Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxyWANG, J. B; LI, Z. F; CHEN, P. P et al.Acta materialia. 2007, Vol 55, Num 1, pp 183-187, issn 1359-6454, 5 p.Article

Electronic transport properties in aluminum indium nitride nanorods grown by magnetron sputter epitaxyCHEN, Ruei-San; TANG, Chih-Che; CHING-LIEN, Hsiao et al.Applied surface science. 2013, Vol 285, pp 625-628, issn 0169-4332, 4 p., bArticle

Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layersSKURIDIN, D; DINH, D. V; PRISTOVSEK, M et al.Applied surface science. 2014, Vol 307, pp 461-467, issn 0169-4332, 7 p.Article

Effect of the nanoscratch resistance of indium nitride thin films in the etching durationHSU, Wen-Nong; SHIH, Teng-Shih.Applied surface science. 2012, Vol 261, pp 610-615, issn 0169-4332, 6 p.Article

Stages of the synthesis of indium nitride with the use of ureaPODSIADLO, S.Thermochimica acta. 1995, Vol 256, Num 2, pp 375-380, issn 0040-6031Article

InN, a historic review: From obscurity to controversyBUTCHER, K. S. A.Advanced materials in electronics 2004. 2004, pp 1-24, isbn 81-7736-223-2, 24 p.Book Chapter

Recombination processes with and without momentum conservation in degenerate InNVALCHEVA, E; ALEXANDROVA, S; DIMITROV, S et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 75-79, issn 0031-8965, 5 p.Conference Paper

Micro-raman characterization of In_xGa_1-xN/GaN/Al₂O₃ heterostructuresKONTOS, A. G; RAPTIS, Y. S; PELEKANOS, N. T et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 155336.1-155336.10, issn 1098-0121Article

Short-wavelength GaInNAs/GaAs semiconductor disk lasersVETTER, S. L; HASTIE, J. E; KORPIJARVI, V.-M et al.Electronics Letters. 2008, Vol 44, Num 18, pp 1069-1070, issn 0013-5194, 2 p.Article

Microhardness of indium nitride single crystal filmsQIXIN GUO; YOSHIDA, A.Japanese journal of applied physics. 1994, Vol 33, Num 1A, pp 90-91, issn 0021-4922, 1Article

Broadening of intersubband and interband transitions in InGaN/AIInN multi-quantum wellsGLADYSIEWICZ, M; KUDRAWIEC, R; MISIEWICZ, J et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 19, issn 0022-3727, 195101.1-195101.4Article

Darstellung und Kristallstrukturen von Ca₄In₂N und Sr₄In₂N = Préparation et structures cristallines de Ca₄In₂N et Sr₄In₂N = Preparation and crystal structures of Ca₄In₂N and SR₄In₂NCORDIER, G; RÖNNINGER, S.Zeitschrift für Naturforschung. B, A journal of chemical sciences. 1987, Vol 42, Num 7, pp 825-827, issn 0932-0776Article

Effect of composition on the bonding environment of In in InAIN and InGaN epilayersKATSIKINI, M; PINAKIDOU, F; PALOURA, E. C et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 11, pp 2593-2597, issn 1862-6300, 5 p.Conference Paper

PRESSION DE VAPEUR DU NITRURE D'INDIUMGORDIENKO SP; FENOCHKA BV.1977; ZH. FIZ. KHIM.; S.S.S.R.; DA. 1977; VOL. 51; NO 2; PP. 530-531; BIBL. 2 REF.; RESUME DE L'ART. DEPOSE AU VINITI NO 3698-76Article

Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenationPEARTON, S. J; ABERNATHY, C. R; WISK, P. W et al.Applied physics letters. 1993, Vol 63, Num 8, pp 1143-1145, issn 0003-6951Article

Thermal stability of InN epilayers grown by high pressure chemical vapor depositionACHARYA, Ananta R; GAMAGE, Sampath; INDIKA SENEVIRATHNA, M. K et al.Applied surface science. 2013, Vol 268, pp 1-5, issn 0169-4332, 5 p.Article

Effect of In incorporation parameters on the electroluminescence of blue―violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor depositionZHAO, D. G; JIANG, D. S; HUI YANG et al.Journal of alloys and compounds. 2012, Vol 540, pp 46-48, issn 0925-8388, 3 p.Article

Indium incorporation in GalnN/GaN quantum well structures on polar and nonpolar surfaces : Polarization-Field Control in Nitride Light EmittersJÖNEN, Holger; ROSSOW, Uwe; SCHOLZ, Ferdinand et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 3, pp 600-604, issn 0370-1972, 5 p.Article

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N CompoundsMUTTA, G. R; RUTERANA, P; DOUALAN, J. L et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 5, pp 1187-1190, issn 0370-1972, 4 p.Article

Study of band offsets in InN/Ge heterojunctionsKUMAR, Mahesh; BHAT, Thirumaleshwara N; RAJPALKE, Mohana K et al.Surface science. 2011, Vol 605, Num 15-16, issn 0039-6028, L33-L37Article

Influence of growth temperature and deposition duration on the structure, surface morphology and optical properties of InN/YSZ (1 00)ZOITA, N. C; GRIGORESCU, C. E. A.Applied surface science. 2012, Vol 258, Num 16, pp 6046-6051, issn 0169-4332, 6 p.Article

CALCULATIONS OF THERMAL FUNCTIONS OF GROUP-III NITRIDESZIEBORAK-TOMASZKIEWICZ, Iwona; GIERYCZ, P.Journal of thermal analysis and calorimetry. 2008, Vol 93, Num 3, pp 693-699, issn 1388-6150, 7 p.Conference Paper

Surface reconstructions on InN and GaN polar and nonpolar surfacesSEGEV, David; DE WALLE, Chris G. Van.Surface science. 2007, Vol 601, Num 4, issn 0039-6028, L15-L18Article

Interaction of hydrogen with InN thin films elaborated on InP(100)KRAWCZYK, M; BILINSKI, A; SOBCZAK, J. W et al.Surface science. 2007, Vol 601, Num 18, pp 3722-3725, issn 0039-6028, 4 p.Conference Paper

Thermally activated luminescence in InN nanowiresKOLLI, Sowmya; CHANDRA SHEKHAR PENDYALA; SUNKARA, Mahendra et al.Journal of luminescence. 2013, Vol 141, pp 162-165, issn 0022-2313, 4 p.Article