Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substratesTHOMAS, Shawn G; JOHNSON, Eric S; TRACY, Clarence et al.IEEE electron device letters. 2005, Vol 26, Num 7, pp 438-440, issn 0741-3106, 3 p.Article

Visible microdisk and photonic crystals lasers based on inGaP/InGaAlP systemZHAOYU ZHANG; LAN YANG; LIU, Victor et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 647914.1-648914.9, issn 0277-786X, isbn 978-0-8194-6592-4, 1VolConference Paper

Performance comparison of AIGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cellsWHEELDON, Jeffrey F; VALDIVIA, Christopher E; ARES, Richard et al.Progress in photovoltaics (Print). 2011, Vol 19, Num 4, pp 442-452, issn 1062-7995, 11 p.Article

Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodesBOCANG QIU; MCDOUGALL, Stewart; YANSON, Dan et al.Optical and quantum electronics. 2009, Vol 40, Num 14-15, pp 1149-1154, issn 0306-8919, 6 p.Conference Paper

SIMS and SEM analysis of In_1-x-yAl_xGa_yP LED structure grown on In_xGa_1-xP graded bufferVINCZE, A; SATKA, A; PETERNAI, L et al.Applied surface science. 2006, Vol 252, Num 19, pp 7279-7282, issn 0169-4332, 4 p.Conference Paper

Modelling and simulation of InGaP solar cells under solar concentration : Series resistance measurement and predictionCHEKNANE, A; HILAL, H. S; CHARLES, J. P et al.Solid state sciences. 2006, Vol 8, Num 5, pp 556-559, issn 1293-2558, 4 p.Article

Optimum design of InGaP/GaAs dual-junction solar cells with different tunnel diodesLEEM, J. W; LEE, Y. T; YU, J. S et al.Optical and quantum electronics. 2009, Vol 41, Num 8, pp 605-612, issn 0306-8919, 8 p.Article

δ-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor depositionLIN, Y. S; HUANG, D. H; CHEN, Y. W et al.Thin solid films. 2007, Vol 515, Num 7-8, pp 3978-3981, issn 0040-6090, 4 p.Article

Pressure and temperature tuning of red laser diodes towards yellow and greenBOHDAN, Roland; YVONYAK, Yurij; MROZOWICZ, Milan et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 8, pp 1841-1844, issn 1862-6300, 4 p.Article

Laser Cooling of a Semiconductor Load Using a Yb:YLF Optical RefrigeratorSELETSKIY, Denis V; MELGAARD, Seth; SHEIK-BAHAE, Mansoor et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7614, issn 0277-786X, isbn 978-0-8194-8010-1 0-8194-8010-X, 1Vol, 761409.1-761409.5Conference Paper

GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layerGROOM, K. M; STEVENS, B. J; CHILDS, D. T et al.Electronics Letters. 2008, Vol 44, Num 15, pp 905-907, issn 0013-5194, 3 p.Article

Characterization of External Quantum Efficiency and Absorption Efficiency in GaAs/ InGaP Double Heterostructures for Laser Cooling ApplicationsCHENGAO WANG; HASSELBECK, Michael P; LI, Chia-Yeh et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7614, issn 0277-786X, isbn 978-0-8194-8010-1 0-8194-8010-X, 1Vol, 76140B.1-76140B.13Conference Paper

Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layersLONGO, M; PARISINI, A; TARRICONE, L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 86, Num 2, pp 157-164, issn 0921-5107Article

Characterization of InP islands on InGaP/GaAs(001) : effect of deposition temperatureBRESSLER-HILL, V; REAVES, C. M; VARMA, S et al.Surface science. 1995, Vol 341, Num 1-2, pp 29-39, issn 0039-6028Article

Islet neogenesis-associated protein-related pentadecapeptide enhances the differentiation of islet-like clusters from human pancreatic duct cellsJUAN LI; YUN WANG; TAO YANG et al.Peptides (New York, NY. 1980). 2009, Vol 30, Num 12, pp 2242-2249, issn 0196-9781, 8 p.Article

Present and Future of Super High Efficiency Multi-Junction Solar CellsYAMAGUCHI, Masafumi; TAKAMOTO, Tatsuya; ARAKI, Kenji et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 688906.1-688906.12, issn 0277-786X, isbn 978-0-8194-7064-5Conference Paper

Fabrication of MIM capacitors with 1000 A silicon nitride layer deposited by PECVD for InGaP/GaAs HBT applicationsSO, Soon-Jin; OH, Doo-Seok; SUNG, Ho-Kun et al.Journal of crystal growth. 2005, Vol 279, Num 3-4, pp 341-348, issn 0022-0248, 8 p.Article

Patterning of a micromechanical coplanar waveguide using a dry etching techniqueHASCIK, S; MOZOLOVA, Z; LALINSKY, T et al.Vacuum. 2002, Vol 69, Num 1-3, pp 283-287, issn 0042-207X, 5 p.Conference Paper

Proton irradiation effects on InGaP/GaAs single heterojunction bipolar transistorsMIN LIU; YUMING ZHANG; HONGLIANG LU et al.Solid-state electronics. 2014, Vol 96, pp 9-13, issn 0038-1101, 5 p.Article

Ordering InGaP epilayer directly grown on Ge substrateWU, Hong-Ming; TSAI, Shi-Jane; CHANG, Yu-Chi et al.Thin solid films. 2014, Vol 570, pp 390-393, issn 0040-6090, 4 p., bConference Paper

An efficient heat-spreader design: First demonstration on InGaP/graded InGaAs base/GaAs collector-up HBTsTSENG, Hsien-Cheng; CHU, Wen-Jen.Solid-state electronics. 2013, Vol 79, pp 290-292, issn 0038-1101, 3 p.Article

Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxyHAN, S. S; HIGO, A; YUNPENG, W et al.Microelectronic engineering. 2013, Vol 112, pp 143-148, issn 0167-9317, 6 p.Article

Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injectionNALLATAMBY, Jean-Christophe; ABDELHADI, Khaled; JACQUET, Jean-Claude et al.Solid-state electronics. 2013, Vol 81, pp 41-50, issn 0038-1101, 10 p.Article

InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectricLIN, Hsien-Cheng; LEE, Fang-Ming; CHENG, Yu-Chun et al.Solid-state electronics. 2012, Vol 68, pp 27-31, issn 0038-1101, 5 p.Article

Current Gain and Offset Voltage in an InGaP/GaAsSb/GaAs Double Heterojunction Bipolar TransistorLIN, Yu-Shyan; NG, Shao-Bin; YU, Wen-Fu et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 12, pp 3339-3343, issn 0018-9383, 5 p.Article