kw.\*:("InP based HEMT")
Results 1 to 5 of 5
Selection :
W-band active integrated antenna oscillator based on full-wave design methodology and 0.1-μm gate InP-based HEMTsINAFUNE, Koji; SANO, Eiichi; MATSUZAKI, Hideaki et al.IEICE transactions on electronics. 2006, Vol 89, Num 7, pp 954-958, issn 0916-8524, 5 p.Conference Paper
InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operationsCHEN, Yeong-Jia; HSU, Wei-Chou; CHEN, Yen-Wei et al.Solid-state electronics. 2005, Vol 49, Num 2, pp 163-166, issn 0038-1101, 4 p.Article
Analytical non-linear charge control model for InAlAs/InGaAs/InAlAs double heterostructure high electron mobility transistor (DH-HEMT)GUPTA, Ritesh; SANDEEP KUMAR AGGARWAL; GUPTA, Mridula et al.Solid-state electronics. 2005, Vol 49, Num 2, pp 167-174, issn 0038-1101, 8 p.Article
Photoreceiver module using an InP HEMT transimpedance amplifier for over 40 Gb/sFUKUYAMA, Hiroyuki; SANO, Kimikazu; MURATA, Koichi et al.IEEE journal of solid-state circuits. 2004, Vol 39, Num 10, pp 1690-1696, issn 0018-9200, 7 p.Conference Paper
W-band Transmitter and Receiver for 10-Gb/s Impulse Radio With an Optical-Fiber InterfaceNAKASHA, Yasuhiro; SATO, Masaru; TAJIMA, Tatsuhiko et al.IEEE transactions on microwave theory and techniques. 2009, Vol 57, Num 12, pp 3171-3180, issn 0018-9480, 10 p., 2Article