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SELECTIVELY-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS HETEROSTRUCTURE FIELD EFFECT TRANSISTORPEARSALL TP; HENDEL R; O'CONNOR P et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 5-8; BIBL. 14 REF.Article

Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunctionWELCH, D. F; WICKS, G. W; EASTMAN, L. F et al.Journal of applied physics. 1984, Vol 55, Num 8, pp 3176-3179, issn 0021-8979Article

Required grading length to eliminate the heterojunction spike in npn In0.52Al0.48As/In0.53Ga0.47As/InP bipolar transistorsCHAND, N; MORKOC, H.Electronics Letters. 1985, Vol 21, Num 19, pp 841-843, issn 0013-5194Article

Facet oxidation of InGaAsP/InP and InGaAs/InP lasersFUKUDA, M.IEEE journal of quantum electronics. 1983, Vol 19, Num 11, pp 1692-1698, issn 0018-9197Article

Effective mass filtering: giant quantum amplification of the photocurrent in a semiconductor superlatticeCAPASSO, F; KHALID MOHAMMED; CHO, A. Y et al.Applied physics letters. 1985, Vol 47, Num 4, pp 420-422, issn 0003-6951Article

Photoluminescence determination of well depth of Ga0.47In0.53As/Al0.48In0.52As in an ultrathin single quantum wellSHUM, K; HO, P. P; ALFANO, R. R et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 6, pp 3806-3810, issn 0163-1829Article

In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As abrupt double-heterojunction bipolar transistorsWAI LEE; FONSTAD, C. G.IEEE electron device letters. 1986, Vol 7, Num 12, pp 683-685, issn 0741-3106Article

GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6 MU MALAVI K; PEARSALL TP; FORREST SR et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 227-229; BIBL. 11 REF.Article

Pb induced charge accumulation on InAs(111)BSZAMOTA-LEANDERSSON, K; BUGOI, R; GOTHELID, M et al.Surface science. 2007, Vol 601, Num 15, pp 3246-3252, issn 0039-6028, 7 p.Article

InGaAs/InAlAs hot-electron transistorREDDY, U. K; CHEN, J; PENG, C. K et al.Applied physics letters. 1986, Vol 48, Num 26, pp 1799-1801, issn 0003-6951Article

Optical properties of GaInAs/AlInAs single quantum wellsWELCH, D. F; WICKS, G. W; EASTMAN, L. F et al.Applied physics letters. 1983, Vol 43, Num 8, pp 762-764, issn 0003-6951Article

SUPPRESSING AL AUTODIFFUSION IN IMPLANTATION AMORPHIZED AND RECRYSTALLIZED SILICON ON SAPPHIRE FILMSREEDY RE; SIGMON TW; CHRISTEL LA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 707-709; BIBL. 7 REF.Article

Resonant-cavity InGaAIAs/InGaAs/InAIAs phototransistors with high gain for 1.3-1.6 μmANANTH DODABALAPUR; CHANG, T. Y.Applied physics letters. 1992, Vol 60, Num 8, pp 929-931, issn 0003-6951Article

Bandgap resonant optical nonlinearities in InAs and their use in optical bistabilityPOOLE, C. D; GARMIRE, E.IEEE journal of quantum electronics. 1985, Vol 21, Num 9, pp 1370-1378, issn 0018-9197Article

CW LASER ACTIVATED FLOW APPLIED TO THE PLANARIZATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR STRUCTURESDELFINO M; REIFSTECK TA.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 715-717; BIBL. 6 REF.Article

LASER-FORMED CONNECTIONS USING POLYIMIDERAFFEL JI; FREIDIN JF; CHAPMAN GH et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 705-706; BIBL. 6 REF.Article

InGaAlAs/InGaAs and InAlAs/InGaAlAs quantum-well structures grown by MBE using pulsed molecular beam methodFUJII, T; NAKATA, Y; MUTO, S et al.Japanese journal of applied physics. 1986, Vol 25, Num 7, pp L598-L600, issn 0021-4922, part 2Article

Direct comparison of InGaAs/InGaAlAs and InGaAs/InGaAsP quantum well modulatorsHAWDON, B. J; TÜTKEN, T; HANGLEITER, A et al.Electronics Letters. 1993, Vol 29, Num 8, pp 705-707, issn 0013-5194Article

InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxyKAWAMURA, Y; ASAHI, H; WAKITA, K et al.Electronics Letters. 1984, Vol 20, Num 11, pp 459-460, issn 0013-5194Article

Surface states resonance on In-terminated InAs(0 0 1)4 x 2-c(8 x 2) clean surfaceDE PADOVA, P; PERFETTI, P; QUARESIMA, C et al.Applied surface science. 2003, Vol 212-13, pp 10-16, issn 0169-4332, 7 p.Conference Paper

An n-channel BICFET in the InGaAs/InAlGaAs/InAlAs material systemKIELY, P. A; TAYLOR, G. W; IZABELLE, A et al.IEEE electron device letters. 1989, Vol 10, Num 7, pp 304-306, issn 0741-3106Article

Microdisk lasersLEVI, A. F. J.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1297-1302, issn 0038-1101Conference Paper

Double junction AllnAs/GaInAs multiquantum well avalanche photodiodesLE BELLEGO, Y; PRASEUTH, J. P; SCAVENNEC, A et al.Electronics Letters. 1991, Vol 27, Num 24, pp 2228-2230, issn 0013-5194Article

Magnetophonon resonance and remote phonon scattering in a GaInAs-AlInAs multiquantum wellNICHOLAS, R. J; BEN AMOR, S; PORTAL, J. C et al.Semiconductor science and technology. 1989, Vol 4, Num 2, pp 116-118, issn 0268-1242Article

Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurementsYU, Y.-J; BOSMAN, G; BHATTACHARYA, P. K et al.Applied physics letters. 1987, Vol 51, Num 18, pp 1433-1435, issn 0003-6951Article

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