The Soft Punchthrough+ Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron InjectionANTONIOU, Marina; UDREA, Florin; BAUER, Friedhelm et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 3, pp 769-775, issn 0018-9383, 7 p.Article

Comparison of p-channel lateral insulated-gate bipolar transistors with and without collector shortsCHOW, T. P; BALIGA, B. J; PATTANAYAK, D. N et al.IEEE electron device letters. 1990, Vol 11, Num 5, pp 184-186, issn 0741-3106, 3 p.Article

Numerical analysis of short-circuit safe operating areafor p-channel and n-channel IGBT'sIWAMURO, N; OKAMOTO, A; TAGAMI, S et al.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 2, pp 303-309, issn 0018-9383, 7 p.Article

Adjustable high-speed insulated gate bipolar transistorFEI ZHANG; LINA SHI; CHENGFANG LI et al.IEEE transactions on plasma science. 2006, Vol 34, Num 3, pp 1021-1025, issn 0093-3813, 5 p., 3Article

Recent advances in insulated tate bipolar transistor technologyHAMZA YILMAZ; KING OWYANG; CHANG, M. F et al.IEEE transactions on industry applications. 1990, Vol 26, Num 5, pp 831-834, issn 0093-9994, 4 p.Conference Paper

New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditionsBARLINI, D; CIAPPA, M; CASTELLAZZI, A et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1772-1777, issn 0026-2714, 6 p.Conference Paper

Static and dynamic behavior of paralleled IGBT'sLETOR, R.IEEE transactions on industry applications. 1992, Vol 28, Num 2, pp 395-402, issn 0093-9994Conference Paper

Evaluation of modern power semiconductor devices and future trends of convertersBOSE, B. K.IEEE transactions on industry applications. 1992, Vol 28, Num 2, pp 403-413, issn 0093-9994Conference Paper

Snapback-free reverse-conducting IGBT with low turnoff lossBO YI; ZHI LIN; XINGBI CHEN et al.Electronics letters. 2014, Vol 50, Num 9, pp 703-705, issn 0013-5194, 3 p.Article

Towards Achieving the Soft-Punch-Through Superjunction Insulated-Gate Bipolar Transistor Breakdown CapabilityANTONIOU, Marina; UDREA, Florin; BAUER, Friedhelm et al.IEEE electron device letters. 2011, Vol 32, Num 9, pp 1275-1277, issn 0741-3106, 3 p.Article

flexTMS—A Novel Repetitive Transcranial Magnetic Stimulation Device With Freely Programmable Stimulus CurrentsGATTINGER, Norbert; MOESSNANG, Georg; GLEICH, Bernhard et al.IEEE transactions on biomedical engineering. 2012, Vol 59, Num 7, pp 1962-1970, issn 0018-9294, 9 p.Article

A simulation study on novel field stop IGBTs using superjunctionOH, Kwang-Hoon; LEE, Jaegil; LEE, Kyu-Hyun et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 4, pp 884-890, issn 0018-9383, 7 p.Article

High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC EpilayersXIAOKUN WANG; COOPER, James A.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 2, pp 511-515, issn 0018-9383, 5 p.Article

Performance Evaluation of 3.3-kV Planar CIGBT in the NPT Technology With RTA AnodeBALACHANDRAN, A; SWEET, M. R; LUTHER-KING, N et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 5, pp 1439-1444, issn 0018-9383, 6 p.Article

Novel buffer engineering : A concept for fast switching and low loss operation of planar IGBTFEI ZHANG; LINA SHI; WEN YU et al.Microelectronics journal. 2006, Vol 37, Num 7, pp 569-573, issn 0959-8324, 5 p.Article

Modeling voltage derivative during inductive turnoff in thin SOI LIGBTNAPOLI, Ettore; PATHIRANA, Vasantha; UDREA, Florin et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 12, pp 2776-2783, issn 0018-9383, 8 p.Article

A new lateral-IGBT structure with a wider safe operating areaBAKEROOT, B; DOUTRELOIGNE, J; VANMEERBEEK, P et al.IEEE electron device letters. 2007, Vol 28, Num 5, pp 416-418, issn 0741-3106, 3 p.Article

Analytical Modeling of IGBTs: Challenges and Solutions : ADVANCED MODELING OF POWER DEVICES AND THEIR APPLICATIONSBALIGA, B. J.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 2, pp 535-543, issn 0018-9383, 9 p.Article

Advanced Gate Drive Unit With Closed-Loop di_C/dt ControlFINK, Karsten; BERNET, Steffen.IEEE transactions on power electronics. 2013, Vol 28, Num 5, pp 2587-2595, issn 0885-8993, 9 p.Article

Superjunction IGBT Filling the Gap Between SJ MOSFET and Ultrafast IGBTBAUER, Friedhelm; NISTOR, Iulian; MIHAILA, Andrei et al.IEEE electron device letters. 2012, Vol 33, Num 9, pp 1288-1290, issn 0741-3106, 3 p.Article

Compact high repetition rate pseudospark pulse generatorFEI WANG; KUTHI, Andras; GUNDERSEN, Martin A et al.IEEE transactions on plasma science. 2005, Vol 33, Num 4, pp 1177-1181, issn 0093-3813, 5 p., 1Article

600V-IGBT3: trench field stop technology in 70 μm ultra thin wafer technologyRÜTHING, H; UMBACH, F; HELLMUND, O et al.IEE proceedings. Circuits, devices and systems. 2004, Vol 151, Num 3, pp 211-214, issn 1350-2409, 4 p.Conference Paper

Semi-conducteurs de puissance unipolaires et mixtes (partie 2) = Unipolar and mixed power semiconductors (part 2)LETURCQ, Philippe.Techniques de l'ingénieur. Génie électrique. 2002, Vol D4, Num D3109, pp 1-24, issn 0992-5449, 24 p.Article

Overview of trench gated MOS-controlled bipolar semiconductor Power devicesSPULBER, O; SWEET, M; VERSHININ, K et al.SPIE proceedings series. 2002, pp 444-449, isbn 0-8194-4500-2, 2VolConference Paper

CARACTERISATION DES DEGRADATIONS DES IGBTS EN MILIEU INDUSTRIEL = CHARACTERIZATION OF IGBT DEGRADATIONS IN INDUSTRIAL ENVIRONMENTMaouad, Alain; Charles, Jean-Pierre.1999, 160 p.Thesis