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Electroabsorption de la lumière par les centres d'impureté profonds dans les semiconducteurs avec bande de valence à structure complexeMERKULOV, I. A; PAKHOMOV, A. A; YASSIEVICH, I. N et al.Fizika tverdogo tela. 1986, Vol 28, Num 7, pp 2127-2134, issn 0367-3294Article

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CALCULATION OF THE BROADENING OF DONOR-ACCEPTOR PAIR LINES DUE TO THE POTENTIALS OF IONIZED IMPURITIESBREITENSTEIN O; UNGER K.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 91; NO 2; PP. 557-562; ABS. GER; BIBL. 8 REF.Article

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Impurity profiles and radial transport in the EXTRAP-T2 reversed field pinchSALLANDER, J.Plasma physics and controlled fusion. 1999, Vol 41, Num 5, pp 679-691, issn 0741-3335Article

Room-temperature electroluminescence of Er-doped hydrogenated amorphous siliconGUSEV, O; BRESLER, M; KUZNETSOV, A et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 1164-1167, issn 0022-3093, bConference Paper

Electronic excitations of pure and doped rare-gas fluids: theory and experimentSTEINBERGER, I. T; BAER, S.Physical review. B, Condensed matter. 1987, Vol 36, Num 2, pp 1358-1360, issn 0163-1829Article

Green's-function-quantum-defect treatment of impurity photoionization in semiconductorsCOON, D. D; KARUNASIRI, R. P. G.Physical review. B, Condensed matter. 1986, Vol 33, Num 12, pp 8228-8233, issn 0163-1829, 1Article

Photoconductivité à spectre de raies excitée par les rayonnements monochromatique et de fondKOGAN, SH. M.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 4, pp 775-777, issn 0015-3222Article