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SELECTIVELY-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS HETEROSTRUCTURE FIELD EFFECT TRANSISTORPEARSALL TP; HENDEL R; O'CONNOR P et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 5-8; BIBL. 14 REF.Article

THE USE OF METALORGANICS IN THE PREPARATION OF SEMICONDUCTOR MATERIALS. V. THE FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYSMANASEVIT HM; SIMPSON WI.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 1; PP. 135-137; BIBL. 14 REF.Serial Issue

Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunctionWELCH, D. F; WICKS, G. W; EASTMAN, L. F et al.Journal of applied physics. 1984, Vol 55, Num 8, pp 3176-3179, issn 0021-8979Article

Required grading length to eliminate the heterojunction spike in npn In0.52Al0.48As/In0.53Ga0.47As/InP bipolar transistorsCHAND, N; MORKOC, H.Electronics Letters. 1985, Vol 21, Num 19, pp 841-843, issn 0013-5194Article

Effective mass filtering: giant quantum amplification of the photocurrent in a semiconductor superlatticeCAPASSO, F; KHALID MOHAMMED; CHO, A. Y et al.Applied physics letters. 1985, Vol 47, Num 4, pp 420-422, issn 0003-6951Article

Photoluminescence determination of well depth of Ga0.47In0.53As/Al0.48In0.52As in an ultrathin single quantum wellSHUM, K; HO, P. P; ALFANO, R. R et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 6, pp 3806-3810, issn 0163-1829Article

ORIENTED GROWTH OF WHISKERS OF AIIIBV COMPOUNDS BY VLS-MECHANISM.GIVARGIZOV EI.1975; KRISTALL U. TECH.; DTSCH.; DA. 1975; VOL. 10; NO 5; PP. 473-484; ABS. RUSSE; BIBL. 19 REF.Article

In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As abrupt double-heterojunction bipolar transistorsWAI LEE; FONSTAD, C. G.IEEE electron device letters. 1986, Vol 7, Num 12, pp 683-685, issn 0741-3106Article

GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6 MU MALAVI K; PEARSALL TP; FORREST SR et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 227-229; BIBL. 11 REF.Article

BERYLLIUM DOPING IN GA0.47IN0.53AS AND AL0.48IN0.52 AS GROWN BY MOLECULAR-BEAM EPITAXYCHENG KY; CHO AY; BONNER WA et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4672-4675; BIBL. 18 REF.Article

InGaAs/InAlAs hot-electron transistorREDDY, U. K; CHEN, J; PENG, C. K et al.Applied physics letters. 1986, Vol 48, Num 26, pp 1799-1801, issn 0003-6951Article

Optical properties of GaInAs/AlInAs single quantum wellsWELCH, D. F; WICKS, G. W; EASTMAN, L. F et al.Applied physics letters. 1983, Vol 43, Num 8, pp 762-764, issn 0003-6951Article

Resonant-cavity InGaAIAs/InGaAs/InAIAs phototransistors with high gain for 1.3-1.6 μmANANTH DODABALAPUR; CHANG, T. Y.Applied physics letters. 1992, Vol 60, Num 8, pp 929-931, issn 0003-6951Article

Bandgap resonant optical nonlinearities in InAs and their use in optical bistabilityPOOLE, C. D; GARMIRE, E.IEEE journal of quantum electronics. 1985, Vol 21, Num 9, pp 1370-1378, issn 0018-9197Article

InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxyKAWAMURA, Y; ASAHI, H; WAKITA, K et al.Electronics Letters. 1984, Vol 20, Num 11, pp 459-460, issn 0013-5194Article

InGaAlAs/InGaAs and InAlAs/InGaAlAs quantum-well structures grown by MBE using pulsed molecular beam methodFUJII, T; NAKATA, Y; MUTO, S et al.Japanese journal of applied physics. 1986, Vol 25, Num 7, pp L598-L600, issn 0021-4922, part 2Article

An n-channel BICFET in the InGaAs/InAlGaAs/InAlAs material systemKIELY, P. A; TAYLOR, G. W; IZABELLE, A et al.IEEE electron device letters. 1989, Vol 10, Num 7, pp 304-306, issn 0741-3106Article

Double junction AllnAs/GaInAs multiquantum well avalanche photodiodesLE BELLEGO, Y; PRASEUTH, J. P; SCAVENNEC, A et al.Electronics Letters. 1991, Vol 27, Num 24, pp 2228-2230, issn 0013-5194Article

Magnetophonon resonance and remote phonon scattering in a GaInAs-AlInAs multiquantum wellNICHOLAS, R. J; BEN AMOR, S; PORTAL, J. C et al.Semiconductor science and technology. 1989, Vol 4, Num 2, pp 116-118, issn 0268-1242Article

Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurementsYU, Y.-J; BOSMAN, G; BHATTACHARYA, P. K et al.Applied physics letters. 1987, Vol 51, Num 18, pp 1433-1435, issn 0003-6951Article

Determination of the microscopic quality of InGaAs-InAlAs interfaces by photoluminescence. Role of interrupted molecular beam epitaxial growthJUANG, F.-Y; BHATTACHARYA, P. K; SINGH, J et al.Applied physics letters. 1986, Vol 48, Num 4, pp 290-292, issn 0003-6951Article

InGaAs/InAlGaAs hot-electron transitors with current gain of 15IMAMURA, K; MUTO, S; FUJII, T et al.Electronics Letters. 1986, Vol 22, Num 21, pp 1148-1150, issn 0013-5194Article

Optical characterization of InGaAs-InAlAs strained-layer superlattices grown by molecular beam epitaxyNISHI, K; HIROSE, K; MIZUTANI, T et al.Applied physics letters. 1986, Vol 49, Num 13, pp 794-796, issn 0003-6951Article

A In0.53Ga0.47As-In0.48As single quantum well field-effect transistorSEO, K. S; BHATTACHARYA, P. K; NASHIMOTO, Y et al.IEEE electron device letters. 1985, Vol 6, Num 12, pp 642-644, issn 0741-3106Article

Frequency-shifted polaron coupling in Ga0.47In0.53As heterojunctionsNICHOLAS, R. J; BRUNEL, L. C; HUANT, S et al.Physical review letters. 1985, Vol 55, Num 8, pp 883-886, issn 0031-9007Article

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