Localisation d'une impureté diffusant dans des structures de semiconducteursKAMILOV, B. S.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 9, pp 1704-1706, issn 0015-3222Article

Out-diffusion of silver from InPTUCK, B; CHAOUI, R.Journal of physics. D, Applied physics (Print). 1984, Vol 17, Num 2, pp 379-385, issn 0022-3727Article

Study of impurity profiles in siliconERANNA, G; KAKATI, D.Journal of the Electrochemical Society. 1983, Vol 130, Num 12, pp 2502-2504, issn 0013-4651Article

On models of phosphorus diffusion in siliconHU, S. M; FAHEY, P; DUTTON, R. W et al.Journal of applied physics. 1983, Vol 54, Num 12, pp 6912-6922, issn 0021-8979Article

A MORE GENERALIZED ANALYSIS OF HYDROGEN TRAPPINGIINO M.1982; ACTA METALL.; ISSN 0001-6160; USA; DA. 1982; VOL. 30; NO 2; PP. 367-375; ABS. FRE/GER; BIBL. 12 REF.Article

ANALYSIS OF IRREVERSIBLE HYDROGEN TRAPPINGIINO M.1982; ACTA METALL.; ISSN 0001-6160; USA; DA. 1982; VOL. 30; NO 2; PP. 377-383; ABS. FRE/GER; BIBL. 9 REF.Article

The role of chlorine in the gettering of metallic impurities from siliconBAGINSKI, T. A; MONKOWSKI, J. R.Journal of the Electrochemical Society. 1985, Vol 132, Num 8, pp 2031-2033, issn 0013-4651Article

Silicon gettering by segregationSACHELARIE, D; UNGUREANU, R; BADOIU, A et al.Revue roumaine des sciences techniques. Electrotechnique et énergétique. 1989, Vol 34, Num 1, pp 159-164, issn 0035-4066Article

Near-neighbor configuration and impurity-cluster size distribution in a Poisson ensemble of monovalent impurity atoms in semiconductorsEDGAL, U. F; WILEY, J. D.Physical review. B, Condensed matter. 1983, Vol 27, Num 8, pp 4997-5006, issn 0163-1829Article

Influence du champ électrique propre sur la diffusion d'éléments du groupe V dans le siliciumVASILEVSKIJ, M. I; PANTELEEV, V. A.Fizika tverdogo tela. 1984, Vol 26, Num 1, pp 60-64, issn 0367-3294Article

Clustering model in n-doped many-valley semiconductorsFABBRI, M; FERREIRA DA SILVA, A.Physical review. B, Condensed matter. 1984, Vol 29, Num 10, pp 5764-5773, issn 0163-1829Article

Relationship between HPLC precision and number of significant figures when reporting impurities and when setting specificationsAGUT, Christophe; SEGALINI, Audrey; BAUER, Michel et al.Journal of pharmaceutical and biomedical analysis. 2006, Vol 41, Num 2, pp 442-448, issn 0731-7085, 7 p.Article

Concentration effects in temperature quenching of impurity-center luminescenceYUROV, V. M; MURZAKHMETOV, M. K; KUKETAEV, T. A et al.Optika i spektroskopiâ. 1989, Vol 67, Num 6, pp 1398-1399, issn 0030-4034, 2 p.Article

COMMENT ON "GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI". REPLY TO "COMMENT ON "GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI"SCHAAKE HF; MAGEE TJ; FURMAN BK et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1226-1228; BIBL. 11 REF.Article

An experimental overview of the effects of hydrogen impurities on polymer electrolyte membrane fuel cell performanceXIAOFENG WANG; BAKER, Phillip; XIAOYU ZHANG et al.International journal of hydrogen energy. 2014, Vol 39, Num 34, pp 19701-19713, issn 0360-3199, 13 p.Article

RECOMBINATION CENTERS IN ALUMINUM-DOPED SILICON DIFFUSED IN HIGH PHOSPHORUS CONCENTRATION.MARCHAND RL; STIVERS AR; SAH CT et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2576-2580; BIBL. 6 REF.Article

Electronic configuration of iron in diamondLOWTHER, J. E.Physics letters. A. 1984, Vol 104, Num 5, pp 273-276, issn 0375-9601Article

DETERMINATION OF THREE PARAMETERS OF A DEPTH PROFILE OF FOREIGN ATOMS IN BULK MATERIAL USING PIXE ANALYSIS. II: INFLUENCE OF THE ERRORS OF THEORETICAL QUANTITIES WHICH ARE USED IN THE EVALUATION PROCEDUREGERETSCHLAGER M.1982; NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH; ISSN 0167-5087; NLD; DA. 1982; VOL. 203; NO 1-3; PP. 503-508; BIBL. 28 REF.Article

ON THE EQUILIBRIUM DISTRIBUTION OF THE IMPURITY ATOMS IN REAL CRYSTALSJAGODZINSKI JN; KORNYUSHIN YV.1982; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1982; VOL. 17; NO 4; PP. 1036-1040; BIBL. 4 REF.Article

Effect of annealing method upon annealing characteristics of supersaturated substitutional gold in siliconMOROOKA, M; KITAGAWA, H; TOMOKAGE, H et al.Japanese journal of applied physics. 1984, Vol 23, Num 1, pp 124-125, issn 0021-4922Article

IMPLANT ION COLLECTION IN THE PRESENCE OF RATIATION ENHANCED DIFFUSION AND PREFERENTIAL SPUTTERING OF IMPLANTCARTER G; WEBB R; COLLINS R et al.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 43; NO 4-5; PP. 125-132; BIBL. 25 REF.Article

Modèle de diffusion pour l'implantation par reculBLINOV, YU. F; SERBA, P. V.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 10, pp 1848-1851, issn 0015-3222Article

The luminescence of Bi³⁺ and Mn²⁺ in lanthanum magnesium borate (LaMgB₅O₁₀)SAAKES, M; BLASSE, G.Physica status solidi. A. Applied research. 1983, Vol 78, Num 1, pp K97-K99, issn 0031-8965Article

Plasma stimulated impurity redistribution in siliconKOVESHNIKOV, S. V; YAKIMOV, E. B; YARYKIN, N. A et al.Physica status solidi. A. Applied research. 1989, Vol 111, Num 1, pp 81-88, issn 0031-8965, 8 p.Article

Effective gettering of gold in silicon at 900°C by low-current corona dischargeFALSTER, R. J; MODLIN, D. N; TILLER, W. A et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 554-558, issn 0021-8979Article