Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layersSKURIDIN, D; DINH, D. V; PRISTOVSEK, M et al.Applied surface science. 2014, Vol 307, pp 461-467, issn 0169-4332, 7 p.Article

Effect of the nanoscratch resistance of indium nitride thin films in the etching durationHSU, Wen-Nong; SHIH, Teng-Shih.Applied surface science. 2012, Vol 261, pp 610-615, issn 0169-4332, 6 p.Article

Electronic transport properties in aluminum indium nitride nanorods grown by magnetron sputter epitaxyCHEN, Ruei-San; TANG, Chih-Che; CHING-LIEN, Hsiao et al.Applied surface science. 2013, Vol 285, pp 625-628, issn 0169-4332, 4 p., bArticle

Thermal stability of InN epilayers grown by high pressure chemical vapor depositionACHARYA, Ananta R; GAMAGE, Sampath; INDIKA SENEVIRATHNA, M. K et al.Applied surface science. 2013, Vol 268, pp 1-5, issn 0169-4332, 5 p.Article

Study of band offsets in InN/Ge heterojunctionsKUMAR, Mahesh; BHAT, Thirumaleshwara N; RAJPALKE, Mohana K et al.Surface science. 2011, Vol 605, Num 15-16, issn 0039-6028, L33-L37Article

Interaction of hydrogen with InN thin films elaborated on InP(100)KRAWCZYK, M; BILINSKI, A; SOBCZAK, J. W et al.Surface science. 2007, Vol 601, Num 18, pp 3722-3725, issn 0039-6028, 4 p.Conference Paper

PRESSION DE VAPEUR DU NITRURE D'INDIUMGORDIENKO SP; FENOCHKA BV.1977; ZH. FIZ. KHIM.; S.S.S.R.; DA. 1977; VOL. 51; NO 2; PP. 530-531; BIBL. 2 REF.; RESUME DE L'ART. DEPOSE AU VINITI NO 3698-76Article

Thermally activated luminescence in InN nanowiresKOLLI, Sowmya; CHANDRA SHEKHAR PENDYALA; SUNKARA, Mahendra et al.Journal of luminescence. 2013, Vol 141, pp 162-165, issn 0022-2313, 4 p.Article

Influence of growth temperature and deposition duration on the structure, surface morphology and optical properties of InN/YSZ (1 00)ZOITA, N. C; GRIGORESCU, C. E. A.Applied surface science. 2012, Vol 258, Num 16, pp 6046-6051, issn 0169-4332, 6 p.Article

Magnesium adsorption and incorporation in InN (0 0 01 ) and (0001) surfaces: A first-principles studyBELABBES, A; KIOSEOGLOU, J; KOMNINOU, Ph et al.Applied surface science. 2009, Vol 255, Num 20, pp 8475-8482, issn 0169-4332, 8 p.Article

Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxyWANG, J. B; LI, Z. F; CHEN, P. P et al.Acta materialia. 2007, Vol 55, Num 1, pp 183-187, issn 1359-6454, 5 p.Article

Stages of the synthesis of indium nitride with the use of ureaPODSIADLO, S.Thermochimica acta. 1995, Vol 256, Num 2, pp 375-380, issn 0040-6031Article

ELECTROREFLECTANCE OF INN SEMIMETALLIC THIN FILMSTYAGAI VA; SNITKO OV; EVSTIGNEEV AM et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 2; PP. 589-594; ABS. RUS; BIBL. 13 REF.Article

Piezoelectric coefficient of InN films prepared by radio-frequency sputteringWINTREBERT-FOUQUET, M; BUTCHER, K. S. A; GUY, I. L et al.Thin solid films. 2008, Vol 516, Num 21, pp 7267-7270, issn 0040-6090, 4 p.Article

Thermal behavior of nitrided TiO₂/In₂O₃ by TG-DSC-MS combined with PulseTAYU, Hui-Mei; ZHANG, Qing-Hong; QI, Ling-Jun et al.Thermochimica acta. 2006, Vol 440, Num 2, pp 195-199, issn 0040-6031, 5 p.Article

Electrical and electrothermal transport in InN: The roles of defectsMILLER, N; AGER, J. W; SCHAFF, W. J et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4862-4865, issn 0921-4526, 4 p.Conference Paper

In-adlayers on non-polar and polar InN surfaces : Ion scattering and photoemission studiesVEAL, T. D; KING, P. D. C; WALKER, M et al.Physica. B, Condensed matter. 2007, Vol 401-02, pp 351-354, issn 0921-4526, 4 p.Conference Paper

Effect of In incorporation parameters on the electroluminescence of blue―violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor depositionZHAO, D. G; JIANG, D. S; HUI YANG et al.Journal of alloys and compounds. 2012, Vol 540, pp 46-48, issn 0925-8388, 3 p.Article

Indium incorporation in GalnN/GaN quantum well structures on polar and nonpolar surfaces : Polarization-Field Control in Nitride Light EmittersJÖNEN, Holger; ROSSOW, Uwe; SCHOLZ, Ferdinand et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 3, pp 600-604, issn 0370-1972, 5 p.Article

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N CompoundsMUTTA, G. R; RUTERANA, P; DOUALAN, J. L et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 5, pp 1187-1190, issn 0370-1972, 4 p.Article

Effect of composition on the bonding environment of In in InAIN and InGaN epilayersKATSIKINI, M; PINAKIDOU, F; PALOURA, E. C et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 11, pp 2593-2597, issn 1862-6300, 5 p.Conference Paper

CALCULATIONS OF THERMAL FUNCTIONS OF GROUP-III NITRIDESZIEBORAK-TOMASZKIEWICZ, Iwona; GIERYCZ, P.Journal of thermal analysis and calorimetry. 2008, Vol 93, Num 3, pp 693-699, issn 1388-6150, 7 p.Conference Paper

Surface reconstructions on InN and GaN polar and nonpolar surfacesSEGEV, David; DE WALLE, Chris G. Van.Surface science. 2007, Vol 601, Num 4, issn 0039-6028, L15-L18Article

HEAT CAPACITY OF INDIUM NITRIDEZIEBORAK-TOMASZKIEWICZ, Iwona; SWIERZEWSKI, R; GIERYCZ, P et al.Journal of thermal analysis and calorimetry. 2008, Vol 91, Num 2, pp 649-653, issn 1388-6150, 5 p.Article

Theoretical design and performance of In_xGa_1-xN two-junction solar cellsXIAOBIN ZHANG; XIAOLIANG WANG; HONGLING XIAO et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 24, issn 0022-3727, 245104.1-245104.6Article