Electronic structure of Ge in SiO₂HAGON, J. P; JAROS, M; STONEHAM, A. M et al.Journal of physics. C. Solid state physics. 1985, Vol 18, Num 25, pp 4957-4962, issn 0022-3719Article

Hydrogenic impurity states in a quantum well wireLEE, J; SPECTOR, H. N.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1984, Vol 2, Num 1, pp 16-20, issn 0734-2101Article

Deep levels associated with impurities at the bond-centered interstitial site in SiJOHNSON, W. L; SANKEY, O. F; DOW, J. D et al.Physical review. B, Condensed matter. 1984, Vol 30, Num 4, pp 2070-2073, issn 0163-1829Article

Field tunneling from impurities in case of anisotropic effective massesDARGYS, A; MATULIS, A.Physica status solidi. B. Basic research. 1984, Vol 125, Num 1, pp K71-K73, issn 0370-1972Article

Ground state properties of the two impurity anderson model in a 1/N expansionRASUL, J. W; HEWSON, A. C.Solid state communications. 1984, Vol 52, Num 2, pp 217-220, issn 0038-1098Article

Comment on: on shallow-deep instability of impurity level in semiconductorsCHAUDHURI, S; COON, D. D.Solid state communications. 1985, Vol 55, Num 12, issn 0038-1098, 1113Article

The splitting of impurity d-states in zincblende crystalsBIERNACKI, S. W.Physica status solidi. B. Basic research. 1985, Vol 130, Num 1, pp K59-K63, issn 0370-1972Article

Deep-level impurities: a possible guide to prediction of band edge discontinuities in semiconductor heterojunctionsLANGER, T. M; HEINRICH, H.Physical review letters. 1985, Vol 55, Num 13, pp 1414-1417, issn 0031-9007Article

Influence de la polarisation des centres d'impureté sur la mobilité des porteurs dans des structures bidimensionnellesZON, B. A; KUPERSHMIDT, V. YA; SYSOEV, B. I et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 1, pp 140-142, issn 0015-3222Article

Microscopic models of Hg⁺, Au° and Pt^- isoelectronic interstitial impurities in siliconALVES, J. L. A; LEITE, J. R; GOMES, V. M. S et al.Solid state communications. 1985, Vol 55, Num 4, pp 333-337, issn 0038-1098Article

Contribution à l'étude théorique des métaux de transition dans le silicium = Theoretical study of transition metals in siliconMDAA, Abdesselam.1985, 114 fThesis

Sur les niveaux d'énergie de Se dans GeOSIP'YAN, YU. A; PROKOPENKO, V. M; TAL'YANSKIJ, V. I et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1984, Vol 39, Num 3, pp 126-129, issn 0370-274XArticle

The energies of neutral donors in a weakly compensated classical impurity bandBUTCHER, P. N; COX, I. D; MCINNES, J. A et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 21, pp 3745-3752, issn 0022-3719Article

Solution analytique du problème d'un centre profond par la méthode des fractions continuesVASIL'EV, A. EH; IL'IN, N. P; MASTEROV, V. F et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 10, pp 1823-1829, issn 0015-3222Article

DEEP LEVEL, QUENCHED-IN DEFECTS IN SILICON DOPED WITH GOLD, SILVER, IRON, COPPER OR NICKELTAVENDALE AJ; PEARTON SJ.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 9; PP. 1665-1673; BIBL. 2 P.Article

DEFECT LEVELS IN CHROMIUM-DOPED SILICONKUNIO T JR; YAMAZAKI T; OHTA E et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 2; PP. 155-160; BIBL. 16 REF.Article

ON THE DETERMINATION OF THE SPATIAL DISTRIBUTION OF DEEP CENTERS IN SEMICONDUCTING THIN FILMS FROM CAPACITANCE TRANSIENT SPECTROSCOPYZOHTA Y; WATANABE MO.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1809-1811; BIBL. 12 REF.Article

RIGOROUS FORMULATION OF HIGH-FIELD QUANTUM TRANSPORT APPLIED TO THE CASE OF ELECTRONS SCATTERED BY DILUTE RESONANT IMPURITIESJAUHO AP; WILKINS JW.1982; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1982; VOL. 49; NO 10; PP. 762-765; BIBL. 17 REF.Article

TWO-POINT CORRELATION FUNCTION OF THE 2D ISING MODEL WITH IMPURITY LATTICE BONDSDOTSENKO VS; DOTSENKO VS.DOTSENKO VS; DOTSENKO VS.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 17; PP. L557-L563; BIBL. 14 REF.Article

CALCUL SEMI-EMPIRIQUE DE L'ENERGIE D'IONISATION OPTIQUE DU CENTRE TL⁰ DANS LE CRISTAL DE KCLERMOSHKIN AN; KOTOMIN EA; EHVARESTOV RA et al.1982; OPTIKA I SPEKTROSKOPIJA; ISSN 0030-4034; SUN; DA. 1982; VOL. 53; NO 1; PP. 186-189; BIBL. 12 REF.Article

HYDROGEN PASSIVATION OF DEEP DONOR CENTRES IN HIGH-PURITY EPITAXIAL GAASPEARTON SJ; TAVENDALE AJ.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 715-716; BIBL. 8 REF.Article

DEEP LEVELS STUDIES OF N-FREE AND N-DOPED GAP GROWN BY TDM-CVPNISHIZAWA JI; KOIKE M; MIURA K et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 1; PP. 25-30; BIBL. 23 REF.Article

DEEP SULFUR-RELATED CENTERS IN SILICONGRIMMEISS HG; JANZEN E; SKARSTAM B et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4212-4217; BIBL. 29 REF.Article

D-LEVELS IN CD_1-XMN_XSEICHIGUCHI T; DREW HD; FURDYNA JK et al.1983; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1983; VOL. 50; NO 8; PP. 612-615; BIBL. 9 REF.Article

THE ELECTRONIC STRUCTURE OF A HYDROGEN IMPURITY IN ALUMINIUM. III: THE ENERGY AND THE METAL-IMPURITY INTERACTIONCRAIG BI.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 115; NO 1; PP. 53-61; ABS. GER; BIBL. 15 REF.Article