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Results 1 to 25 of 1355

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Hydrogen accommodation in α-iron and nickelFULLARTON, M. L; VOSKOBOINIKOV, R. E; MIDDLEBURGH, S. C et al.Journal of alloys and compounds. 2014, Vol 587, pp 794-799, issn 0925-8388, 6 p.Article

Material Diffusion and Doping of Mn in Wurtzite ZnSe NanorodsACHARYA, Shinjita; SARKAR, Suresh; PRADHAN, Narayan et al.Journal of physical chemistry. C. 2013, Vol 117, Num 11, pp 6006-6012, issn 1932-7447, 7 p.Article

Microscopic distribution of metal dopants and anion vacancies in Fe-doped BaTiO3―δ single crystalsCHAKRABORTY, Tanushree; MENEGHINI, Carlo; AQUILANTI, Giuliana et al.Journal of physics. Condensed matter (Print). 2013, Vol 25, Num 23, issn 0953-8984, 236002.1-236002.7Article

Ab initio study of the interaction of H with substitutional solute atoms in α-Fe: Trends across the transition-metal seriesPSIACHOS, D; HAMMERSCHMIDT, T; DRAUTZ, R et al.Computational materials science. 2012, Vol 65, pp 235-238, issn 0927-0256, 4 p.Article

Helium induced void and bubble formation in MgORUNEVALL, Odd; SANDBERG, Nils.Computational materials science. 2012, Vol 60, pp 53-58, issn 0927-0256, 6 p.Article

Lattice location of nickel in diamond by RBS channelling and PIXEDRUMM, Virginia S; ALVES, Andrew D. C; ORWA, Julius O et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 1, pp 42-46, issn 1862-6300, 5 p.Article

Characterization of electrically active dopant profiles with the spreading resistance probeCLARYSSE, T; VANHAEREN, D; HOFLIJK, I et al.Materials science & engineering. R, Reports. 2004, Vol 47, Num 5-6, pp 123-206, issn 0927-796X, 84 p.Article

Practical methods to determine hydrogen and hydroxyl contents in quartz crystalsBOY, Jean-Jacques; YAMNI, K; PASQUALI, M. A et al.Annales de chimie (Paris. 1914). 2001, Vol 26, Num 1, pp 11-17, issn 0151-9107Article

Impurities identification in a synthetic diamond by transmission electron microscopyYIN, Long-Wei; ZOU, Zeng-Da; LI, Mu-Sen et al.Diamond and related materials. 2000, Vol 9, Num 12, pp 2006-2009, issn 0925-9635Article

Assessment of carbon concentrations in polycrystalline and monocrystalline gallium arsenide using SSMS, FTIR, and CPAAWIEDEMANN, B; ALT, H. C; BETHGE, K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 66, Num 1-3, pp 118-122, issn 0921-5107Conference Paper

Oxygen content in β-Si3N4 crystal latticeKITAYAMA, M; HIRAO, K; TSUGE, A et al.Journal of the American Ceramic Society. 1999, Vol 82, Num 11, pp 3263-3265, issn 0002-7820Article

Quantitative evaluation of precipitated oxygen in silicon by infrared spectroscopy : Still an open problemSASSELLA, A; BORGHESI, A; ABE, T et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 5, pp 1715-1719, issn 0013-4651Article

Tetragonal distortions of the octahedral environments of Cr3+, Fe3+ and Gd3+ ions in A2CdF4 (A = Rb, Cs) and ACdF3 crystalsZHENG WEN-CHEN.Radiation effects and defects in solids. 1998, Vol 145, Num 1-2, pp 169-178, issn 1042-0150Article

Hydrogen outgassing of synthetic quartz after annealing up to ∼ 1000°CBACHHEIMER, J. P.Annales de chimie (Paris. 1914). 1997, Vol 22, Num 8, pp 699-701, issn 0151-9107Conference Paper

Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafersGRÄF, D; LAMBERT, U; BROHL, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 50-54, issn 0921-5107Conference Paper

Effects of annealing in oxygen and nitrogen atmosphere on F.Z. silicon wafersGAY, N; FLORET, F; MARTINUZZI, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 125-128, issn 0921-5107Conference Paper

Non-doping light impurities in silicon for solar cellsPIVAC, B; SASSELLA, A; BORGHESI, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 55-62, issn 0921-5107Conference Paper

The nitrogen-pair oxygen defect in siliconBERG RASMUSSEN, F; ÖBERG, S; JONES, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 91-95, issn 0921-5107Conference Paper

A SIMS study of hydrogen in acceptor-doped perovskite oxidesDE SOUZA, R. A; KILNER, J. A; STEELE, B. C. H et al.Solid state ionics. 1995, Vol 77, pp 180-184, issn 0167-2738Conference Paper

Theoretical study of the coordination of the Cr3+ ion in α-Al2O3FRANCO, R; RECIO, J. M; MARTIN PENDAS, A et al.Radiation effects and defects in solids. 1995, Vol 134, Num 1-4, pp 123-126, issn 1042-0150Conference Paper

Accurate evaluation techniques of interstitial oxygen concentrations in medium-resistivity Si crystalsKITAGAWARA, Y; TAMATSUKA, M; TAKENAKA, T et al.Journal of the Electrochemical Society. 1994, Vol 141, Num 5, pp 1362-1364, issn 0013-4651Article

High-temperature Hf-site-interchange chemistry in LiNbO3 and LiTaO3BIRNIE, D. P; CATCHEN, G. L.Journal of materials research. 1993, Vol 8, Num 6, pp 1379-1386, issn 0884-2914Article

Impurity decoration of defects in float zone and polycrystalline silicon via chemomechanical polishingMCHUGO, S. A; SAWYER, W. D.Applied physics letters. 1993, Vol 62, Num 20, pp 2519-2521, issn 0003-6951Article

Ion beam analysis of ZnSeSASAKI, Y; YOSHIDA, K; NISHIYAMA, F et al.Japanese journal of applied physics. 1992, Vol 31, Num 4B, pp L449-L451, issn 0021-4922, 2Article

Lattice site location of Ti diffused and doped in LiNbO3KOLLEWE, D; KLING, A; GRABMAIER, B. C et al.Physics letters. A. 1992, Vol 169, Num 3, pp 177-180, issn 0375-9601Article

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