The effect of dispersion of the refractive index on the performance of mid-infrared quantum cascade lasersLI, A. Z; CHEN, J. X; YANG, Q. K et al.Journal of crystal growth. 2001, Vol 227-28, pp 313-318, issn 0022-0248Conference Paper

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The influence of a continuum background on photoluminescence of self-assembled InAlAs/AlGaAs quantum dotsSELLAMI, N; MELLITI, A; OTHMEN, R et al.Journal of luminescence. 2011, Vol 131, Num 8, pp 1641-1644, issn 0022-2313, 4 p.Article

SIMS depth profiling of InGaAsN/InAlAs quantum wells on InPMAIER, M; SERRIES, D; GEPPERT, T et al.Applied surface science. 2003, Vol 203-04, pp 486-489, issn 0169-4332, 4 p.Conference Paper

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Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum wellGAO, K. H; LIN, T; WEI, L. M et al.Solid state communications. 2012, Vol 152, Num 12, pp 1042-1046, issn 0038-1098, 5 p.Article

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Improving the characteristics of an InAlAs/InGaAs inverted HEMT by inserting and InAs layer into the InGaAs channelAKAZAKI, T; ENOKI, T; ARAI, K et al.Solid-state electronics. 1995, Vol 38, Num 5, pp 997-1000, issn 0038-1101Article

Excess avalanche noise in In_0.52Al_0.48AsGOH, Y. L; MARSHALL, A. R. J; MASSEY, D. J et al.IEEE journal of quantum electronics. 2007, Vol 43, Num 5-6, pp 503-507, issn 0018-9197, 5 p.Article

Anodic oxidation of InAlAsSULEIMAN, A; LIU, Y; NOAKES, T. C. Q et al.Corrosion science. 2006, Vol 48, Num 1, pp 126-136, issn 0010-938X, 11 p.Article

Ordering structure along the [001] direction of InA1AsKURIHARA, K; NAMITA, H; UEDA, R et al.Journal of crystal growth. 2004, Vol 272, Num 1-4, pp 9-14, issn 0022-0248, 6 p.Conference Paper

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Analysis and design of waveguide structures for InGaAs/InAlAs quantum cascade lasers at λ ∼ 4.6―9.5 μmYEONG HWAN KO; JAE SU YU.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 12, pp 2900-2906, issn 1862-6300, 7 p.Article

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Current transport of GaAsSb-based DHBTs with different emitter structuresPAN, Chun-Ting; WANG, Che-Ming; HSIN, Yue-Ming et al.Solid-state electronics. 2009, Vol 53, Num 6, pp 574-577, issn 0038-1101, 4 p.Article

Passivation of Interfacial States for GaAs- and InGaAs/InP-Based Regrown NanostructuresRATHI, M. K; TSVID, G; KHANDEKAR, A. A et al.Journal of electronic materials. 2009, Vol 38, Num 10, pp 2023-2032, issn 0361-5235, 10 p.Article

Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxideOKTYABRSKY, S; TOKRANOV, V; KOVESHNIKOV, S et al.Journal of crystal growth. 2009, Vol 311, Num 7, pp 1950-1953, issn 0022-0248, 4 p.Conference Paper

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