Characterization of deep levels and interface states in CuInSe₂HAAK, R; MENEZES, S; BACHMANN, K. J et al.Photovoltaic specialists conference. 19. 1987, pp 961-966Conference Paper

Thin film CuInSe₂ photoelectrochemical cellsSZOT, J; HANEMAN, D.IEEE photovoltaic specialists conference. 18. 1985, pp 1735-1736Conference Paper

Photoluminescence of CuInSe₂ and its intrinsic defect statesABOU-ELFOTOUH, F; ALKUHAIMI, S; MOUSTAFA, R et al.Photovoltaic specialists conference. 19. 1987, pp 770-774Conference Paper

Reaction pathways for copper indium diselenide thin film formation from single and multiple InSe/CuSe bilayer stacksKIM, Maengjun; LEE, Sungho; SOHN, Sangho et al.Thin solid films. 2013, Vol 531, pp 125-130, issn 0040-6090, 6 p.Article

Quality of CuInSe₂ and CdS thin films for solar cellsDHERE, N. G; RIBAS, P. R. F; MOUTINHO, H. R et al.Photovoltaic specialists conference. 19. 1987, pp 1498-1499Conference Paper

Capacitance determination of interfacial states in CuInSe₂ solar cellsTAVAKOLIAN, H; SITES, J. R.IEEE photovoltaic specialists conference. 18. 1985, pp 1065-1068Conference Paper

Characteristics of preliminary cells fabricated using electro-deposited CuInSe₂ filmsSHIH, I; QIU, C. X.Photovoltaic specialists conference. 19. 1987, pp 1291-1294Conference Paper

CuInSe₂ Photovoltaic devices prepared by reactive sputteringLOMMASSON, T. C; TALIEH, H; MEAKIN, J. D et al.Photovoltaic specialists conference. 19. 1987, pp 1285-1290Conference Paper

Tolerance of CuInSe₂ cell performance to variations in film composition and the implications for large area cell manufactureROCHELEAU, R. E; MESKIN, J. D; BIRKMIRE, R. W et al.Photovoltaic specialists conference. 19. 1987, pp 972-976Conference Paper

Reflection loss from polycrystalline CuInSe₂ solar cellsSITES, J. R; MAUK, P. H; JACOBSON, R. D et al.Photovoltaic specialists conference. 19. 1987, pp 818-822Conference Paper

Defect levels in CdS/CulnSe₂ thin-film solar cellsRAMANATHAN, V; NOUFI, R; POWELL, R. C et al.Journal of applied physics. 1988, Vol 63, Num 4, pp 1203-1206, issn 0021-8979Article

Soft X-ray photoemission investigation of the oxidation of CuInSe₂ thin filmsZURCHER, P; NELSON, A. I; JOHNSSON, P et al.Photovoltaic specialists conference. 19. 1987, pp 955-960Conference Paper

Admittance spectroscopy and application to Cu In Se₂ photovoltaic devicesFABICK, L. B; ESKENAS, K. L.IEEE photovoltaic specialists conference. 18. 1985, pp 754-757Conference Paper

Comparison of structural and electrical properties of Cu(In, Ga)Se₂ for substrate and superstrate solar cellsHAUG, F.-J; RUDMANN, D; BILGER, G et al.Thin solid films. 2002, Vol 403-04, pp 293-296, issn 0040-6090Conference Paper

Rapid thermal processing of CIS precursorsKERR, L. L; KIM, S; KINCAL, S et al.sans titre. 2002, pp 676-679, isbn 0-7803-7471-1, 4 p.Conference Paper

The puzzle of Cu(In, Ga)Se₂ (CIGS) solar cells stabilityGUILLEMOLES, J. F.Thin solid films. 2002, Vol 403-04, pp 405-409, issn 0040-6090Conference Paper

Thermodynamic studies of the In-Se systemVASSILEV, G. P; DAOUCHI, B; RECORD, M.-C et al.Journal of alloys and compounds. 1998, Vol 269, Num 1-2, pp 107-115, issn 0925-8388Article

Effects of selenization parameters on growth characteristics of the Cu(In,Ga)Se₂ films deposited by sputtering with a Cu-In-Ga, Cu-In-Ga₂Se₃, or Cu-Ga-In₂Se₃ target and a subsequent selenization procedure at 550―700°CKUO, Dong-Hau; TU, Yung-Chin; MONSEFI, Mehrdad et al.Applied surface science. 2013, Vol 268, pp 22-27, issn 0169-4332, 6 p.Article

Structural and electrical studies on nanostructured InSe thin filmsDARWISH, A. A. A; EL-NAHASS, M. M; BAHLOL, M. H et al.Applied surface science. 2013, Vol 276, pp 210-216, issn 0169-4332, 7 p.Article

CIGS devices with ZIS, In₂S₃, and CdS buffer layersDELAHOY, A. E; AKHTAR, M; CAMBRIDGE, J et al.sans titre. 2002, pp 640-643, isbn 0-7803-7471-1, 4 p.Conference Paper

XPS and electrical studies of buried interfaces in Cu(In, Ga)Se₂ solar cellsCANAVA, B; VIGNERON, J; ETCHEBERRY, A et al.Thin solid films. 2002, Vol 403-04, pp 425-431, issn 0040-6090Conference Paper

Material and device characterization of thin film Cu(InAl)Se₂solar cellsSHAFARMAN, W. N; MARSILLAC, S; PAULSON, P. D et al.sans titre. 2002, pp 519-522, isbn 0-7803-7471-1, 4 p.Conference Paper

Investigation of the X-ray conductivity and X-ray sensitivity of TlInSe₂ single crystalsGUSEINOV, G. D; UMAROV, S. Kh; NURITDINOV, I et al.Atomic energy (New York, N.Y.). 2000, Vol 88, Num 4, pp 319-321, issn 1063-4258Article

Redetermination of the crystal structure of hexaindium heptaselenide, In₆Se₇WALTHER, R; DEISEROTH, H. J.Zeitschrift für Kristallographie. 1995, Vol 210, Num 5, issn 0044-2968, p. 359Article

Cu(In, Ga)Se₂ thin-film evolution during growth: A photoluminescence studyKEYES, Brian M; DIPPO, P; METZGER, W et al.sans titre. 2002, pp 511-514, isbn 0-7803-7471-1, 4 p.Conference Paper