Smart cut<^TM> transfer of 300 mm (110) and (100) Si layers for hybrid orientation technologyBOURDELLE, K. K; AKATSU, T; CHARVET, A.-M et al.IEEE international SOI conference. 2004, pp 98-99, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

High-dose neutron generation from plasma ion implantationUHM, H. S; LEE, W. M.Journal of applied physics. 1991, Vol 69, Num 12, pp 8056-8063, issn 0021-8979Article

Implantation-enhanced oxidation of tantalum for capacitor structuresMOHAMMED, M. A; MORGAN, D. V; NOBES, M et al.Electronics Letters. 1989, Vol 25, Num 5, pp 329-330, issn 0013-5194, 2 p.Article

Laser-induced photothermal reflectance investigation of silicon damaged by arsenic ion implantation: a temperature studyVITKIN, I. A; CHRISTOFIDES, C; MANDELIS, A et al.Applied physics letters. 1989, Vol 54, Num 24, pp 2392-2394, issn 0003-6951, 3 p.Article

Study of plasma ion implanted hydrogen in semi-insulating GaAsSOM, T; DHAR, S; MOHAPATRA, Y. N et al.SPIE proceedings series. 1998, pp 369-372, isbn 0-8194-2756-X, 2VolConference Paper

EPR and TSCR investigations of implanted Al-SiO₂-Si systems treated with RF plasma discharge = Etudes EPR et TSCR de systèmes d'ions implantés dans Al-SiO₂-Si traités par décharge RF (radio fréquence) de PlasmaLYSENKO, V. S; NAZAROV, A. N; VALIEV, S. A et al.Physica status solidi. A. Applied research. 1989, Vol 113, Num 2, pp 653-665, issn 0031-8965Article

On the dynamic inventory of deuterium implanted in graphiteSCHERZER, B. M. U.Journal of nuclear materials. 1989, Vol 168, Num 1-2, pp 121-124, issn 0022-3115, 4 p.Article

Device dependence of charging effects from high-current ion implantationFELCH, S. B; BASRA, V. K; MCKENNA, C. M et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2338-2342, issn 0018-9383Article

Simulation study of implant dose sensitivity of a 0.1 μm NMOSFETSRINIVASAIAH, H. C; BHAT, Navakanta.SPIE proceedings series. 2002, pp 699-702, isbn 0-8194-4500-2, 2VolConference Paper

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Estimation of plasma density in after-glow region of RF burst plasma based on voltage-current characteristicsWATANABE, Satoshi; TANAKA, Takeshi; TAKAGI, Toshinori et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 53-56, issn 0257-8972, 4 p.Conference Paper

Molybdenum-carbon film fabricated using metal cathodic arc and acetylene dual plasma depositionFU, Ricky K. Y; MEI, Y. F; SHEN, L. R et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 112-117, issn 0257-8972, 6 p.Conference Paper

Generation of self-ignition plasma and extracted ion current in a burst RF inductively coupled plasma of carbon-containing gasesWATANABE, Satoshi; TANAKA, Takeshi; TAKAGI, Toshinori et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 187-189, issn 0257-8972, 3 p.Conference Paper

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Self-magnetic drive of a shunting arcTAKAKI, K; HASEGAWA, R; NAKAMURA, S et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 182-186, issn 0257-8972, 5 p.Conference Paper

Time-resolved plasma measurement in a high-power pulsed ICP source for large areaKIM, Young-Woo; JUNG, Young-Dae; SEUNGHEE HAN et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 161-164, issn 0257-8972, 4 p.Conference Paper

Treatment of polymers by plasma immersion ion implantation for space applicationsTAN, I. H; UEDA, M; DALLAQUA, R. S et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 234-238, issn 0257-8972, 5 p.Conference Paper

Two-dimensional numerical simulation of non-uniform plasma immersion ion implantationTIAN, X. B; YANG, S. Q; HUANG, Y. X et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 47-52, issn 0257-8972, 6 p.Conference Paper

USJ formation using pulsed plasma dopingSCHEUER, J. T; LENOBLE, D; KOO, B. W et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 57-61, issn 0257-8972, 5 p.Conference Paper

Proceedings of the 7th International Workshop on Plasma-Based Ion Implantation, San Antonio, Texas, 16-19 September, 2003MATTHEWS, A; SPROUL, W. D; ARPS, James H et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, issn 0257-8972, 339 p.Conference Proceedings

Distribution of implanted current on trench-shaped targets in plasma-based ion implantation and depositionXINXIN MA; YUKIMURA, Ken.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 88-92, issn 0257-8972, 5 p.Conference Paper

Metal plasma source for PBII using arc-like discharge with hot cathodeCHAYAHARA, A; MOKUNO, Y; KINOMURA, A et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 157-160, issn 0257-8972, 4 p.Conference Paper

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Plasma processes for wide fabric, film and non-wovensKAPLAN, Stephen.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 214-217, issn 0257-8972, 4 p.Conference Paper

Modification of polymers by plasma-based ion implantation for biomedical applicationsMCKENZIE, D. R; NEWTON-MCGEE, K; RUCH, P et al.Surface & coatings technology. 2004, Vol 186, Num 1-2, pp 239-244, issn 0257-8972, 6 p.Conference Paper