AlyIn1-ySb1-xBix/InSb photodetecting superlatticesBLAGIN, A. V.Inorganic materials. 2003, Vol 39, Num 3, pp 220-221, issn 0020-1685, 2 p.Article

Crystal-chemical approach to predicting the thermal expansion of compounds in the NZP familyPET'KOV, V. I; ORLOVA, A. I.Inorganic materials. 2003, Vol 39, Num 10, pp 1013-1023, issn 0020-1685, 11 p.Article

CuGaTe₂-CuAlTe₂ systemBODNAR', I. V.Inorganic materials. 2003, Vol 39, Num 1, pp 10-14, issn 0020-1685, 5 p.Article

Current-voltage characteristics of TIInX₂-TISmX₂(X = S, Se, Te) alloysGODZHAEV, E. M; GYUL'MAMEDOV, K. D; ALLAKHYAROV, E. A et al.Inorganic materials. 2003, Vol 39, Num 2, pp 113-116, issn 0020-1685, 4 p.Article

Effect of accelerated crucible rotation on the radial impurity distribution in proustite single crystalsDISTANOV, V. E; KIRDYASHKIN, A. G.Inorganic materials. 2003, Vol 39, Num 7, pp 672-675, issn 0020-1685, 4 p.Article

Effect of catalytic alcohol conversion on the mechanical strength of porous ZrO2 and ZrO2 + Y2O3 materialsABUKAIS, A; BURENKOVA, L. N; ZHILINSKAYA, E. A et al.Inorganic materials. 2003, Vol 39, Num 5, pp 503-508, issn 0020-1685, 6 p.Article

Effect of synthesis conditions on the growth rate and structure of diamond filmsALEKSANDROV, V. D; SEL'SKAYA, I. V.Inorganic materials. 2003, Vol 39, Num 5, pp 455-458, issn 0020-1685, 4 p.Article

Electrical conductivity of H2V12-yWyO31+δ.nH2O and HxVxW1-xO3.nH2OVOLKOV, V. L; ZAKHAROVA, G. S.Inorganic materials. 2003, Vol 39, Num 7, pp 725-729, issn 0020-1685, 5 p.Article

Electrical resistivity of La0.7Sr0.3MnO3 ceramics prepared via chelate homogenizationANTIPOV, A. B; BOSAK, A. A; DEDLOVSKAYA, E. M et al.Inorganic materials. 2003, Vol 39, Num 7, pp 741-744, issn 0020-1685, 4 p.Article

Electrochemical preparation of arsenic and its compoundsSMETANIN, A. V; SMIRNOV, M. K; CHERNYKH, I. N et al.Inorganic materials. 2003, Vol 39, Num 1, pp 22-36, issn 0020-1685, 15 p.Article

Erbium and germanium profiles in Si1-xGex layers grown by silicon sublimation-source molecular-beam epitaxy in GeH4SHENGUROV, V. G; SVETLOV, S. P; CHALKOV, V. Yu et al.Inorganic materials. 2003, Vol 39, Num 1, pp 3-5, issn 0020-1685, 3 p.Article

Hydrothermal synthesis of zeolite NaX on porous ceramic supportsBONDAREVA, G. V; RAT'KO, A. I; AZAROV, S. M et al.Inorganic materials. 2003, Vol 39, Num 6, pp 605-609, issn 0020-1685, 5 p.Article

Investigation of the electronic structure of Cd₄GeSe₆ by photoelectrochemical and photoluminescence methodsKOVACH, S; NEMCSICS, A; LABADI, Z et al.Inorganic materials. 2003, Vol 39, Num 2, pp 108-112, issn 0020-1685, 5 p.Article

Nonstoichiometry effect on the thermodynamic properties of uranium dioxide containing alumina, silica, and niobia additionsIVANOVA, N. A; GODIN, Yu. G; BARANOV, V. G et al.Inorganic materials. 2003, Vol 39, Num 7, pp 710-714, issn 0020-1685, 5 p.Article

Optical spectra and transitions of arsenic(III) sulfide in the range 0-40 eVSOBOLEV, V. Val; SOBOLEV, V. V.Inorganic materials. 2003, Vol 39, Num 3, pp 225-228, issn 0020-1685, 4 p.Article

Parametric design of fusion diagrams and solubility of phasesLUPEIKO, T. G; TARASOV, N. I; ZYABLIN, V. N et al.Inorganic materials. 2003, Vol 39, pp S11-S24, issn 0020-1685, SUP1Article

Particle-size effect on the rate of carbon reduction of TiO2LEKANOVA, T. L; RYABKOV, Yu. I; SEVBO, O. A et al.Inorganic materials. 2003, Vol 39, Num 7, pp 715-719, issn 0020-1685, 5 p.Article

Phase transitions and ferroelectric and superionic properties of K3Nb3B2O12-K3Nb3Si2O13 single crystalsKHARITONOVA, E. P; VORONKOVA, V. I; YANOVSKII, V. K et al.Inorganic materials. 2003, Vol 39, Num 2, pp 127-132, issn 0020-1685, 6 p.Article

Polycrystalline zinc selenide for IR optical applicationsGAVRUSHCHUK, E. M.Inorganic materials. 2003, Vol 39, Num 9, pp 883-898, issn 0020-1685, 16 p.Article

Preparation and properties of Metal/CuInSe2 diode structuresABDULLAEV, M. A; KAMILOV, I. K; MAGOMEDOVA, D. Kh et al.Inorganic materials. 2003, Vol 39, Num 2, pp 103-107, issn 0020-1685, 5 p.Article

Preparation and properties of oxygen-selective LaGaO3-based ceramics with mixed ionic-electronic conductionGLAVATSKIKH, T. Yu; VENSKOVSKII, N. U; ALEKSANDROVSKII, V. V et al.Inorganic materials. 2003, Vol 39, Num 7, pp 759-763, issn 0020-1685, 5 p.Article

Preparation and properties of polycrystalline ZnS for IR applicationsYASHINA, E. V.Inorganic materials. 2003, Vol 39, Num 7, pp 663-668, issn 0020-1685, 6 p.Article

Preparation and structure of AgGa1-xInxSe2 single crystalsBADIKOV, V. V; KUZ'MICHEVA, G. M; PANYUTIN, V. L et al.Inorganic materials. 2003, Vol 39, Num 10, pp 1028-1034, issn 0020-1685, 7 p.Article

Preparation of germanium oxynitride films in ammoniaNAKHUTSRISHVILI, I. G; DZHISHIASHVILI, D. A; MKERVALISHVILI, Z. I et al.Inorganic materials. 2003, Vol 39, Num 8, pp 833-835, issn 0020-1685, 3 p.Article

Preparation of semi-insulating vanadium-doped CdTe crystalsPARANCHICH, S. Yu; PARANCHICH, L. D; MAKOGONENKO, V. N et al.Inorganic materials. 2003, Vol 39, Num 4, pp 333-335, issn 0020-1685, 3 p.Article