Monolithic InP/InGaAsP/InP grating spectrometer for the 1.48-1.56 μm wavelength rangeSCOOLE, J. B. D; SCHERER, A; LEBLANC, H. P et al.Applied physics letters. 1991, Vol 58, Num 18, pp 1949-1951, issn 0003-6951Article

1.5 μm GaInAsP/InP distributed reflector (DR) lasers with SCH structureARIMA, I; SHIM, J.-I; ARAI, S et al.IEEE photonics technology letters. 1990, Vol 2, Num 6, pp 385-387, issn 1041-1135Article

Dynamics of formation of defects in annealed InPHAN, Y; LIU, X; JIAO, J et al.SPIE proceedings series. 1998, pp 5-8, isbn 0-8194-3012-9Conference Paper

Diffraction and topography measurements of InP and InP-based heterostructure devicesGOORSKY, M. S.SPIE proceedings series. 1998, pp 236-243, isbn 0-8194-2756-X, 2VolConference Paper

Distribution of electron dark emission over Schottky-diodes Ag/p-InP surfaceBALASHOVA, A. P; SHABELNIKOVA, A. E.Radiotehnika i èlektronika. 1990, Vol 35, Num 8, pp 1768-1771, issn 0033-8494Article

Performance of In-p InP contactBALASHOVA, A. P; SHABELNIKOVA, A. E.Radiotehnika i èlektronika. 1990, Vol 35, Num 8, pp 1715-1719, issn 0033-8494Article

Graded InGaP schottky diodes on Si-doped InPPAN, N; CARTER, J; JACKSON, G. S et al.Applied physics letters. 1992, Vol 60, Num 15, pp 1839-1841, issn 0003-6951Article

High power and high-temperature operation of GalnP/AlGalnP strained multiple quantum well lasersMANNOH, M; HOSHINA, J; KAMIYAMA, S et al.Applied physics letters. 1993, Vol 62, Num 11, pp 1173-1175, issn 0003-6951Article

Room temperature operation of ultrashort wavelength (619 nm) AlGaInP/GaInP tensile strained quantum well lasersSUMMERS, H. D; BLOOD, P.Electronics Letters. 1993, Vol 29, Num 11, pp 1007-1008, issn 0013-5194Article

600 nm-Range GaInP/AlInP multi-quantum-well (MQW) lasers grown on misorientation substrates by gas source molecular beam epitaxy (GS-MBE)KIKUCHI, A; KISHINO, K; KANEKO, Y et al.Japanese journal of applied physics. 1991, Vol 30, Num 12B, pp 3865-3872, issn 0021-4922, 1Article

Low (2.0kA/cm²) threshold current density operation of 629 nm GaInP/AlInP multiquantum well lasers grown by gas source molecular beam epitaxy on 15° off (100) GaAs substratesKIKUCHI, A; KISHINO, K; KANEKO, Y et al.Electronics Letters. 1991, Vol 27, Num 14, pp 1301-1303, issn 0013-5194Article

Integration of detectors with GaInAsP/InP carrier depletion optical switchesCAVAILLES, J. A; RENAUD, M; JARRY, P et al.Electronics Letters. 1990, Vol 26, Num 21, pp 1783-1784, issn 0013-5194Article

Investigation of the TE and TM polarised laser emission in GaInP/AlGaInp lasers by growth-controlled strainBOERMANS, M. J. B; HAGEN, S. H; VALSTER, A et al.Electronics Letters. 1990, Vol 26, Num 18, pp 1438-1439, issn 0013-5194Article

InAlP/InAlGaP distributed Bragg reflectors for visible vertical cavity surface-emitting lasersSCHNEIDER, R. P; LOTT, J. A.Applied physics letters. 1993, Vol 62, Num 22, pp 2748-2750, issn 0003-6951Article

High-power 630-640 nm GaInP/GaAlInP laser diodesOU, S. S; YANG, J. J; FU, R. J et al.Applied physics letters. 1992, Vol 61, Num 8, pp 892-894, issn 0003-6951Article

Tm³⁺-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxyPRESSEL, K; WEBER, J; HILLER, C et al.Applied physics letters. 1992, Vol 61, Num 5, pp 560-562, issn 0003-6951Article

Room temperature CW operation of Ga_0.3In_0.7As/GaInAsP/InP strained MQW lasers with wire active regionKUDO, K; MIYAKE, Y; HIRAYAMA, H et al.IEEE photonics technology letters. 1992, Vol 4, Num 10, pp 1089-1092, issn 1041-1135Article

Thermal behavior of visible AlGaInP-GaInP ridge laser diodesMARTIN, O. J. F; BONA, G.-L; WOLF, P et al.IEEE journal of quantum electronics. 1992, Vol 28, Num 11, pp 2582-2588, issn 0018-9197Article

Theoretical analysis of valance subband structures and optical gain of GaInP/AlGaInP compressive strained-quantum wellsKAMIYAMA, S; UENOYAMA, T; MANNOH, M et al.IEEE photonics technology letters. 1993, Vol 5, Num 4, pp 439-441, issn 1041-1135Article

Multiple quantum well light modulators for the 1.06 μm range on InP substrates : In_xGa_1-xAs_yP_1-y/InP, InAs_yP_1-y/InP, and coherently strained InAs_yP_1-y/InGa_1-xPWOODWARD, T. K; CHIU, T.-H; SIZER, T. II et al.Applied physics letters. 1992, Vol 60, Num 23, pp 2846-2848, issn 0003-6951Article

Visible (657 nm) InGaP/InAlGaP strained quantum well vertical-cavity surface-emitting laserSCHNEIDER, R. P; BRYAN, R. P; LOTT, J. A et al.Applied physics letters. 1992, Vol 60, Num 15, pp 1830-1832, issn 0003-6951Article

High performance 634nm InGaP/InGaAlP strained quantum well lasersCHANG-HASNAIN, C. J; BHAT, R; KOZA, M. A et al.Electronics Letters. 1991, Vol 27, Num 17, pp 1553-1555, issn 0013-5194Article

Insulated-gate multiple quantum well optical modulator on InPCHEN, C. W; IYER, R; LEE, H. Y et al.Applied physics letters. 1990, Vol 57, Num 19, pp 1964-1966, issn 0003-6951Article

MOVPE of AlGaInP/GaInPO heterostructures for visible lasersROENTGEN, P; HEUBERGER, W; BONA, G. L et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 724-730, issn 0022-0248Conference Paper

Superluminescent diodes for visible (670 nm) spectral range based on AlGaInP/GaInP heterostructures with tapered grounded absorberSEMENOV, A. T; SHIDLOVSKI, V. R; SAFIN, S. A et al.Electronics Letters. 1993, Vol 29, Num 6, pp 530-532, issn 0013-5194Article