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Internal gettering in epi-silicon prepared under different conditionsFRIGERI, C; BORIONETTI, G; GODIO, P et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 48, pp 13127-13134, issn 0953-8984, 8 p.Conference Paper

Study on the interaction between a dislocation and impurities in KCl : Sr2+ single crystals by the Blaha effect. Part II. Interaction between a dislocation and aggregates for various force-distance relations between a dislocation and an impurityKOHZUKI, Y; OHGAKU, T.Journal of materials science. 2001, Vol 36, Num 4, pp 923-928, issn 0022-2461Article

Identification of getter defects in high-energy self-implanted silicon at Rp/2KRAUSE-REHBERG, R; BÖRNER, F; REDMANN, F et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 442-445, issn 0921-4526Conference Paper

Dopant interaction with a dislocation in silicon: local and non-local effectsANTONELLI, Alex; JUSTO, Joao F; FAZZIO, A et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 470-473, issn 0921-4526Conference Paper

Study of indium-defect interactions in diamond using two-dimensional conversion-electron emission channellingDOYLE, B. P; STORBECK, E. J; WAHL, U et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 1, pp 67-78, issn 0953-8984Article

Detection and characterization of stacking faults by light beam induced current mapping and scanning infrared microscopy in siliconVEVE-FOSSATI, C; MARTINUZZI, S.EPJ. Applied physics (Print). 1998, Vol 3, Num 2, pp 123-126, issn 1286-0042Conference Paper

Elastic interaction between screw dislocations and a circular surface crackLIN, K. M; LIN, H. C; CHEN, K. C et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 1997, Vol 224, Num 1-2, pp 216-220, issn 0921-5093Article

High phosphorus gettering efficiency in polycrystalline silicon by optimisation of classical thermal annealing conditionsLOGHMARTI, M; MAHFOUD, K; KOPP, J et al.Physica status solidi. A. Applied research. 1995, Vol 151, Num 2, pp 379-386, issn 0031-8965Article

Stabilizaion of H centres in irradiated LiF:Mg crystalsMYSOVSKY, S; ROGALEV, B; CHERNOV, V et al.Radiation effects and defects in solids. 1995, Vol 134, Num 1-4, pp 493-497, issn 1042-0150Conference Paper

Reaction path of internal gettering of iron in semiconductor siliconFABRY, L; HACKL, B; RANGE, K.-J et al.Japanese journal of applied physics. 1994, Vol 33, Num 1B, pp 510-513, issn 0021-4922, 1Conference Paper

Complex formation of In- and Ag/Cu-doped CdTeRÜB, M; ACHTZIGER, N; MEIER, J et al.Journal of crystal growth. 1994, Vol 138, Num 1-4, pp 285-289, issn 0022-0248Conference Paper

Application of synchrotron-radiation-based x-ray microprobe techniques for the analysis of recombination activity of metals precipitated at Si/SiGe misfit dislocationsVYVENKO, O. F; BUONASSISI, T; ISTRATOV, A. A et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 48, pp 13079-13086, issn 0953-8984, 8 p.Conference Paper

Analysis of iron precipitation in silicon as a basis for gettering simulationsHIESLMAIR, H; ISTRATOV, A. A; MCHUGO, S. A et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 12, pp 4259-4264, issn 0013-4651Article

Formation mechanism of the defects around Y2BaCuO5 inclusions trapped within melt-textured YBa2Cu3O7-δ phaseKIM, C.-J; KUK, I.-H; HONG, G.-W et al.Superlattices and microstructures. 1997, Vol 21, pp 63-69, issn 0749-6036, SUPAArticle

Interaction of particles with grain boundaries upon cooperative migrationMARVINA, L. A; MARVIN, V. B.Physics of metals and metallography. 1996, Vol 82, Num 3, pp 255-257, issn 0031-918XArticle

Influence of oxygen and nitrogen on point defect aggregation in silicon single crystalsAMMON, W. V; DREIER, P; HENSEL, W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 33-41, issn 0921-5107Conference Paper

Interactions Dislocations-Défauts ponctuels dans le Silicium Monocristallin: quantification de l'effet de Puits des Dislocations sur les Auto-Interstitiels par Diffusion d'or = Dislocation-point Defect interactions in Silicon Single crystals: Quantification of the dislocation sink effect on self-interstitials by Gold diffusionMariani, Gabrielle; Pichaud, B.1995, 147 p.Thesis

Dislocation-gold interaction in silicon : the role of dislocations as sinks for self-interstitialsPICHAUD, B; MARIANI, G; TAYLOR, W. J et al.Physica status solidi. A. Applied research. 1993, Vol 138, Num 2, pp 465-471, issn 0031-8965Conference Paper

On the core localization of grain boundary extrinsic dislocations in nickelDECAMPS, Brigitte; PRIESTER, Louisette; THIBAULT, Jany et al.Advanced engineering materials (Print). 2004, Vol 6, Num 10, issn 1438-1656, 794, 814-818 [6 p.]Article

Interaction between a dislocation and an impurity in Kl:Mg2+ single crystalsKOHZUKI, Y; OHGAKU, T.Journal of materials science. 2003, Vol 38, Num 6, pp 1301-1306, issn 0022-2461, 6 p.Article

Study on the applicability of the Friedel relation with dislocation velocity-stress exponentKOHZUKI, Y; OHGAKU, T.Journal of materials science. 2003, Vol 38, Num 22, pp 4487-4492, issn 0022-2461, 6 p.Article

Impurity effects on dislocation activities in SiYONENAGA, I.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 48, pp 13179-13183, issn 0953-8984, 5 p.Conference Paper

Geometrical and structural characteristics of stacking fault-antiphase-boundary interactions in the massive γm phase in a quenched Ti-46.5 at.% Al alloyPING WANG; KUMAR, M; VASUDEVAN, V. K et al.Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties. 2000, Vol 80, Num 1, pp 185-199, issn 1364-2804Article

Interaction between a dislocation and impurities in KCl doped with Li+ or Na+KOHZUKI, Y.Journal of materials science. 2000, Vol 35, Num 9, pp 2273-2277, issn 0022-2461Article

Groping for a suitable force-distance relation between a dislocation and the impurity for KCl:Li+ and KCl:Na+ by the Blaha effectKOHZUKI, Y.Journal of materials science. 1998, Vol 33, Num 23, pp 5613-5619, issn 0022-2461Article

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