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Passivation de la surface de InP par phosphore et arsenic : contribution à l'étude du transistor MISFET InPChoujaa, Abdelkrim; Blanchet, Robert.1989, 214 p.Thesis

Fabrication of highly luminescent InP/Cd and InP/CdS quantum dotsPARK, Jaehyun; KIM, Sunghoon; KIM, Sungwoo et al.Journal of luminescence. 2010, Vol 130, Num 10, pp 1825-1828, issn 0022-2313, 4 p.Article

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Spectral diffusion of type-II excitons in InP/InAs/InP core-multishell nanowiresMASUMOTO, Yasuaki; GOTO, Ken; PAL, Bipul et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2579-2582, issn 1386-9477, 4 p.Conference Paper

QWIP focal plane arrays on InP substrates for single and dual band thermal imagersEKER, S. U; ARSLAN, Y; KALDIRIM, M et al.Infrared physics & technology. 2009, Vol 52, Num 6, pp 385-390, issn 1350-4495, 6 p.Conference Paper

Analysis of the double laser emission occurring in 1.55-μm InAs-InP (113)B quantum-dot lasersVESELINOV, Kiril; GRILLOT, Frédéric; COMET, Charles et al.IEEE journal of quantum electronics. 2007, Vol 43, Num 9-10, pp 810-816, issn 0018-9197, 7 p.Article

Multiplication characteristics of InP/InGaAs avalanche photodiodes with a thicker charge layerYANLI ZHAO; SUXIANG HE.Optics communications. 2006, Vol 265, Num 2, pp 476-480, issn 0030-4018, 5 p.Article

Step sources in microchannel epitaxy of InPZHENG YAN; NARITSUKA, S; NISHINAGA, T et al.Journal of crystal growth. 1998, Vol 192, Num 1-2, pp 11-17, issn 0022-0248Article