Spectroscopie XPS d'oxydes et de sulfures d'InP: composés étalons et couches de passivation = XPS spectroscopy of InP oxides and sulfides: standard compounds and passivating layersHOLLINGER, G; ESTRADA, C; DURAND, J et al.Journal de microscopie et de spectroscopie électroniques. 1988, Vol 13, Num 1, pp 31-48, issn 0395-9279Article

Performance of In-p InP contactBALASHOVA, A. P; SHABELNIKOVA, A. E.Radiotehnika i èlektronika. 1990, Vol 35, Num 8, pp 1715-1719, issn 0033-8494Article

Preparation and characterization of n- and i-butylindium thiolateNOMURA, R; INAZAWA, S; KANAYA, K et al.Polyhedron. 1989, Vol 8, Num 6, pp 763-767, issn 0277-5387, 5 p.Article

Le deuxième congrès des Amérindiens de Guyane française : un tournant de l'histoire?RAZON, J.-P.Les Nouvelles de Survival. 1997, Num 25, pp 10-11, issn 1154-1210Article

Les Indiens en lutte pour l'autonomieBOLAÑOS, F. A; TUTIN, C.Volcans. 1996, Num 23, pp 11-12Article

Direct electrochemical synthesis of alkane- and arenethiolato derivatives of indium and thalliumGREEN, J. H; RAJESH KUMAR; SEUDEAL, N et al.Inorganic chemistry (Print). 1989, Vol 28, Num 1, pp 123-127, issn 0020-1669, 5 p.Article

Chemical etching characteristics of InGaAs/InP and InAIAs/InP heterostructuresSTANO, A.Journal of the Electrochemical Society. 1987, Vol 134, Num 2, pp 448-452, issn 0013-4651Article

Hybrid electron cyclotron resonance-radio-frequency plasma etching of III-V semiconductors in Cl₂-based discharges. II : InP and related compoundsPEARTON, S. J; HOBSON, W. S; CHAKRABARTI, U. K et al.Plasma chemistry and plasma processing. 1991, Vol 11, Num 4, pp 423-438, issn 0272-4324Article

Recent progress in GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengthsSHELLENBARGERA, Z; MAUK, M; COX, J et al.SPIE proceedings series. 1998, pp 138-145, isbn 0-8194-2726-8Conference Paper

Comparison of CH₄/H₂/Ar reactive ion etching and electron cyclotron resonance plasma etching of In-based III-V alloysPEARTON, S. J; CHAKRABARTI, U. K; KATZ, A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 3, pp 1421-1432, issn 0734-211XArticle

Multiple quantum well light modulators for the 1.06 μm range on InP substrates : In_xGa_1-xAs_yP_1-y/InP, InAs_yP_1-y/InP, and coherently strained InAs_yP_1-y/InGa_1-xPWOODWARD, T. K; CHIU, T.-H; SIZER, T. II et al.Applied physics letters. 1992, Vol 60, Num 23, pp 2846-2848, issn 0003-6951Article

Use of hydrogenated chlorofluorocarbon mixtures for reactive ion etching of In-based III-V semiconductorsPEARTON, S. J; HOBSON, W. S; CHAKRABARTI, U. K et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 6, pp 1274-1284, issn 0734-211XArticle

INDIUM : Surge in demand expected from digital broadcast changesAmerican Ceramic Society bulletin. 2008, Vol 87, Num 8, pp 33-34, issn 0002-7812, 2 p.Article

Indium: geology, mineralogy and economics - a reviewSCHWARZ-SCHAMPERA, U; HERZIG, P. M.Zeitschrift für angewandte Geologie. 1999, Vol 45, Num 3, pp 164-169, issn 0044-2259Article

In- or In(I)-employed tailoring of the stereogenic centers in the reformatsky-type reactions of simple ketones, α-alkoxy ketones, and β-keto estersARULANANDA BABU, Srinivasarao; YASUDA, Makoto; SHIBATA, Ikuya et al.Journal of organic chemistry. 2005, Vol 70, Num 25, pp 10408-10419, issn 0022-3263, 12 p.Article

On the reactive evaporation of In and In₂O₃ in an O₂ environmentQIAMIN WANG; FANG, P. H.Journal of the Electrochemical Society. 1990, Vol 137, Num 1, pp 345-346, issn 0013-4651Article

InAsPSb/InAs diode laser emitting in the 2.5 μm rangeAKIBA, S; MATSUSHIMA, Y; IKETANI, T et al.Electronics Letters. 1988, Vol 24, Num 17, pp 1069-1071, issn 0013-5194Article

Electrophysical properties of In₂Te₂-InAs heterojunctionsSYSOEV, B. I; BEZRYADIN, N. N; SHLYK, YU. K et al.Physica status solidi. A. Applied research. 1986, Vol 95, Num 2, pp K169-K173, issn 0031-8965Article

La révolte très politique des Indiens d'EquateurLEMOINE, M.Le Monde diplomatique (Paris. 1954). 1994, Vol 41, Num 488, pp 18-19, issn 0026-9395Article

Observation of laser emission in an InP-AlInAs type II superlatticeLUGAGNE-DELPON, E; VOISIN, P; VOOS, M et al.Applied physics letters. 1992, Vol 60, Num 25, pp 3087-3089, issn 0003-6951Article

High quality long-wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsineMILLER, B. I; YOUNG, M. G; ORON, M et al.Applied physics letters. 1990, Vol 56, Num 15, pp 1439-1441, issn 0003-6951Article

(Pentamethylcyclopentadienyl)indium(I) and -indium(III) compounds: syntheses, reactivities, and X-ray diffraction and electron diffraction studies of In(C₅Me₅)BEACHLEY, O. T; BLOM, R; ROWEN CHURCHILL, M et al.Organometallics. 1989, Vol 8, Num 2, pp 346-356, issn 0276-7333, 11 p.Article

Cathodoluminescence des structures épitaxiques à gradient InAsSbP/InAsMATVEEV, B. A; PETROV, V. I; STUS, N. M et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 7, pp 1244-1247, issn 0015-3222Article

Synthesis and characterization of benzylindium compoundsBARRON, A. R.Journal of the Chemical Society. Dalton transactions. 1989, Num 8, pp 1625-1626, issn 0300-9246, 2 p.Article

Healthy cities vision : An emerging global awareness and Indian perspectiveGUPTA, V. M.Indian Journal of Public Health. 1995, Vol 39, Num 2, pp 50-57, issn 0019-557XConference Paper