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The luminescence of bismuth (III) in indium orthoborateBLASSE, G; DE MELLO DONEGA, C; BEREZOVSKAYA, I et al.Solid state communications. 1994, Vol 91, Num 1, pp 29-31, issn 0038-1098Article

Kinetic study of metalorganic molecular beam epitaxy of GaP, InP, and GaxIn1-xPGARCIA, J. C; MAUREL, P; BOVE, P et al.Journal of applied physics. 1991, Vol 69, Num 5, pp 3297-3302, issn 0021-8979Article

Synthesis and characterization of benzylindium compoundsBARRON, A. R.Journal of the Chemical Society. Dalton transactions. 1989, Num 8, pp 1625-1626, issn 0300-9246, 2 p.Article

Thermal decomposition of butylindium thiolates and preparation of indium sulfide powdersNOMURA, R; INAZAWA, S; KANAYA, K et al.Applied organometallic chemistry. 1989, Vol 3, Num 2, pp 195-197, issn 0268-2605, 3 p.Article

InGaAs quantum dots grown with As4 and As2 sources using molecular beam epitaxySUGAYA, T; FURUE, S; AMANO, T et al.Journal of crystal growth. 2007, Vol 301-302, pp 801-804, issn 0022-0248, 4 p.Conference Paper

Study of the long-wavelength optic phonons in AlGaInP and AlGaInAsLIANHUI CHEN; GUANGHAN FAN; YAOYONG MENG et al.Microelectronics journal. 2004, Vol 35, Num 2, pp 125-130, issn 0959-8324, 6 p.Article

Design of ITO/transparent resin optically selective transparent compositeMIYAZAKI, Hidetoshi; OTA, Toshitaka; YASUI, Itaru et al.Solar energy materials and solar cells. 2003, Vol 79, Num 1, pp 51-55, issn 0927-0248, 5 p.Article

New reduced oxygen precursors for the MOVPE of optoelectronic materials: High purity metalorganics for the production of III-V compound semiconductors by MOVPE : Croissance épitaxiale en phase vapeur aux organométalliquesSMITH, L. M.Le Vide (1995). 2002, Vol 57, Num 305, pp 484-496, issn 1266-0167, 13 p.Article

Laser created thin film sensors based on Sn- and indium compoundsMYSLIK, V; VYSLOUZIL, F; VRNATA, M et al.Laser physics. 2002, Vol 12, Num 2, pp 329-333, issn 1054-660XConference Paper

Pulsed-laser-induced quantum well intermixing on the InGaAs/InGaAsP MQW waveguide photodetectorLI, Na; ONG, T. K; CHAN, Y. C et al.SPIE proceedings series. 2002, pp 167-172, isbn 0-8194-4389-1Conference Paper

Crystal structure of sodium indium (monohydrogenmonophosphate-dihydrogenmonoborate-monophosphate), NaIn[BP2O7(OH)3]HUANG, Y.-X; MI, J.-X; MAO, S.-Y et al.Zeitschrift für Kristallographie. New crystal structures. 2002, Vol 217, Num 1, pp 7-8, issn 1433-7266Article

Excited state relaxation dynamics and non-radiative energy transfer in fluoroindate glass singly doped with thulium and doubly doped with thulium and terbiumRYBA-ROMANOWSKI, W; GOLŁAB, S; DOMINIAK-DZIK, G et al.Journal of alloys and compounds. 2001, Vol 325, Num 1-2, pp 215-222, issn 0925-8388Article

The influence of the substitution of Te for se on the photoconductive properties of In2Se3-xTe3x thin filmsEL MALIKI, H; MARSILLAC, S; BERNEDE, J. C et al.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 9, pp 1839-1850, issn 0953-8984Article

Conductance gap anomaly in scanning tunneling spectra of MBE-Grown (001) surfaces of III-V compound semiconductorsKASAI, Seiya; NEGORO, Noboru; HASEGAWA, Hideki et al.Applied surface science. 2001, Vol 175-76, pp 255-259, issn 0169-4332Conference Paper

Radioactivity in breast milk following 111In-octreotideCASTRONOVO, F. P; STONE, H; ULANSKI, J et al.Nuclear medicine communications. 2000, Vol 21, Num 7, pp 695-699, issn 0143-3636Article

A study of cylinder design for solid OMVPE sourcesTIMMONS, M; RANGARAJAN, P; STENNICK, R et al.Journal of crystal growth. 2000, Vol 221, pp 635-639, issn 0022-0248Conference Paper

Photoreflectance spectroscopy of InGaAsN/GaAs quantum wells grown by MBSEK, G; RYCZKO, K; MISIEWICZ, J et al.Thin solid films. 2000, Vol 380, Num 1-2, pp 240-242, issn 0040-6090Conference Paper

InxGa1-xAs/GaAs heterocathode in a GaAs millimeter-wave-range Gunn diodeARKUSHA, Yu. V; PROKHOROV, E. D; STOROZHENKO, I. P et al.Journal of communications technology & electronics. 2000, Vol 45, Num 4, pp 467-468, issn 1064-2269Article

Electrical conductivity of the mixed molybdates Li2MII2(MoO4)3 (Mii = Cu, Ni, Co) and Li3MIII(MoO4)3 (Miii = Fe, In, Ga)IVANOV-SHITS, A. K; NISTYUK, A. V; CHABAN, N. G et al.Inorganic materials. 1999, Vol 35, Num 7, pp 756-758, issn 0020-1685Article

Surface properties of indium pnictidesKIROVSKAYA, I. A.Inorganic materials. 1999, Vol 35, Num 5, pp 436-440, issn 0020-1685Article

Caractérisation des quaternaires CuIn(SxSe1-x)2, Cu(GayIn1-y)3Se5 et CuIn3(SzSe1-z)5, par Ellipsométre Spectroscopique et Photoluminescence pour application photovoltaïque = Characterization of the quaternary alloy semiconductors : CuIn(SxSe1-x)2, Cu(GayIn1-y)3Se5 and CuIn3(SzSe1-z)5 by Spectroscopic Ellipsometry and Photoluminescence for photovoltaic applicationZeaiter, Khalil; Llinares, Claude.1999, 165 p.Thesis

Ion beam smoothing of indium-containing III-V compound semiconductorsFROST, F; SCHINDLER, A; BIGL, F et al.Applied physics. A, Materials science & processing (Print). 1998, Vol 66, Num 6, pp 663-668, issn 0947-8396Article

In(PO3)3 stabilised fluoroindate glassesMESSADDEQ, Y; GRANDO, D; MELNIKOV, P et al.Journal of alloys and compounds. 1998, Vol 275-77, pp 81-85, issn 0925-8388Conference Paper

Electrical conduction in POxNyInZ films deposited on InPHBIB, H; BONNAUD, O.Philosophical magazine letters. 1997, Vol 75, Num 2, pp 111-115, issn 0950-0839Article

Synthesis and structure of Ba2InO3X (X = F, Cl, Br) and Ba2ScO3F ; oxide/halide ordering in K2NiF4-type structuresNEEDS, R. L; WELLER, M. T; SCHELER, U et al.Journal of material chemistry. 1996, Vol 6, Num 7, pp 1219-1224, issn 0959-9428Article

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