.Vacuum. 1986, Vol 36, Num 5, pp 263-265, issn 0042-207XArticle

Simulation study of implant dose sensitivity of a 0.1 μm NMOSFETSRINIVASAIAH, H. C; BHAT, Navakanta.SPIE proceedings series. 2002, pp 699-702, isbn 0-8194-4500-2, 2VolConference Paper

3-inch single-crystal LiTaO3 films onto metallic electrode using Smart Cut™ technologyTAUZIN, A; DECHAMP, J; YOSHIMI, M et al.Electronics Letters. 2008, Vol 44, Num 13, pp 822-824, issn 0013-5194, 3 p.Article

Ion sheath evolution and current characteristics for a trench immersed in a titanium cathodic arc dischargeYUKIMURA, Ken; XINXIN MA; IKEHATA, Takashi et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 73-76, issn 0257-8972, 4 p.Conference Paper

Compressive stress, preferred orientation and film composition in Ti-based coatings developed by plasma immersion ion implantation-assisted depositionMUKHERJEE, S; PROKERT, F; RICHTER, E et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 99-103, issn 0257-8972, 5 p.Conference Paper

Effect of annealing on structure and biomedical properties of amorphous hydrogenated carbon filmsYANG, P; CHEN, J. Y; LENG, Y. X et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 125-130, issn 0257-8972, 6 p.Conference Paper

Multi-dipolar plasmas for plasma-based ion implantation and plasma-based ion implantation and depositionBECHU, S; MAULAT, O; ARNAL, Y et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 170-176, issn 0257-8972, 7 p.Conference Paper

Plasma source ion implantation using high-power pulsed RF plasmaSEUNGHEE HAN; YEONHEE LEE; KIM, Young-Woo et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 177-181, issn 0257-8972, 5 p.Conference Paper

Plasma surface modification of titanium for hard tissue replacementsXUANYONG LIU; POON, Ray W. Y; KWOK, Sunny C. H et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 227-233, issn 0257-8972, 7 p.Conference Paper

Plasma-based ion implantation: a valuable industrial route for the elaboration of innovative materialsVEMPAIRE, D; MIRAGLIA, S; SULPICE, A et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 245-247, issn 0257-8972, 3 p.Conference Paper

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