Simple method for accurate determination of the mean interface state density of MIS (metal/BN/InP) structuresKOUKAB, A; BATH, A; BAEHR, O et al.Microelectronic engineering. 1999, Vol 49, Num 3-4, pp 211-216, issn 0167-9317Article

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Electronic properties of (100)Ge/Ge(Hf)O₂ interfaces : A first-principles studyHOUSSA, M; POURTOIS, G; CAYMAX, M et al.Surface science. 2008, Vol 602, Num 4, issn 0039-6028, L25-L28Article

Charge-controlled fixation of DNA molecules on silicon surface and electro-physical properties of Au―DNA―Si interfaceBAZLOV, N. V; VYVENKO, O. F; SOKOLOV, P. A et al.Applied surface science. 2013, Vol 267, pp 224-228, issn 0169-4332, 5 p.Article

The complex nature of phthalocyanine/gold interfacesLINDNER, Susi; TRESKE, Uwe; KNUPFER, Martin et al.Applied surface science. 2013, Vol 267, pp 62-65, issn 0169-4332, 4 p.Article

Time-dependent degradation due to negative bias temperature instability of p-MOSFET with an ultra-thin SiON gate dielectricHAN, S. U; KANG, H. S; KANG, B. K et al.Microelectronic engineering. 2006, Vol 83, Num 3, pp 520-527, issn 0167-9317, 8 p.Article

Suppression of Interface State Generation in Si MOSFETs with Biaxial Tensile StrainYI ZHAO; TAKENAKA, Mitsuru; TAKAGI, Shinichi et al.IEEE electron device letters. 2011, Vol 32, Num 8, pp 1005-1007, issn 0741-3106, 3 p.Article

Near infrared absorption of Si nanoparticles embedded in silica filmsSTENGER, I; SIOZADE, L; GALLAS, B et al.Surface science. 2007, Vol 601, Num 14, pp 2912-2916, issn 0039-6028, 5 p.Article

The density of interface states and their relaxation times in Au/Bi4Ti₃O₁₂/SiO₂/n-Si(MFIS) structuresBÜLBÜL, M. M; ALTINDAL, S; PARLAKTÜRK, F et al.Surface and interface analysis. 2011, Vol 43, Num 13, pp 1561-1565, issn 0142-2421, 5 p.Article

Laser-based photoemission micro-spectroscopy for occupied and unoccupied states of inhomogeneous surfacesMUNAKATA, T; SUGIYAMA, T; SONODA, Y et al.Surface science. 2005, Vol 593, Num 1-3, pp 38-42, issn 0039-6028, 5 p.Conference Paper

Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurementsANGERMANN, Heike.Applied surface science. 2014, Vol 312, pp 3-16, issn 0169-4332, 14 p.Conference Paper

Contribution of the interface state continuum to the non-linearities of Schottky (I-V) characteristicsSAHAY, P. P.SPIE proceedings series. 1998, pp 1247-1250, isbn 0-8194-2756-X, 2VolConference Paper

Effect of interface states on the dc characteristics of short channel metal-semiconductor field effect transistorMAJUMDAR, L; CHATTOPADHYAY, P.Applied surface science. 1997, Vol 119, Num 3-4, pp 369-373, issn 0169-4332Article

Interfaces in organic light emitting devices : Quenching of luminescenceCHOONG, V.-E; PARK, Y; HSIEH, B. R et al.SPIE proceedings series. 1997, pp 274-284, isbn 0-8194-2570-2Conference Paper

Hydrogen/deuterium implantation for SI-dielectric interface in nanoscale devicesKUNDU, T; MISRA, D.Proceedings - Electrochemical Society. 2004, pp 346-355, issn 0161-6374, isbn 1-56677-417-9, 10 p.Conference Paper

Brain-computer interface : State of the art and future prospectsPFURTSCHELLER, Gert.EUSIPCO. Conference. 2004, isbn 3-200-00148-8, 3Vol, volI, 509-510Conference Paper

A review of defect generation in the SiO₂ and at its interface with SIZHANG, J. F.Proceedings - Electrochemical Society. 2003, pp 262-290, issn 0161-6374, isbn 1-56677-347-4, 29 p.Conference Paper

An improved time domain analysis of the charge pumping currentMASSON, P; AUTRAN, J.-L; GHIBAUDO, G et al.Journal of non-crystalline solids. 2001, Vol 280, Num 1-3, pp 255-260, issn 0022-3093Conference Paper

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State DensityKUZUM, Duygu; KRISHNAMOHAN, Tejas; PETHE, Abhijit J et al.IEEE electron device letters. 2008, Vol 29, Num 4, pp 328-330, issn 0741-3106, 3 p.Article

Applicability of Charge Pumping on Germanium MOSFETsMARTENS, K; KACZER, B; GRASSER, T et al.IEEE electron device letters. 2008, Vol 29, Num 12, pp 1364-1366, issn 0741-3106, 3 p.Article

Smoothing and passivation of special Si(111) substrates : studied by SPV, PL, AFM and SEM measurementsANGERMANN, H; RAPPICH, J; SIEBER, I et al.Analytical and bioanalytical chemistry. 2008, Vol 390, Num 6, pp 1463-1470, 8 p.Conference Paper

Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFETCHAN, K. H; BENBAKHTI, B; RIDDET, C et al.Microelectronic engineering. 2011, Vol 88, Num 4, pp 362-365, issn 0167-9317, 4 p.Conference Paper

Studying the impact of carbon on device performance for strained-Si MOSFETsLEE, M. H; CHANG, S. T; PENG, C.-Y et al.Thin solid films. 2008, Vol 517, Num 1, pp 105-109, issn 0040-6090, 5 p.Conference Paper

Impact of Uniaxial Strain on Low-Frequency Noise in Nanoscale PMOSFETsKUO, Jack J.-Y; CHEN, William P.-N; PIN SU et al.IEEE electron device letters. 2009, Vol 30, Num 6, pp 672-674, issn 0741-3106, 3 p.Article

Optimization of electric properties of high-k zirconium dioxide by varying deposition and annealing conditionsSILINSKAS, M; LISKER, M; MATICHYN, S et al.Materials science in semiconductor processing. 2006, Vol 9, Num 6, pp 1037-1042, issn 1369-8001, 6 p.Conference Paper