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Results 1 to 25 of 3132

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1100 nm InGaAs/(Al)GaAs quantum dot lasers for high-power applicationsPAVELESCU, E.-M; GILFERT, C; WEINMANN, P et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 14, issn 0022-3727, 145104.1-145104.4Article

Electrical properties of InAs/InGaAs quantum-dot laser heterostructures: A threshold effectELISEEV, P. G; UKHANOV, A; STINTZ, A et al.Quantum electronics (Woodbury). 2009, Vol 39, Num 6, pp 501-504, issn 1063-7818, 4 p.Article

Singlemode InAs/InP quantum dash distributed feedback lasers emitting in 1.9 μm rangeHEIN, S; SOMERS, A; KAISER, W et al.Electronics Letters. 2008, Vol 44, Num 8, pp 527-528, issn 0013-5194, 2 p.Article

A two-stack, multi-color quantum well infrared photodetector for mid- and long-wavelength infrared detectionLI, Sheng S; KIM, Seung-Hwan; MOON, Jun-Hee et al.Infrared physics & technology. 2003, Vol 44, Num 4, pp 235-241, issn 1350-4495, 7 p.Article

Effects of Zn Doped Mesa Sidewall on Gain Enhanced InGaAs/InP Heterobipolar PhototransistorOGURA, Mutsuo; SUNG WOO CHOI; FURUE, Shigenori et al.IEEE journal of quantum electronics. 2010, Vol 46, Num 1-2, pp 214-219, issn 0018-9197, 6 p.Article

A prototype for high resolution infrared reflectography of paintingsCONSOLANDI, L; BERTANI, D.Infrared physics & technology. 2007, Vol 49, Num 3, pp 239-242, issn 1350-4495, 4 p.Conference Paper

Photodiode P.I.N. InGaAs en grands signaux hyperfréquence : modélisation, réalisation et caractérisationDentan, Martin; Castagne.1989, 217 p.Thesis

Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold currentGORDEEV, N. Yu; NOVIKOV, I. I; SHCHUKIN, V. A et al.Semiconductor science and technology. 2010, Vol 25, Num 4, issn 0268-1242, 045003.1-045003.4Article

The effect of dispersion of the refractive index on the performance of mid-infrared quantum cascade lasersLI, A. Z; CHEN, J. X; YANG, Q. K et al.Journal of crystal growth. 2001, Vol 227-28, pp 313-318, issn 0022-0248Conference Paper

Photoluminescence and Raman characterization from Er-implanted InxGa1-XAs bulk crystalARAI, Tomoyuki; UEKUSA, Shin-Ichiro.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 689015.1-689015.8, issn 0277-786X, isbn 978-0-8194-7065-2, 1VolConference Paper

Quantum dot lasers using high-Q microdisk cavitiesMICHLER, P; KIRAZ, A; BECHER, C et al.Physica status solidi. B. Basic research. 2001, Vol 224, Num 3, pp 797-801, issn 0370-1972Conference Paper

Photoluminescence peculiarities in InGaAs/GaAs structures with different InAs quantum dot densitiesTORCHYNSKA, T. V.Journal of luminescence. 2013, Vol 136, pp 75-79, issn 0022-2313, 5 p.Article

Gain and linewidth enhancement factor in InAs-quantum-dot and InAs-quantum-dash laser heterostructuresELISEEV, P. G; UKHANOV, A. A; STINTZ, A et al.SPIE proceedings series. 2003, pp 350-352, isbn 0-8194-4824-9, 3 p.Conference Paper

Analysis of pn-junction degeneration in heating process for extended wavelength InGaAs detectorsZHU, Yao-Ming; DENG, Hong-Hai; WEI PENG et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8193, issn 0277-786X, isbn 978-0-8194-8834-3, 81933D.1-81933D.8, 2Conference Paper

SWIR Air Glow Mapping of the Night SkyMYERS, Michael M; DAYTON, David C; GONGLEWSKI, John D et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7816, issn 0277-786X, isbn 978-0-8194-8312-6, 1Vol, 78160J.1-78160J.7Conference Paper

A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gainMAXIMOV, M. V; USTINOV, V. M; MIKHRIN, S et al.Semiconductor science and technology. 2008, Vol 23, Num 10, issn 0268-1242, 105004.1-105004.4Article

Highly unidirectional Y-junction S-section ring lasersWITHERS, Nathan J; QASSIM, Omar K; SMOLYAKOV, Gennady A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 688916.1-688916.7, issn 0277-786X, isbn 978-0-8194-7064-5Conference Paper

Multilayer InAs/InGaAs quantum dot structure grown by MOVPE for optoelectronic device applicationsQIN WANG; HÖGLUND, Linda; ALMQVIST, Susanne et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63270L.1-63270L.8, issn 0277-786X, isbn 0-8194-6406-6, 1VolConference Paper

Quantum dot photonic crystal detectorsPOSANI, Kalyan Teja; TRIPATHI, Vaibhav; ANNAMALAI, Senthil et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 612906.1-612906.8, issn 0277-786X, isbn 0-8194-6171-7, 1VolConference Paper

Broadband absorption bleaching in chirped InGaAs quantum dot semiconductor optical amplifier operating at 1211―1285 nmJELMAKAS, E; TOMASIUNAS, R; VENGRIS, M et al.Optical materials (Amsterdam). 2013, Vol 35, Num 12, pp 2171-2174, issn 0925-3467, 4 p.Article

The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage MeasurementsHUAPU PAN; BELING, Andreas; HAO CHEN et al.IEEE journal of quantum electronics. 2009, Vol 45, Num 3-4, pp 265-269, issn 0018-9197, 5 p.Article

Thermal characteristics and analysis of quantum cascade lasers for biochemical sensing applicationsJAE SU YU; HEE KWAN LEE; SLIVKEN, Steven et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7397, issn 0277-786X, isbn 978-0-8194-7687-6 0-8194-7687-0, 1Vol, 739705.1-739705.8Conference Paper

Quantum wells to quantum dots : 640x512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane arrayGUNAPALA, S. D; BANDARA, S. V; CHANGE, Y.-C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 629501.1-629501.8, issn 0277-786X, isbn 0-8194-6374-4Conference Paper

1.32-μm InAs/InGaAs/GaAs quantum-dot lasers operating at room temperature with low-threshold current densitySALHI, Abdelmajid; TASCO, Vittorianna; MARTIRADONNA, Luigi et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 618419.1-618419.8, issn 0277-786X, isbn 0-8194-6240-3, 1VolConference Paper

Two-color infrared focal plane array based on InAs/InGaAs/GaAs quantum dots in a well detectors designANNAMALAI, Senthil; DOWD, Philip; KRISHNA, Sanjay et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 58970P.1-58970P.4, issn 0277-786X, isbn 0-8194-5902-X, 1VolConference Paper

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