Monolithic InP/InGaAsP/InP grating spectrometer for the 1.48-1.56 μm wavelength rangeSCOOLE, J. B. D; SCHERER, A; LEBLANC, H. P et al.Applied physics letters. 1991, Vol 58, Num 18, pp 1949-1951, issn 0003-6951Article

1.5 μm GaInAsP/InP distributed reflector (DR) lasers with SCH structureARIMA, I; SHIM, J.-I; ARAI, S et al.IEEE photonics technology letters. 1990, Vol 2, Num 6, pp 385-387, issn 1041-1135Article

Graded InGaP schottky diodes on Si-doped InPPAN, N; CARTER, J; JACKSON, G. S et al.Applied physics letters. 1992, Vol 60, Num 15, pp 1839-1841, issn 0003-6951Article

Performance of In-p InP contactBALASHOVA, A. P; SHABELNIKOVA, A. E.Radiotehnika i èlektronika. 1990, Vol 35, Num 8, pp 1715-1719, issn 0033-8494Article

Dynamics of formation of defects in annealed InPHAN, Y; LIU, X; JIAO, J et al.SPIE proceedings series. 1998, pp 5-8, isbn 0-8194-3012-9Conference Paper

Diffraction and topography measurements of InP and InP-based heterostructure devicesGOORSKY, M. S.SPIE proceedings series. 1998, pp 236-243, isbn 0-8194-2756-X, 2VolConference Paper

Distribution of electron dark emission over Schottky-diodes Ag/p-InP surfaceBALASHOVA, A. P; SHABELNIKOVA, A. E.Radiotehnika i èlektronika. 1990, Vol 35, Num 8, pp 1768-1771, issn 0033-8494Article

Formation of nanodots on oblique ion sputtered InP surfacesSOM, T; CHINI, T. K; KATHARIA, Y. S et al.Applied surface science. 2009, Vol 256, Num 2, pp 562-566, issn 0169-4332, 5 p.Conference Paper

Study of P-on-N GaINP2/GaAs tandem cellsCHEN, M. B; ZHANG, Z. W; XIANG, X. B et al.sans titre. 2002, pp 900-903, isbn 0-7803-7471-1, 4 p.Conference Paper

InAlP/InAlGaP distributed Bragg reflectors for visible vertical cavity surface-emitting lasersSCHNEIDER, R. P; LOTT, J. A.Applied physics letters. 1993, Vol 62, Num 22, pp 2748-2750, issn 0003-6951Article

High-power 630-640 nm GaInP/GaAlInP laser diodesOU, S. S; YANG, J. J; FU, R. J et al.Applied physics letters. 1992, Vol 61, Num 8, pp 892-894, issn 0003-6951Article

Tm³⁺-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxyPRESSEL, K; WEBER, J; HILLER, C et al.Applied physics letters. 1992, Vol 61, Num 5, pp 560-562, issn 0003-6951Article

Room temperature CW operation of Ga_0.3In_0.7As/GaInAsP/InP strained MQW lasers with wire active regionKUDO, K; MIYAKE, Y; HIRAYAMA, H et al.IEEE photonics technology letters. 1992, Vol 4, Num 10, pp 1089-1092, issn 1041-1135Article

Thermal behavior of visible AlGaInP-GaInP ridge laser diodesMARTIN, O. J. F; BONA, G.-L; WOLF, P et al.IEEE journal of quantum electronics. 1992, Vol 28, Num 11, pp 2582-2588, issn 0018-9197Article

Theoretical analysis of valance subband structures and optical gain of GaInP/AlGaInP compressive strained-quantum wellsKAMIYAMA, S; UENOYAMA, T; MANNOH, M et al.IEEE photonics technology letters. 1993, Vol 5, Num 4, pp 439-441, issn 1041-1135Article

Multiple quantum well light modulators for the 1.06 μm range on InP substrates : In_xGa_1-xAs_yP_1-y/InP, InAs_yP_1-y/InP, and coherently strained InAs_yP_1-y/InGa_1-xPWOODWARD, T. K; CHIU, T.-H; SIZER, T. II et al.Applied physics letters. 1992, Vol 60, Num 23, pp 2846-2848, issn 0003-6951Article

Visible (657 nm) InGaP/InAlGaP strained quantum well vertical-cavity surface-emitting laserSCHNEIDER, R. P; BRYAN, R. P; LOTT, J. A et al.Applied physics letters. 1992, Vol 60, Num 15, pp 1830-1832, issn 0003-6951Article

High performance 634nm InGaP/InGaAlP strained quantum well lasersCHANG-HASNAIN, C. J; BHAT, R; KOZA, M. A et al.Electronics Letters. 1991, Vol 27, Num 17, pp 1553-1555, issn 0013-5194Article

Ultrafast polarisation switching in ridge-waveguide laser diodesKLEHR, A; BARWOLFF, A; MÜLLER, R et al.Electronics Letters. 1991, Vol 27, Num 18, pp 1680-1682, issn 0013-5194Article

Insulated-gate multiple quantum well optical modulator on InPCHEN, C. W; IYER, R; LEE, H. Y et al.Applied physics letters. 1990, Vol 57, Num 19, pp 1964-1966, issn 0003-6951Article

MOVPE of AlGaInP/GaInPO heterostructures for visible lasersROENTGEN, P; HEUBERGER, W; BONA, G. L et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 724-730, issn 0022-0248Conference Paper

Superluminescent diodes for visible (670 nm) spectral range based on AlGaInP/GaInP heterostructures with tapered grounded absorberSEMENOV, A. T; SHIDLOVSKI, V. R; SAFIN, S. A et al.Electronics Letters. 1993, Vol 29, Num 6, pp 530-532, issn 0013-5194Article

Low threshold, 633 nm, single tensile-strained quantum well Ga_0.6In_0.4P/(Al_xGa_1-x)_0.5P laserBOUR, D. P; TREAT, D. W; THORNTON, R. L et al.Applied physics letters. 1992, Vol 60, Num 16, pp 1927-1929, issn 0003-6951Article

Effects of strained-layer structures on the threshold current density of AlGaInP/GaInP visible lasersHASHIMOTO, J.-I; KATSUYAMA, T; SHINKAI, J et al.Applied physics letters. 1991, Vol 58, Num 9, pp 879-880, issn 0003-6951Article

Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GalnP / AllnP visible lasersKISHINO, K; KIKUCHI, A; KANEKO, Y et al.Applied physics letters. 1991, Vol 58, Num 17, pp 1822-1824, issn 0003-6951Article