Effective gettering of gold in silicon at 900°C by low-current corona dischargeFALSTER, R. J; MODLIN, D. N; TILLER, W. A et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 554-558, issn 0021-8979Article

The role of lateral interaction and site competition in the kinetics of impurity segregation at grain and interphase boundariesFELDMAN, E; STRELTSOV, V; MELNIK, T et al.Physica status solidi. A. Applied research. 1999, Vol 176, Num 2, pp 911-918, issn 0031-8965Article

Thermodynamic analysis of the segregation of multicomponent steelsLI LIN; DELAEY, L; WOLLANTS, P et al.Journal de chimie physique. 1993, Vol 90, Num 2, pp 305-311, issn 0021-7689Conference Paper

Study of solute segregation at interfaces using Auger electron spectroscopyWHITE, C. L.American Ceramic Society bulletin. 1985, Vol 64, Num 12, pp 1571-1580, issn 0002-7812Article

Solute segregation to ferrite grain boundaries in nodular cast iron : experiment and predictionLEJCEK, Pavel; KONECNA, Radomila; JANOVEC, Jozef et al.Surface and interface analysis. 2008, Vol 40, Num 3-4, pp 503-506, issn 0142-2421, 4 p.Conference Paper

Segregation phenomena in large-size cast multicrystalline Si ingotsMARTINUZZI, S; PERICHAUD, I; PALAIS, O et al.Solar energy materials and solar cells. 2007, Vol 91, Num 13, pp 1172-1175, issn 0927-0248, 4 p.Article

Stress development and impurity segregation during oxidation of the Si(100) surfaceCOLE, Daniel J; PAYNE, Mike C; COLOMBI CIACCHI, Lucio et al.Surface science. 2007, Vol 601, Num 21, pp 4888-4898, issn 0039-6028, 11 p.Article

Silicon gettering by segregationSACHELARIE, D; UNGUREANU, R; BADOIU, A et al.Revue roumaine des sciences techniques. Electrotechnique et énergétique. 1989, Vol 34, Num 1, pp 159-164, issn 0035-4066Article

Varistor-capacitor characteristics of ZnO ceramicsMANTAS, P. Q; SENOS, A. M. R; BAPTISTA, J. L et al.Journal of materials science. 1986, Vol 21, Num 2, pp 679-686, issn 0022-2461Article

An approximate method for determining the segregation coefficient of the boron drive diffusion in oxidizing ambientsDAO KHAC AN.Physica status solidi. A. Applied research. 1984, Vol 82, Num 2, pp K145-K148, issn 0031-8965Article

Redistribution of impurities during thermal oxidation of polycrystalline siliconSUZUKI, K; KATAOKA, Y.Journal of the Electrochemical Society. 1991, Vol 138, Num 6, pp 1794-1798, issn 0013-4651Article

Interpretation of the anomalies of transition impurity diffusion in aluminium = Interprétation des anomalies de la diffusion d'impureté de transition dans l'aluminiumNECHAEV, YU. S; YEWONDWOSSEN, M. H.Journal of physics. F. Metal physics. 1987, Vol 17, Num 5, pp 1081-1092, issn 0305-4608Article

About new criteria of component activities at the interface between two condensed phasesCHEBZOUKHOV, A. A; LEFKAIER, I. K; KARMOKOV, A. M et al.Surface science. 2000, Vol 445, Num 1, pp 65-70, issn 0039-6028Article

Effect of arsenic segregation on the electrical properties of grain boundaries in polycrystalline siliconWONG, C. Y; GROVENOR, C. R. M; BATSON, P. E et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 438-442, issn 0021-8979Article

GRAIN BOUNDARY SEGREGATION IN NI AND BINARY NI ALLOYS DOPED WITH SULFURMULFORD RA.1983; METALLURGICAL TRANSACTIONS A: PHYSICAL METALLURGY AND MATERIALS SCIENCE; ISSN 0360-2133; USA; DA. 1983; VOL. 14; NO 5; PP. 865-870; BIBL. 14 REF.Article

Effects of impurities on an Al grain boundaryLU, Guang-Hong; SUZUKI, Akira; ITO, Akira et al.Materials transactions - JIM. 2003, Vol 44, Num 3, pp 337-343, issn 0916-1821, 7 p.Article

OXYDATION DU SILICIUM: DIFFUSION ACCELEREE DU BORE ET SEGREGATION A L'INTERFACE SI-SIO₂ = SILICON OXIDATION: ENHANCED DIFFUSION OF BORON AND SEGREGATION AT THE INTERFACE SI-SIO₂CHARITAT GEORGES.1982; ; FRA; DA. 1982; 166 P.; 30 CM; ABS. ENG; BIBL. 67 REF.; TH. DOCT.-ING.: PHYS. MATER./INST. NATL. SCI. APPL. LYON/1982/IDI 1 8203Thesis

AN ELECTRON MICROSCOPY STUDY OF ARSENIC SEGREGATION IN SILICON.KOMEM Y.1977; ACTA METALLURG.; E.U.; DA. 1977; VOL. 25; NO 7; PP. 809-814; ABS. FR. ALLEM.; BIBL. 9 REF.Article

AN ANOMALOUS EFFECT IN ANGLE LAPPING AND STAINING ION-IMPLANTED LAYERSPICCO P; POLIGNANO ML.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 9; PP. 2034-2036; BIBL. 7 REF.Article

ANALYSIS OF MICROSEGREGATION IN CRYSTALSWILSON LO.1980; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1980; VOL. 48; NO 3; PP. 363-366; BIBL. 9 REF.Article

A PROCESS SIMULATION MODEL FOR MULTILAYER STRUCTURES INVOLVING POLYCRYSTALLINE SILICONLEN MEI; DUTTON RW.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1726-1734; BIBL. 27 REF.Article

ON THE UPPER LIMIT TO EQUILIBRIUM SEGREGATION AT A GRAIN BOUNDARY.WHITE CL; STEIN DF.1977; SCRIPTA METALLURG.; E.U.; DA. 1977; VOL. 11; NO 7; PP. 613-616; BIBL. 3 REF.Article

Analysis of experimental data for metallic impurity out-diffusion from deep-UV photoresistYANG, Tian-Shiang; HSU, Nien-Tzong; CHEN, Kuo-Shen et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 2, pp G149-G154, issn 0013-4651Article

Purification of tellurium to 6N+ by quadruple zone refiningMUNIRATHNAM, N. R; PRASAD, D. S; SUDHEER, Ch et al.Journal of crystal growth. 2003, Vol 254, Num 1-2, pp 262-266, issn 0022-0248, 5 p.Article

Atomic control of TiO₂(110) surface by oxygen plasma treatmentGAN, S; LIANG, Y; BAER, D. R et al.Surface science. 2000, Vol 459, Num 3, pp L498-L502, issn 0039-6028Article