Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Impurity")

Filter

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 78071

  • Page / 3123

Export

Selection :

  • and

Localisation d'une impureté diffusant dans des structures de semiconducteursKAMILOV, B. S.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 9, pp 1704-1706, issn 0015-3222Article

Out-diffusion of silver from InPTUCK, B; CHAOUI, R.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 2, pp 379-385, issn 0022-3727Article

Study of impurity profiles in siliconERANNA, G; KAKATI, D.Journal of the Electrochemical Society. 1983, Vol 130, Num 12, pp 2502-2504, issn 0013-4651Article

On models of phosphorus diffusion in siliconHU, S. M; FAHEY, P; DUTTON, R. W et al.Journal of applied physics. 1983, Vol 54, Num 12, pp 6912-6922, issn 0021-8979Article

A MORE GENERALIZED ANALYSIS OF HYDROGEN TRAPPINGIINO M.1982; ACTA METALL.; ISSN 0001-6160; USA; DA. 1982; VOL. 30; NO 2; PP. 367-375; ABS. FRE/GER; BIBL. 12 REF.Article

ANALYSIS OF IRREVERSIBLE HYDROGEN TRAPPINGIINO M.1982; ACTA METALL.; ISSN 0001-6160; USA; DA. 1982; VOL. 30; NO 2; PP. 377-383; ABS. FRE/GER; BIBL. 9 REF.Article

The role of chlorine in the gettering of metallic impurities from siliconBAGINSKI, T. A; MONKOWSKI, J. R.Journal of the Electrochemical Society. 1985, Vol 132, Num 8, pp 2031-2033, issn 0013-4651Article

CLUSTER FORMATION AND DIFFUSION IN A METAL-HYDROGEN SYSTEMLEE MH.1983; JOURNAL OF THE LESS-COMMON METALS; ISSN 0022-5088; CHE; DA. 1983; VOL. 91; NO 2; PP. 321-326; BIBL. 34 REF.Article

Silicon gettering by segregationSACHELARIE, D; UNGUREANU, R; BADOIU, A et al.Revue roumaine des sciences techniques. Electrotechnique et énergétique. 1989, Vol 34, Num 1, pp 159-164, issn 0035-4066Article

Hydrogen motion in Pd3P0.8H0.2NOREUS, D; DAHLBORG, U; ANDERSSON, Y et al.Solid state communications. 1983, Vol 46, Num 7, pp 553-555, issn 0038-1098Article

Microcinétique de la diffusion à deux constituants dans les semiconducteursVOROB'EV, V. M; MURAV'EV, V. A; PANTELEEV, V. A et al.Fizika tverdogo tela. 1983, Vol 25, Num 10, pp 3132-3137, issn 0367-3294Article

Near-neighbor configuration and impurity-cluster size distribution in a Poisson ensemble of monovalent impurity atoms in semiconductorsEDGAL, U. F; WILEY, J. D.Physical review. B, Condensed matter. 1983, Vol 27, Num 8, pp 4997-5006, issn 0163-1829Article

Influence du champ électrique propre sur la diffusion d'éléments du groupe V dans le siliciumVASILEVSKIJ, M. I; PANTELEEV, V. A.Fizika tverdogo tela. 1984, Vol 26, Num 1, pp 60-64, issn 0367-3294Article

Clustering model in n-doped many-valley semiconductorsFABBRI, M; FERREIRA DA SILVA, A.Physical review. B, Condensed matter. 1984, Vol 29, Num 10, pp 5764-5773, issn 0163-1829Article

Iron and its complexes in siliconISTRATOV, A. A; HIESLMAIR, H; WEBER, E. R et al.Applied physics. A, Materials science & processing (Print). 1999, Vol 69, Num 1, pp 13-44, issn 0947-8396Article

Relationship between HPLC precision and number of significant figures when reporting impurities and when setting specificationsAGUT, Christophe; SEGALINI, Audrey; BAUER, Michel et al.Journal of pharmaceutical and biomedical analysis. 2006, Vol 41, Num 2, pp 442-448, issn 0731-7085, 7 p.Article

Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopyWILLIAMS, C. C; SLINKMAN, J; HOUGH, W. P et al.Applied physics letters. 1989, Vol 55, Num 16, pp 1662-1664, issn 0003-6951, 3 p.Article

Diffusion of chromium in silicon during a Sirtl etching process at room temperatureJUH-TZENG LUE; MEYER, O.Journal of applied physics. 1983, Vol 54, Num 2, pp 1148-1150, issn 0021-8979Article

Alternative mechanisms for the diffusion of Sn and Zn in GaAsSHAW, D.Physica status solidi. A. Applied research. 1984, Vol 86, Num 2, pp 629-635, issn 0031-8965Article

The solubility of argon in vitreous silicaFLORES, J. S; SHACKELFORD, J. F.Journal of non-crystalline solids. 1984, Vol 68, Num 2-3, pp 327-332, issn 0022-3093Article

Influence of radiation damage on diffusivity of tritium in graphiteSAEKI, M.The International journal of applied radiation and isotopes. 1983, Vol 34, Num 4, pp 739-742, issn 0020-708XArticle

Concentration effects in temperature quenching of impurity-center luminescenceYUROV, V. M; MURZAKHMETOV, M. K; KUKETAEV, T. A et al.Optika i spektroskopiâ. 1989, Vol 67, Num 6, pp 1398-1399, issn 0030-4034, 2 p.Article

Role of impurity influenced domain on excitation profile of doped quantum dot subject to oscillatory confinement potentialNIRMAL KUMAR DATTA; GHOSH, Manas.Journal of luminescence. 2011, Vol 131, Num 4, pp 795-800, issn 0022-2313, 6 p.Article

COMMENT ON "GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI". REPLY TO "COMMENT ON "GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI"SCHAAKE HF; MAGEE TJ; FURMAN BK et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1226-1228; BIBL. 11 REF.Article

An experimental overview of the effects of hydrogen impurities on polymer electrolyte membrane fuel cell performanceXIAOFENG WANG; BAKER, Phillip; XIAOYU ZHANG et al.International journal of hydrogen energy. 2014, Vol 39, Num 34, pp 19701-19713, issn 0360-3199, 13 p.Article

  • Page / 3123