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Possibilité d'une fluctuation dans la formation de la phase amorphe dans le processus d'implantation ioniqueKOMAROV, F. F; MOROSHKIN, N. V.Žurnal tehničeskoj fiziki. 1984, Vol 54, Num 9, pp 1836-1837, issn 0044-4642Article

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Comparison between conventional and plasma source ion-implanted femoral knee componentsCHEN, A; SCHEUER, J. T; RITTER, C et al.Journal of applied physics. 1991, Vol 70, Num 11, pp 6757-6760, issn 0021-8979Article

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An analytical model for the narrow-width effect in ion-implanted MOSFETLAI, P. T; CHENG, Y. C.Solid-state electronics. 1984, Vol 27, Num 7, pp 639-649, issn 0038-1101Article

Modifications par implantation ionique de l'endommagement par fatigue du cuivre = Modifications in fatigue damage of Cu induced by ion implantationMENDEZ, J; QUINTARD, M; VIOLAN, P et al.Annales de chimie (Paris. 1914). 1984, Vol 9, Num 3, pp 311-313, issn 0151-9107Article

Application of ion implantation for doping of polyacetylene filmsKOSHIDA, N; WACHI, Y.Applied physics letters. 1984, Vol 45, Num 4, pp 436-437, issn 0003-6951Article

Nitrogen implantation of suspended graphene flakes: Annealing effects and selectivity of sp² nitrogen speciesSCARDAMAGLIA, M; ALEMAN, B; GREGORATTI, L et al.Carbon (New York, NY). 2014, Vol 73, pp 371-381, issn 0008-6223, 11 p.Article

Effect of drifting carriers on longitudinal electro-kinetic waves in ion-implanted semiconductor plasmasGHOSH, S; THAKUR, P.The European physical journal. D, Atomic, molecular and optical physics (Print). 2005, Vol 35, Num 3, pp 449-452, issn 1434-6060, 4 p.Article

Surface modification of NiTi for orthopaedic braces by plasma immersion ion implantationMÄNDL, S; GERLACH, J. W; RAUSCHENBACH, B et al.Surface & coatings technology. 2005, Vol 196, Num 1-3, pp 293-297, issn 0257-8972, 5 p.Conference Paper

Simulation study of implant dose sensitivity of a 0.1 μm NMOSFETSRINIVASAIAH, H. C; BHAT, Navakanta.SPIE proceedings series. 2002, pp 699-702, isbn 0-8194-4500-2, 2VolConference Paper

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Bulk unipolar camel diodes formed using indium implantation into siliconSHANNON, J. M; GOLDSMITH, B. J.IEEE electron device letters. 1985, Vol 6, Num 11, pp 583-585, issn 0741-3106Article