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Results 1 to 25 of 3995

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Control of impurity diffusion in silicon by IR laser excitationSHIRAI, K; MATSUKAWA, K; MORIWAKI, T et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4685-4688, issn 0921-4526, 4 p.Conference Paper

Exact solution of continued fraction for tracer diffusion in solidsCHATURVEDI, D. K.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 18, pp L449-L452, issn 0022-3719Article

Tracer diffusion at the percolation thresholdTAHIR-KHELI, R. A.Physical review. B, Condensed matter. 1985, Vol 32, Num 6, pp 3604-3606, issn 0163-1829Article

Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in siliconTAN, T. Y; GINSBERG, B. J.Applied physics letters. 1983, Vol 42, Num 5, pp 448-450, issn 0003-6951Article

Application of the modified electrostatic model to diffusion of transition metals in noble metalsNEUMANN, G; TÖLLE, V; TUIJN, C et al.Physica. B, Condensed matter. 2005, Vol 363, Num 1-4, pp 7-18, issn 0921-4526, 12 p.Article

Moisture diffusion in polyimide films in integrated circuitsDENTON, D. D; DAY, D. R; PRIORE, D. F et al.Journal of electronic materials. 1985, Vol 14, Num 2, pp 119-136, issn 0361-5235Article

Diffusion de l'impureté de substitution dans un cristal irradié par des ionsKOZLOVSKIJ, V. V; LOMASOV, V. N; MARUSHCHAK, N. V et al.Žurnal tehničeskoj fiziki. 1985, Vol 55, Num 11, pp 2175-2178, issn 0044-4642Article

Profils de diffusion d'impuretés près de la surface dans les semiconducteurs. III. Comparaison à l'expérienceFISTUL, V. I; SINDER, M. I.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 5, pp 797-801, issn 0015-3222Article

Diffusion anormalement accélérée de phosphore à partir d'une couche de silicium implantée d'ions sous pressionVASIN, A. S; OKULICH, V. I; PANTELEEV, V. A et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 3, pp 483-487, issn 0015-3222Article

Diffusion and electrical properties of silicon-doped gallium arsenideGREINER, M. E; GIBBONS, J. F.Journal of applied physics. 1985, Vol 57, Num 12, pp 5181-5187, issn 0021-8979Article

Diffusion d'antimoine stimulée par les protons dans le siliciumKOZLOVSKIJ, V. V; LOMASOV, V. N; GUR'YANOV, G. M et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 5, pp 958-960, issn 0015-3222Article

A model for atomic mixing and preferential sputtering effects in SIMS depth profilingKING, B. V; TSONG, I. S. T.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1984, Vol 2, Num 4, pp 1443-1447, issn 0734-2101Article

Analytic fixed points of discrete equations of motion: universality in homogeneous diffusive systemsVISSCHER, P. B.Physical review. B, Condensed matter. 1984, Vol 29, Num 10, pp 5462-5471, issn 0163-1829Article

Redistribution par diffusion du manganèse dans GaAsSKORYATINA, E. A; MALKOVICH, R. SH.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 1, pp 164-166, issn 0015-3222Article

Théorie des profils d'impureté de diffusion avec des coefficients de diffusion dépendant de la concentrationSINDER, M. I.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 2, pp 373-375, issn 0015-3222Article

Diffusion without vacancies or interstitials: a new concerted exchange mechanismPANDEY, K. C.Physical review letters. 1986, Vol 57, Num 18, pp 2287-2290, issn 0031-9007Article

Etude d'une nouvelle technique de diffusion dans les semi-conducteurs III-V et application à la réalisation de composants optoélectroniques = Development of new technology for diffusion in III. V semiconductors; application to optoelectronic devices realizationLAUNAY, François.1984, 162 pThesis

Diffusion of chromium in silicon during a Sirtl etching process at room temperatureJUH-TZENG LUE; MEYER, O.Journal of applied physics. 1983, Vol 54, Num 2, pp 1148-1150, issn 0021-8979Article

Grain boundary inhomogeneity and grain boundary heterodiffusionBOKSTEIN, B. S; OSTROVSKY, A. S; RODIN, A. O et al.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 1995, Vol 72, Num 4, pp 829-836, issn 1364-2804Article

Diffusion dans les conditions de recuit par laser des semi-conducteursSTREKALOV, V. N.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 2, pp 361-363, issn 0015-3222Article

Quantum theory of interstitial diffusion in crystalsPRAKASH, S; MAHANTY, J.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 35, pp 6951-6961, issn 0022-3719Article

Mobility and diffusivity for vacancy-solute diffusion in a simple cubic edge dislocationSTARK, J. P.Journal of applied physics. 1985, Vol 58, Num 9, pp 3430-3433, issn 0021-8979Article

Alternative mechanisms for the diffusion of Sn and Zn in GaAsSHAW, D.Physica status solidi. A. Applied research. 1984, Vol 86, Num 2, pp 629-635, issn 0031-8965Article

Redistribution d'une impureté chargée dans un semi-conducteur dans les conditions d'une diffusion stimulée par protonsKOZLOVSKIJ, V. V; LOMASOV, V. N.Žurnal tehničeskoj fiziki. 1984, Vol 54, Num 6, pp 1157-1162, issn 0044-4642Article

Influence of radiation damage on diffusivity of tritium in graphiteSAEKI, M.The International journal of applied radiation and isotopes. 1983, Vol 34, Num 4, pp 739-742, issn 0020-708XArticle

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