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Study of impurity profiles in siliconERANNA, G; KAKATI, D.Journal of the Electrochemical Society. 1983, Vol 130, Num 12, pp 2502-2504, issn 0013-4651Article

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On models of phosphorus diffusion in siliconHU, S. M; FAHEY, P; DUTTON, R. W et al.Journal of applied physics. 1983, Vol 54, Num 12, pp 6912-6922, issn 0021-8979Article

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DETERMINATION OF ABSOLUTE INTERNAL QUANTUM EFFICIENCIES OF PHOTOLUMINESCENCE IN GALLIUM ARSENIDE.METTLER K.1977; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1977; VOL. 6; NO 3; PP. 152-155; BIBL. 14 REF.Article

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