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Required grading length to eliminate the heterojunction spike in npn In_0.52Al_0.48As/In_0.53Ga_0.47As/InP bipolar transistorsCHAND, N; MORKOC, H.Electronics Letters. 1985, Vol 21, Num 19, pp 841-843, issn 0013-5194Article

Facet oxidation of InGaAsP/InP and InGaAs/InP lasersFUKUDA, M.IEEE journal of quantum electronics. 1983, Vol 19, Num 11, pp 1692-1698, issn 0018-9197Article

Effective mass filtering: giant quantum amplification of the photocurrent in a semiconductor superlatticeCAPASSO, F; KHALID MOHAMMED; CHO, A. Y et al.Applied physics letters. 1985, Vol 47, Num 4, pp 420-422, issn 0003-6951Article

Photoluminescence determination of well depth of Ga_0.47In_0.53As/Al_0.48In_0.52As in an ultrathin single quantum wellSHUM, K; HO, P. P; ALFANO, R. R et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 6, pp 3806-3810, issn 0163-1829Article

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GA_0.47IN_0.53AS/AL_0.48IN_0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6 MU MALAVI K; PEARSALL TP; FORREST SR et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 227-229; BIBL. 11 REF.Article

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Resonant-cavity InGaAIAs/InGaAs/InAIAs phototransistors with high gain for 1.3-1.6 μmANANTH DODABALAPUR; CHANG, T. Y.Applied physics letters. 1992, Vol 60, Num 8, pp 929-931, issn 0003-6951Article

CW LASER ACTIVATED FLOW APPLIED TO THE PLANARIZATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR STRUCTURESDELFINO M; REIFSTECK TA.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 715-717; BIBL. 6 REF.Article

Direct comparison of InGaAs/InGaAlAs and InGaAs/InGaAsP quantum well modulatorsHAWDON, B. J; TÜTKEN, T; HANGLEITER, A et al.Electronics Letters. 1993, Vol 29, Num 8, pp 705-707, issn 0013-5194Article

InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxyKAWAMURA, Y; ASAHI, H; WAKITA, K et al.Electronics Letters. 1984, Vol 20, Num 11, pp 459-460, issn 0013-5194Article

Surface states resonance on In-terminated InAs(0 0 1)4 x 2-c(8 x 2) clean surfaceDE PADOVA, P; PERFETTI, P; QUARESIMA, C et al.Applied surface science. 2003, Vol 212-13, pp 10-16, issn 0169-4332, 7 p.Conference Paper

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Magnetophonon resonance and remote phonon scattering in a GaInAs-AlInAs multiquantum wellNICHOLAS, R. J; BEN AMOR, S; PORTAL, J. C et al.Semiconductor science and technology. 1989, Vol 4, Num 2, pp 116-118, issn 0268-1242Article

Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurementsYU, Y.-J; BOSMAN, G; BHATTACHARYA, P. K et al.Applied physics letters. 1987, Vol 51, Num 18, pp 1433-1435, issn 0003-6951Article

Determination of the microscopic quality of InGaAs-InAlAs interfaces by photoluminescence. Role of interrupted molecular beam epitaxial growthJUANG, F.-Y; BHATTACHARYA, P. K; SINGH, J et al.Applied physics letters. 1986, Vol 48, Num 4, pp 290-292, issn 0003-6951Article

InGaAs/InAlGaAs hot-electron transitors with current gain of 15IMAMURA, K; MUTO, S; FUJII, T et al.Electronics Letters. 1986, Vol 22, Num 21, pp 1148-1150, issn 0013-5194Article

Optical characterization of InGaAs-InAlAs strained-layer superlattices grown by molecular beam epitaxyNISHI, K; HIROSE, K; MIZUTANI, T et al.Applied physics letters. 1986, Vol 49, Num 13, pp 794-796, issn 0003-6951Article

A In_0.53Ga_0.47As-In_0.48As single quantum well field-effect transistorSEO, K. S; BHATTACHARYA, P. K; NASHIMOTO, Y et al.IEEE electron device letters. 1985, Vol 6, Num 12, pp 642-644, issn 0741-3106Article

Frequency-shifted polaron coupling in Ga_0.47In_0.53As heterojunctionsNICHOLAS, R. J; BRUNEL, L. C; HUANT, S et al.Physical review letters. 1985, Vol 55, Num 8, pp 883-886, issn 0031-9007Article

High-temperature heavy-hole and light-hole excitons and well-width dependence of excitons in InGaAs/InAlAs multiple-quantum-well structuresKAWAMURA, Y; WAKITA, K; ASAHI, H et al.Electronics Letters. 1985, Vol 21, Num 24, pp 1168-1169, issn 0013-5194Article

Density of the 2D electron gas in modulation doped GaInAs/AlInAs layers from a charge control analysisRAY CHAUDHURI, D; ROY, J. B; BASU, P. K et al.Physica status solidi. A. Applied research. 1984, Vol 86, Num 1, pp K79-K82, issn 0031-8965Article