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680-nm band GaInP/AlGaInP tapered stripe laserIKEDA, M; SATO, H; OHATA, T et al.Applied physics letters. 1987, Vol 51, Num 20, pp 1572-1573, issn 0003-6951Article

Pressure and temperature tuning of red laser diodes towards yellow and greenBOHDAN, Roland; YVONYAK, Yurij; MROZOWICZ, Milan et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 8, pp 1841-1844, issn 1862-6300, 4 p.Article

high-optical-quality GaInP and GaInP/AlInP double heterostructure lasers grown on GaAs substrates by gas-source molecular-beam epitaxyKIKUCHI, A; KISHINO, K; KANEKO, Y et al.Journal of applied physics. 1989, Vol 66, Num 9, pp 4557-4559, issn 0021-8979Article

Molecular beam epitaxial growth of InGaP/InAlP quantum well structures for the visible wavelength regionKAWAMURA, Y; ASAHI, H.Applied physics letters. 1984, Vol 45, Num 2, pp 152-154, issn 0003-6951Article

Monolithic InP/InGaAsP/InP grating spectrometer for the 1.48-1.56 μm wavelength rangeSCOOLE, J. B. D; SCHERER, A; LEBLANC, H. P et al.Applied physics letters. 1991, Vol 58, Num 18, pp 1949-1951, issn 0003-6951Article

1.5 μm GaInAsP/InP distributed reflector (DR) lasers with SCH structureARIMA, I; SHIM, J.-I; ARAI, S et al.IEEE photonics technology letters. 1990, Vol 2, Num 6, pp 385-387, issn 1041-1135Article

Precise quantized Hall resistance measurements in GaAs/Al_xGa_1-xAs and In_xGa_1-xAs/InP heterostructuresDELAHAYE, F; DOMINGUEZ, D; ALEXANDRE, F et al.Metrologia. 1986, Vol 22, Num 2, pp 103-110, issn 0026-1394Article

Junction formation techniques for indium phosphide solar cellsSPITZER, M. B; KEAVNEY, C. J; VERNON, S. M et al.Photovoltaic specialists conference. 19. 1987, pp 146-152Conference Paper

1.3 μm high-power BH laser on p-InP substratesASANO, T; OKUMURA, T.IEEE journal of quantum electronics. 1985, Vol 21, Num 6, pp 619-622, issn 0018-9197Article

High-speed InP optoelectronic switch with a tandem structureHORI, Y; PASLASKI, J; YI, M et al.Applied physics letters. 1985, Vol 46, Num 8, pp 749-751, issn 0003-6951Article

Ion beam etching of InP. II: Reactive etching with halogen-based sources gasesYUBA, Y; GAMO, K; XI GUAN HE et al.Japanese journal of applied physics. 1983, Vol 22, Num 7, pp 1211-1214, issn 0021-4922Article

n⁺-p-p⁺ structure InP solar cells grown by organometallic vapor-phase epitaxySUGO, M; YAMAMOTO, A; YAMAGUCHI, M et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 4, pp 772-777, issn 0018-9383Article

Preferential etching of InP for submicron fabrication with HCl/H₃PO₄ solutionUEKUSA, S; OIGAWA, K; TACANO, M et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 3, pp 671-673, issn 0013-4651Article

High efficiency GaAs and InP thin-film solar cells fabricated on Si substratesYAMAGUCHI, M; YAMAMOTO, A; ITOH, Y et al.Photovoltaic specialists conference. 19. 1987, pp 267-272Conference Paper

2-D particle modelling of the InP MISFETMOUIS, M; PONE, J. F; CASTAGNE, R et al.Solid-state electronics. 1984, Vol 27, Num 7, pp 659-665, issn 0038-1101Article

Study and application of the mass transport phenomenon in InPCHEN, T. R; CHIU, L. C; HASSON, A et al.Journal of applied physics. 1983, Vol 54, Num 5, pp 2407-2412, issn 0021-8979Article

Characterization and modelling of open tube diffused N+P bulk InP solar cellsBOTHRA, S; BHIMNATHWALA, H. G; PARAT, K. K et al.Photovoltaic specialists conference. 19. 1987, pp 261-266Conference Paper

P/N InP homofunction solar cells by LPE and MDCVD techniquesCHOI, K. Y; SHEN, C. C; MILLER, B. I et al.Photovoltaic specialists conference. 19. 1987, pp 255-260Conference Paper

Current drift phenomena and spectroscopic measurement method for insulator trap level parameters in InP MISFETsYAMAGUCHI, E; MINAKATA, M; FURUKAWA, Y et al.Japanese journal of applied physics. 1984, Vol 23, Num 1, pp 49-51, issn 0021-4922Article

The correlation of channel mobility with interface state measurements on InP MOSFET structuresCAMERON, D. C; FOREMAN, B. J.Solid-state electronics. 1984, Vol 27, Num 4, pp 305-309, issn 0038-1101Article

OPTICAL RESPONSE TIME OF IN_0.53GA_0.47AS/INP AVALANCHE PHOTODIODESFORREST SR; KIM OK; SMITH RG et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 95-98; BIBL. 10 REF.Article