Gate oxide defects connected to submicron isolation regions subjected to selective oxidationITSUMI, M; NAKAJIMA, O; MINEGISHI, K et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 5, pp 1160-1164, issn 0013-4651Article

Techniques d'isolement pour intégration à très grande échelleBEERNAERT, D; SCHOLS, G; VAN ISEGHEM, P et al.Revue des Télécommunications. 1982, Vol 57, Num 2, pp 161-166, issn 0373-8582Article

A new mathematical model for semiconductor-on-insulator structuresLAI, P. T.Solid-state electronics. 1990, Vol 33, Num 4, pp 441-444, issn 0038-1101, 4 p.Article

Strategies and test structures for improving isolation between circuit blocksSZMYD, David; GAMBUS, Laurent; WILBANKS, William et al.2002 international conference on microelectronic test structures. 2002, pp 89-93, isbn 0-7803-7464-9, 5 p.Conference Paper

A multi trench analog+logic protection (M-TRAP) for substrate crosstalk prevention in a 0.25μm smart power platform with 100V high-side capabilityPARTHASARATHY, V; KHEMKA, V; ZHU, R et al.International Symposium on Power Semiconductor Devices & ICs. 2004, pp 427-430, isbn 4-88686-060-5, 4 p.Conference Paper

Device modeling for recessed oxide isolation in bipolar LSIsKOTANI, N; KAWAZU, S.Japanese journal of applied physics. 1983, Vol 22, Num 12, pp 1897-1900, issn 0021-4922Article

Innovation in materials with an impact on electrical energy applicationsFRECHETTE, Michel; SAVOIE, Sylvio; DAVID, Eric et al.European journal of electrical engineering. 2010, Vol 13, Num 5-6, pp 765-784, issn 2103-3641, 20 p.Article

Role of abrasives in high selectivity STI CMP slurriesMANIVANNAN, R; RAMANATHAN, S.Microelectronic engineering. 2008, Vol 85, Num 8, pp 1748-1753, issn 0167-9317, 6 p.Article

Integrierte isolatortechnologie zur herstellung von zellbasierten arzneimitteln unter sterilbedingungen = Integrated Isolator Technology based sterile production of cell based drugsNORWIG, Jürgen; JOSMOVIC-ALASEVIC, Olivera; FRITSCH, Karl-Gerd et al.Pharmazeutische Industrie. 2001, Vol 63, Num 7, pp 780-784, issn 0031-711XArticle

Flowfill-process as a new concept for inter-metal-dielectricsHÖCKELE, U; KRÖNINGER, W; PFEIFER, G et al.Materials science forum. 1998, pp 235-238, issn 0255-5476, isbn 0-87849-815-XConference Paper

Use of surface insulation resistance and contact angle measurements to characterize the interactions of three water soluble fluxes with FR-4 substratesJACHIM, J. A; FREEMAN, G. B; TURBINI, L. J et al.IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging. 1997, Vol 20, Num 4, pp 443-451, issn 1070-9894Article

The effect of diffusion on the autoignition of combustible fluids in insulation materialsTRUSCOTT, J. E; BRINDLEY, J; MCINTOSH, A et al.IMA journal of applied mathematics. 1996, Vol 57, Num 3, pp 257-271, issn 0272-4960Article

Rail isolation on the Baltimore central light rail lineSIDORIAK, W.Materials performance. 1993, Vol 32, Num 7, pp 34-39, issn 0094-1492Conference Paper

Nonceramic insulators for transmission linesSCHNEIDER, H. M; HALL, J. F; KARADY, G et al.IEEE transactions on power delivery. 1989, Vol 4, Num 4, pp 2214-2221, issn 0885-8977Conference Paper

THE N⁺-IPOS SCHEME AND ITS APPLICATIONS TO IC'S.ARITA Y; KATO K; SUDO T et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 756-757; BIBL. 8 REF.Article

Circuit partitioning and RF isolation by through-substrate trenchesSINAGA, S. M; POLYAKOV, A; BARTEK, M et al.Proceedings - Electronic Components Conference. 2004, issn 0569-5503, isbn 0-7803-8365-6, 2Vol, Vol 2, 1519-1523Conference Paper

Isolation valves aid Bombay High riser replacements = Des vannes d'isolation aident Bombay High lors des remplacements des colonnes montantesOil & gas journal. 2000, Vol 98, Num 14, issn 0030-1388, p.48Article

Efficacité des différentes façons d'isolation de la voûte en silice du four à fusion pour le verreBOGOMOL'NYJ, M. YA; POPOV, O. N; SIDOROV, V. V et al.Steklo i keramika. 1988, Num 10, pp 3-5, issn 0131-9582Article

U-GROOVE ISOLATION TECHNOLOGYHAYASAKA A; TAMAKI Y.1982; JEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1982; VOL. 19; NO 188; PP. 36-39Article

A new dummy-free shallow trench isolation concept for mixed-signal applicationsBADENES, G; ROOYACKERS, R; AUGENDRE, E et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 10, pp 3827-3832, issn 0013-4651Article

An improved process, metrology and methodology for shallow trench isolation etchGADDAM, Sreedhar; BAUM, Chris.IEEE / SEMI advanced semiconductor manufacturing conference. 2004, pp 93-97, isbn 0-7803-8312-5, 1Vol, 5 p.Conference Paper

Dust and fibre release measurements in full-scale chamberJUHL, H. D.Staub. Reinhaltung der Luft. 1995, Vol 55, Num 1, pp 7-9, issn 0039-0771Article

Digest of technical papers/Symposium on VLSI technology, Maui, September 13-15, 1983Symposium on VLSI technology. 1983, 118 p., isbn 4-930813-05-0Conference Proceedings

Improved SOI image sensor design based on backside illumination on silicon-on-sapphire (SOS) substrateCHAO SHEN; CHEN XU; HUANG, R et al.IEEE International SOI conference. 2002, pp 73-74, isbn 0-7803-7439-8, 2 p.Conference Paper

SOI-specific tri-state inverter and its applicationKIM, Jae-Joon; ROY, Kaushik.IEEE International SOI conference. 2002, pp 145-146, isbn 0-7803-7439-8, 2 p.Conference Paper