Effect of prolonged ultrasonication on the thermal conductivity of ZnO―ethylene glycol nanofluidsKOLE, Madhusree; DEY, T. K.Thermochimica acta. 2012, Vol 535, pp 58-65, issn 0040-6031, 8 p.Article

Interfacial layers in Ta₂O₅ based stacks and constituent depth profiles by spectroscopic ellipsometryKARMAKOV, Y; PASKALEVA, A; ATANASSOVA, E et al.Applied surface science. 2012, Vol 258, Num 10, pp 4507-4512, issn 0169-4332, 6 p.Article

Diamond deposition on steel substrates using intermediate layersHAUBNER, Roland; LUX, Benno.International journal of refractory metals & hard materials. 2006, Vol 24, Num 5, pp 380-386, issn 0958-0611, 7 p.Article

Influence of Solid CaO and Liquid Slag on Hot Metal DesulfurizationTAKAHASHI, Koichi; UTAGAWA, Keita; SHIBATA, Hiroyuki et al.ISIJ international. 2012, Vol 52, Num 1, pp 10-17, issn 0915-1559, 8 p.Article

Improved photovoltaic effect of polymer solar cells with nanoscale interfacial layersYOUNG IN LEE; KIM, Mina; YOON HO HUH et al.Solar energy materials and solar cells. 2010, Vol 94, Num 6, pp 1152-1156, issn 0927-0248, 5 p.Article

Self-joining of Si₃N₄ using metal interlayersLEMUS-RUIZ, José; LEON-PATINO, Carlos A; DREW, Robin A. L et al.Metallurgical and materials transactions. A, Physical metallurgy and materials science. 2006, Vol 37, Num 1, pp 69-75, issn 1073-5623, 7 p.Conference Paper

Significant enhancement in electromigration resistance and texture of aluminum films using an ultrathin titanium underlayerHONGYAN LIU; FEI ZENG; GUANGSHENG TANG et al.Acta materialia. 2013, Vol 61, Num 12, pp 4619-4624, issn 1359-6454, 6 p.Article

Inter-Layer Exchange Coupling in Fe₂ CrSi/F_e2 VSi Multilayers Fabricated on MgAl₂O₄ SubstratesMIYAWAKI, Tetsuya; TAKAHASHI, Kazunari; FUKATANI, Naoto et al.IEEE transactions on magnetics. 2011, Vol 47, Num 10, pp 2643-2645, issn 0018-9464, 3 p.Conference Paper

Interlayer interaction in high-T_C superconductorsFOLTIN, J; URBAN, V.Physica status solidi. B. Basic research. 2002, Vol 233, Num 2, pp 205-211, issn 0370-1972Article

Ellipsometric approach for evaluation of optical parameters in thin multilayer structuresPANEVA, A; SZEKERES, A.Surface and interface analysis. 1993, Vol 20, Num 4, pp 290-294, issn 0142-2421Article

Interfacial X-ray oscillations during growth of Pd₂Si on Si(111)ROBINSON, I. K; ENG, P. J; BENNETT, P. A et al.Applied surface science. 1992, Vol 60-61, pp 498-504, issn 0169-4332Conference Paper

Supramolecular assembly of (methanol)[10,15,20-tris(4-cyanophenyl)-5-(4-pyridyl)porphyrinato]-zinc(II) by intermolecular hydrogen bonding and weak coordinationMUNIAPPAN, Sankar; LIPSTMAN, Sophia; GOLDBERG, Israel et al.Acta crystallographica. Section C, Crystal structure communications. 2006, Vol 62, issn 0108-2701, m477-m479, 10Article

Study of the transitional layer between the enamel and ironWEIZHONG, C.Vitreous enameller. 1992, Vol 43, Num 3-4, pp 66-77, issn 0042-7519Article

On the barrier height of a metal-semiconductor contact with a thin interfacial layerCHATTOPADHYAY, P; DAW, A. N.Solid-state electronics. 1985, Vol 28, Num 8, pp 831-836, issn 0038-1101Article

Effects of the interfacial layer on electrical characteristics of Al₂O₃/TiO₂/Al₂O₃ thin films for gate dielectricsCHANG EUN KIM; YUN, Ilgu.Applied surface science. 2012, Vol 258, Num 7, pp 3089-3093, issn 0169-4332, 5 p.Article

Role of interfacial layer and clustering on the effective thermal conductivity of CuO―gear oil nanofluidsKOLE, Madhusree; DEY, T. K.Experimental thermal and fluid science. 2011, Vol 35, Num 7, pp 1490-1495, issn 0894-1777, 6 p.Article

Strain relaxation near high-k/Si interface by post-deposition annealingEMOTO, T; AKIMOTO, K; YOSHIDA, Y et al.Applied surface science. 2005, Vol 244, Num 1-4, pp 55-60, issn 0169-4332, 6 p.Conference Paper

Fundamental studies on the intermediate layer of a bipolar membrane. Part II. Effect of bovine serum albumin (BSA) on water dissociation at the interface of a bipolar membraneRONG QIANG FU; TONG WEN XU; WEI HUA YANG et al.Journal of colloid and interface science. 2004, Vol 278, Num 2, pp 318-324, issn 0021-9797, 7 p.Article

Relationship between barrier heights and ideality factors of H-terminated Pb/p-Si contacts with and without the interfacial oxide layerAYDIN, M. E; AKKILIC, K; KILICOGLU, T et al.Applied surface science. 2004, Vol 225, Num 1-4, pp 318-323, issn 0169-4332, 6 p.Article

Investigation of low k interfacial layer characteristics of LaAlO₃ thin films grown on Si (100)WANG, Dong-Sheng.International journal of materials research. 2014, Vol 105, Num 6, pp 588-592, issn 1862-5282, 5 p.Article

The conductance and capacitance-frequency characteristics of Au/pyronine-B/p-type Si/Al contactsQAKAR, M; YILDMM, N; DOFAN, H et al.Applied surface science. 2007, Vol 253, Num 7, pp 3464-3468, issn 0169-4332, 5 p.Article

Effects of ultrathin AlAs interfacial layer on the structure and optical properties of GaInP epilayer grown on germaniumJIA, S. P; CHEN, G. F; HE, W et al.Applied surface science. 2014, Vol 317, pp 828-832, issn 0169-4332, 5 p.Article

Effect of a new pretreatment on the microstructure and thermal conductivity of Cu/diamond compositesHUA BAI; NANGANG MA; JING LANG et al.Journal of alloys and compounds. 2013, Vol 580, pp 382-385, issn 0925-8388, 4 p.Article

THE ORIGIN AND NATURE OF SILICON BAND-GAP STATES AT THE SI/SIO₂ INTERFACESINGH J; MADHUKAR A.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 11; PP. 884-886; BIBL. 11 REF.Article

Effect of interface layer on growth behavior of atomic-layer-deposited Ir thin film as novel Cu diffusion barrierBUM HO CHOI; JONG HO LEE; HONG KEE LEE et al.Applied surface science. 2011, Vol 257, Num 22, pp 9654-9660, issn 0169-4332, 7 p.Article