Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Inorganic silylene")

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 71

  • Page / 3
Export

Selection :

  • and

Dichlorosilylene: rate constant for the gas-phase reaction with nitric oxideSANDHU, V; SAFARIK, I; STRAUSZ, O. P et al.Reviews of chemical intermediates. 1989, Vol 11, Num 1, pp 19-24, issn 0162-7546Article

Role of the trichlorosilyl radical and dichlorosilylene in gas-phase reactions of trichlorosilaneHEINICKE, J; GEHRHUS, B.Journal of analytical and applied pyrolysis. 1994, Vol 28, Num 1, pp 81-92, issn 0165-2370Article

Absolute rate constants for silylene reactions with diatomic moleculesCHU, J. O; BEACH, D. B; ESTES, R. D et al.Chemical physics letters. 1987, Vol 143, Num 2, pp 135-139, issn 0009-2614Article

Ab initio study of the insertions of methylene and silylene into methane, silane, and hydrogenGORDON, M. S; GANO, D. R.Journal of the American Chemical Society. 1984, Vol 106, Num 19, pp 5421-5425, issn 0002-7863Article

Reaction of silicon difluoride with halogens: a reinvestigationSURESH, B. S; THOMPSON, J. C.Journal of the Chemical Society. Dalton transactions. 1987, Num 5, pp 1123-1126, issn 0300-9246Article

Silylene-disilene isomerizations. A theoretical studyNAGASE, S; KUDO, T.Organometallics. 1984, Vol 3, Num 8, pp 1320-1322, issn 0276-7333Article

CHEMILUMINESCENT REACTION OF SIF2 WITH FLUORINE AND THE ETCHING OF SILICON BY ATOMIC AND MOLECULAR FLUORINEMUCHA JA; FLAMM DL; DONNELLY VM et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 6; PP. 4553-4554; BIBL. 10 REF.Article

Gas phase reactions of SiF2 with F2 and Cl2STANTON, A. C; FREEDMAN, A; WORMHOUDT, J et al.Chemical physics letters. 1985, Vol 122, Num 3, pp 190-195, issn 0009-2614Article

The equilibrium geometry of HNSiBOTSCHWINA, P; TOMMEK, M; SEBALD, P et al.The Journal of chemical physics. 1991, Vol 95, Num 10, pp 7769-7770, issn 0021-9606Article

Molecular and electronic structures of metallaspiropentanesGORDON, M. S; BOUDJOUK, P.Journal of the American Chemical Society. 1985, Vol 107, Num 5, pp 1439-1440, issn 0002-7863Article

Matrix isolation studies of the reactions of silicon atoms with molecular hydrogen: the infrared spectrum of silyleneFREDIN, L; HAUGE, R. H; KAFAFI, Z. H et al.The Journal of chemical physics. 1985, Vol 82, Num 8, pp 3542-3545, issn 0021-9606Article

Information theoretic analysis of quantal fluctuations in fluorescence lifetimesENGEL, Y. M; LEVINE, R. D; THOMAN, J. W. JR et al.Journal of physical chemistry (1952). 1988, Vol 92, Num 19, pp 5497-5500, issn 0022-3654Article

Quantal fluctuations in fluorescence lifetimes of individual rovibronic levelsENGEL, Y. M; LEVINE, R. D; THOMAN, J. W. JR et al.The Journal of chemical physics. 1987, Vol 86, Num 11, pp 6561-6563, issn 0021-9606Article

An ab initio study of the insertion reaction SiH2(1A1)+H2→SiH4SAX, A; OLBRICH, G.Journal of the American Chemical Society. 1985, Vol 107, Num 17, pp 4868-4874, issn 0002-7863Article

When might silylenes behave ymore like carbenes? SiHLi, a triplet silyleneCOLVIN, M. E; BREULERT, J; SCHAEFER, H. F. III et al.Tetrahedron (Oxford. Print). 1985, Vol 41, Num 8, pp 1429-1434, issn 0040-4020Article

X~1A1, ã3B1, and Ã1b1 electronic states of silylenes: structures and vibrational frequencies of SiH2, SiHF, and SiF2COLVIN, M. E; GREV, R. S; SCHAEFER, H. F. III et al.Chemical physics letters. 1983, Vol 99, Num 5-6, pp 399-405, issn 0009-2614Article

REMPI/MS detection of SiF2 radicals by (3+1) and (1+3) photoionizationHORWITZ, J. S; DULCEY, C. S; LIN, M. C et al.Chemical physics letters. 1988, Vol 150, Num 1-2, pp 165-170, issn 0009-2614Article

Wide fluctuations in fluorescence lifetimes of individual rovibronic levels in SiH21B1)THOMAN, J. W. JR; STEINFELD, J. I; MCKAY, R. I et al.The Journal of chemical physics. 1987, Vol 86, Num 11, pp 5909-5917, issn 0021-9606Article

Features of the H2SiO potential energy surface. Stabilization of a silicon-oxygen double bondKUDO, T; NAGASE, S.Journal of organometallic chemistry. 1983, Vol 253, Num 3, pp C23-C26, issn 0022-328XArticle

Dynamic stability of silacarbonyl ylideTACHIBANA, A; FUENO, H; OKAZAKI, I et al.International journal of quantum chemistry. 1992, Vol 42, Num 4, pp 929-939, issn 0020-7608Article

Unimolecular dissociation dynamics of disilaneAGRAWAL, P. M; THOMPSON, S. L; RAFF, L. M et al.The Journal of chemical physics. 1990, Vol 92, Num 2, pp 1069-1082, issn 0021-9606Article

Production of Si(1D2) from electronically excited SiH2VAN ZOEREN, C. M; THOMAN, J. W. JR; STEINFELD, J. I et al.Journal of physical chemistry (1952). 1988, Vol 92, Num 1, pp 9-11, issn 0022-3654Article

Effect of electron correlation on the topological properties of molecular charge distributionsGATTI, C; MACDOUGALL, P. J; BADER, R. F. W et al.The Journal of chemical physics. 1988, Vol 88, Num 6, pp 3792-3804, issn 0021-9606Article

Trajectory studies of unimolecular reactions of Si2H4 and SiH2 on a global potential surface fitted to ab initio and experimental dataAGRAWAL, P. M; THOMPSON, D. L; RAFF, L. M et al.The Journal of chemical physics. 1988, Vol 89, Num 2, pp 741-750, issn 0021-9606Article

SiLiF: the competition between electronic effects favoring singlet and triplet ground states. A case studyCOLVIN, M. E; SCHAEFER, H. F. III; BICERANO, J et al.The Journal of chemical physics. 1985, Vol 83, Num 9, pp 4581-4584, issn 0021-9606Article

  • Page / 3