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Exact solution of continued fraction for tracer diffusion in solidsCHATURVEDI, D. K.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 18, pp L449-L452, issn 0022-3719Article

Tracer diffusion at the percolation thresholdTAHIR-KHELI, R. A.Physical review. B, Condensed matter. 1985, Vol 32, Num 6, pp 3604-3606, issn 0163-1829Article

Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in siliconTAN, T. Y; GINSBERG, B. J.Applied physics letters. 1983, Vol 42, Num 5, pp 448-450, issn 0003-6951Article

Application of the modified electrostatic model to diffusion of transition metals in noble metalsNEUMANN, G; TÖLLE, V; TUIJN, C et al.Physica. B, Condensed matter. 2005, Vol 363, Num 1-4, pp 7-18, issn 0921-4526, 12 p.Article

Moisture diffusion in polyimide films in integrated circuitsDENTON, D. D; DAY, D. R; PRIORE, D. F et al.Journal of electronic materials. 1985, Vol 14, Num 2, pp 119-136, issn 0361-5235Article

Diffusion de l'impureté de substitution dans un cristal irradié par des ionsKOZLOVSKIJ, V. V; LOMASOV, V. N; MARUSHCHAK, N. V et al.Žurnal tehničeskoj fiziki. 1985, Vol 55, Num 11, pp 2175-2178, issn 0044-4642Article

Profils de diffusion d'impuretés près de la surface dans les semiconducteurs. III. Comparaison à l'expérienceFISTUL, V. I; SINDER, M. I.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 5, pp 797-801, issn 0015-3222Article

Diffusion anormalement accélérée de phosphore à partir d'une couche de silicium implantée d'ions sous pressionVASIN, A. S; OKULICH, V. I; PANTELEEV, V. A et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 3, pp 483-487, issn 0015-3222Article

Diffusion and electrical properties of silicon-doped gallium arsenideGREINER, M. E; GIBBONS, J. F.Journal of applied physics. 1985, Vol 57, Num 12, pp 5181-5187, issn 0021-8979Article

Diffusion d'antimoine stimulée par les protons dans le siliciumKOZLOVSKIJ, V. V; LOMASOV, V. N; GUR'YANOV, G. M et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 5, pp 958-960, issn 0015-3222Article

A model for atomic mixing and preferential sputtering effects in SIMS depth profilingKING, B. V; TSONG, I. S. T.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1984, Vol 2, Num 4, pp 1443-1447, issn 0734-2101Article

Analytic fixed points of discrete equations of motion: universality in homogeneous diffusive systemsVISSCHER, P. B.Physical review. B, Condensed matter. 1984, Vol 29, Num 10, pp 5462-5471, issn 0163-1829Article

Effects of a source term on forced boundary diffusionZEE, R. H; LEE-WHITING, G. E.Journal of applied physics. 1985, Vol 57, Num 6, pp 1849-1854, issn 0021-8979Article

Analysis of polycrystalline silicon diffusion sources by secondary ion mass spectrometrySCHABER, H; CRIEGERN, R. V; WEITZEL, I et al.Journal of applied physics. 1985, Vol 58, Num 11, pp 4036-4042, issn 0021-8979Article

Diffusion in concentrated lattice gases. III: Tracer diffusion on a one-dimensional latticeVAN BEIJEREN, H; KEHR, K. W; KUTNER, R et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 10, pp 5711-5723, issn 0163-1829Article

Localisation d'une impureté diffusant dans des structures de semiconducteursKAMILOV, B. S.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 9, pp 1704-1706, issn 0015-3222Article

A study of silicon interstitial kinetics using silicon membranes: applications to 2D dopant diffusionAHN, S. T; GRIFFIN, P. B; SHOTT, J. D et al.Journal of applied physics. 1987, Vol 62, Num 12, pp 4745-4755, issn 0021-8979Article

Diffusion d'impuretés en faible concentration dans les liquides semi-quantiquesBUISHVILI, L. L; TUGUSHI, A. I.ZETF. Pis′ma v redakciû. 1986, Vol 91, Num 6, pp 2097-2100, issn 0044-4510Article

Asymptotic estimates of diffusion times for rapid thermal annealingFEHRIBACH, J. D; GHEZ, R; OEHRLEIN, G. S et al.Applied physics letters. 1985, Vol 46, Num 4, pp 433-435, issn 0003-6951Article

Diffusion of boron implanted into siliconSTELMAKH, V. F; SUPRUN-BELEVICH, YU. R; TKACHEV, V. D et al.Physica status solidi. A. Applied research. 1985, Vol 89, Num 1, pp K45-K49, issn 0031-8965Article

Interstitial hydrogen in crystalline germaniumKHOO, G. S; ONG, C. K.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 10, pp 1385-1392, issn 0022-3719Article

Influence de la surface Al-Ga-As des hétérostructures sur la diffusion du zinc à partir de la phase gazeuseANDREEV, V. M; PITTROFF, V; SULIMA, O. V et al.Žurnal tehničeskoj fiziki. 1985, Vol 55, Num 9, pp 1844-1846, issn 0044-4642Article

Modèle de diffusion pour l'implantation par reculBLINOV, YU. F; SERBA, P. V.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 10, pp 1848-1851, issn 0015-3222Article

Universality in disordered diffusive systems: exact fixed points in one, two, and three dimensionsVISSCHER, P. B.Physical review. B, Condensed matter. 1984, Vol 29, Num 10, pp 5472-5485, issn 0163-1829Article