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InGaAs/InGaAsP microdisk lasers grown by GSMBEGENZHU WU; WANG, X. H; ZHENG, Q et al.Journal of crystal growth. 2001, Vol 227-28, pp 343-345, issn 0022-0248Conference Paper

Polarisation-sensitive switch: An integrated intensity-independent solution for 1.3 μm based on the polarisation anisotropy of ordered InGaAsPKRÄMER, S; NEUMANN, S; PROST, W et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 6, pp 992-996, issn 0031-8965, 5 p.Conference Paper

A monolithically integrated intensity-independent polarization-sensitive switch operating at 1.3 μm based on ordering in InGaAsPKRÄMER, Stefan; NEUMANN, S; PROST, W et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 554-557, issn 1386-9477, 4 p.Conference Paper

A unified approach to study the thermal dynamics in multilongitudinal mode semiconductor lasersGANESH MADHAN, M; VAYA, P. R; GUNASEKARAN, N et al.Fiber and integrated optics. 2001, Vol 20, Num 2, pp 159-170, issn 0146-8030Article

An in-depth analysis of reflections in MMI couplers using optical low-coherence reflectometry: design optimization and performance evaluationGOTTESMAN, Y; RAO, E. V. K; PIOT, D et al.Applied physics. B, Lasers and optics (Print). 2001, Vol 73, Num 5-6, pp 609-612, issn 0946-2171Article

Frequency tuning of diode laser radiation by surface acoustic waveKULAKOVA, L. A; LYUTETSKIY, A. V; PIKHTIN, N. A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 700905.1-700905.7, issn 0277-786X, isbn 978-0-8194-7219-9, 1VolConference Paper

Missing modes in 1.3 μm InGaAsP/InP uncooled Fabry-Perot lasers and their effect on transmission performanceKO, J; KIM, Y; YOON, H et al.Optical and quantum electronics. 2001, Vol 33, Num 1, pp 67-81, issn 0306-8919Article

Effect of well coupling on the TE optical modal gain in quantum-well-based semiconductor lasersWEETMAN, P; KUCHARCZYK, M; WARTAK, M. S et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 4, pp L83-L87, issn 0953-8984Article

Band-structure and optical gain for InAsp/In(GaAs)P MQW laser structuresCHEN, Y. Q; LI, A. Z.Journal of crystal growth. 2001, Vol 227-28, pp 1171-1176, issn 0022-0248Conference Paper

Nonlinear dynamics of optically injected self-pulsating laser diodesLIM, C. G; IEZEKIEL, S; SNOWDEN, C. M et al.IEEE journal of quantum electronics. 2001, Vol 37, Num 5, pp 699-706, issn 0018-9197Article

Superior temperature performance of 1.3 μm AlGaInAs-based semiconductor lasers investigated at high pressure and low temperatureSWEENEY, S. J; HIGASHI, T; ANDREEV, A et al.Physica status solidi. B. Basic research. 2001, Vol 223, Num 2, pp 573-579, issn 0370-1972Article

Four channel Mach-Zehnder demultiplexer using multimode interferometers in InP/InGaAsPHYUN, Kyung-Sook.Optical and quantum electronics. 2003, Vol 35, Num 8, pp 791-799, issn 0306-8919, 9 p.Article

Characteristics of modified single-defect two-dimensional photonic crystal lasersPARK, Hong-Gyu; HWANG, Jeong-Ki; HUH, Joon et al.IEEE journal of quantum electronics. 2002, Vol 38, Num 10, pp 1353-1365, issn 0018-9197, 13 p.Article

Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasersCHEN, J. X; LI, A. Z; CHEN, Y. Q et al.Journal of crystal growth. 2001, Vol 227-28, pp 338-342, issn 0022-0248Conference Paper

High device yield and performance of InGaAsP MQW DFB lasers with absorptive gratingPARK, S. S; PARK, S. W; YU, J. S et al.Electronics Letters. 2007, Vol 43, Num 20, pp 1095-1096, issn 0013-5194, 2 p.Article

Two-port InGaAsP/InP square resonator microlasersCHE, K.-J; LIN, J.-D; HUANG, Y.-Z et al.Electronics letters. 2010, Vol 46, Num 8, pp 585-586, issn 0013-5194, 2 p.Article

100°C 10 Gbit/s directly modulated InGaAsP DFB lasers with Ru-doped semi-insulating buried heterostructureIGA, R; KONDO, Y; TAKESHITA, T et al.Electronics Letters. 2006, Vol 42, Num 5, pp 280-282, issn 0013-5194, 3 p.Article

A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanche photodiode with a flip-chip structure for wavelengths of 1.3 and 1.55 μmKAGAWA, T; KAWAMURA, Y; IWAMURA, H et al.IEEE journal of quantum electronics. 1993, Vol 29, Num 5, pp 1387-1392, issn 0018-9197Article

Analysis of semiconductor microlasers with an equilateral triangle resonator by rate equationsHUANG, Yong-Zhen; GUO, Wei-Hua; YU, Li-Juan et al.IEEE journal of quantum electronics. 2001, Vol 37, Num 10, pp 1259-1264, issn 0018-9197Article

Pulse characterisation of a quantum-well mode-locked laser diode by two-photon absorption frequency-resolved optical gatingOGAWA, K; KUNIMATSU, D; SUZUKI, A et al.Optical and quantum electronics. 2001, Vol 33, Num 7-10, pp 727-733, issn 0306-8919Article

'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP (λ = 1.53-1.55 μm) laser diodesPARASKEVOPOULOS, A; HENSEL, H.-J; SCHELHASE, S et al.Optical and quantum electronics. 2001, Vol 33, Num 7-10, pp 745-750, issn 0306-8919Article

Tailoring of the resonant mode properties of optical nanocavities in two-dimensional photonic crystal slab waveguides : Special issue on photonic bandgapsPAINTER, Oskar; SRINIVASAN, Kartik; O'BRIEN, John D et al.Journal of optics. A, Pure and applied optics (Print). 2001, Vol 3, Num 6, pp S161-S170, issn 1464-4258Article

Surface morphology induced InAs quantum dot or dash formation on InGaAsP/InP (100)SRITIRAWISARN, N; VAN OTTEN, F. W. M; EIJKEMANS, T. J et al.Journal of crystal growth. 2007, Vol 305, Num 1, pp 63-69, issn 0022-0248, 7 p.Article

14XX nm pump lasers for Raman and Er3+ doped fiber amplifiersFETISOVA, N. V; PIKHTIN, N. A; GOLIKOVA, E. G et al.SPIE proceedings series. 2003, pp 372-375, isbn 0-8194-4824-9, 4 p.Conference Paper