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Photoelectron Characteristics of HgInTe DetectorZHANG, L; ZHANG, X. L; SUN, W. G et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8193, issn 0277-786X, isbn 978-0-8194-8834-3, 81932X.1-81932X.7, 2Conference Paper

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Multi-level conduction in NiO resistive memory device prepared by solution routeKANNAN, V; SENTHILKUMAR, V; RHEE, J. K et al.Journal of physics. D, Applied physics (Print). 2013, Vol 46, Num 9, issn 0022-3727, 095301.1-095301.5Article

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