Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Interstitials")

Filter

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 15634

  • Page / 626
Export

Selection :

  • and

Point defects in silicon crystals studied via complexes with hydrogenSUEZAWA, M; FUKATA, N; TAKADA, Y et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 258-267, issn 0167-9317, 10 p.Conference Paper

The enumeration and transformation of dislocation dipoles. II. The transformation of interstitial dipoles into vacancy dipoles in an open dislocation arrayBROWN, L. M; NABARRO, F. R. N.Philosophical magazine (2003. Print). 2004, Vol 84, Num 3-5, pp 441-450, issn 1478-6435, 10 p.Conference Paper

Effect of oxygen precipitation on voids in bulk siliconXUEGONG YU; DEREN YANG; XIANGYANG MA et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 289-296, issn 0167-9317, 8 p.Conference Paper

A derivation of the Vogel―Fulcher―Tammann relation for supercooled liquidsGRANATO, A. V.Journal of non-crystalline solids. 2011, Vol 357, Num 2, pp 334-338, issn 0022-3093, 5 p.Conference Paper

Oxygen related defects in germaniumCLAUWS, P.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 213-220, issn 0921-5107Conference Paper

A physical basis for irradiation-induced modification of thin-film stressesAMITABH JAIN; UMA JAIN.Thin solid films. 1995, Vol 256, Num 1-2, pp 116-119, issn 0040-6090Article

Geometrical configuration of interstitial oxygen in silicon and in germaniumLIZON-NORDSTRÖM, A; YNDURAIN, F.Solid state communications. 1994, Vol 89, Num 9, pp 819-822, issn 0038-1098Article

Defect causing nonideality in nearly ideal Au/Si Schottky barrierMAEDA, K.Applied surface science. 2000, Vol 159-60, pp 154-160, issn 0169-4332Conference Paper

18 O-labeled interstitial oxygen molecules as probes to study reactions involving oxygen-related species in amorphous SiO2KAJIHARA, Koichi; SKUJA, Linards; HOSONO, Hideo et al.Journal of non-crystalline solids. 2012, Vol 358, Num 24, pp 3524-3530, issn 0022-3093, 7 p.Conference Paper

The sensitivity of thermal donor generation in silicon to self-interstitial sinksVORONKOV, V. V; VORONKOVA, G. I; BATUNINA, A. V et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 10, pp 3899-3906, issn 0013-4651Article

Parametrization of the screening charge density induced by a proton in a metalGERVASONI, J. L; ABRIATA, J. P; PONCE, V. H et al.Radiation effects and defects in solids. 1997, Vol 140, Num 2, pp 133-140, issn 1042-0150Article

Self-diffusion in silicon - Change of a paradigmSEEGER, Alfred.Physica status solidi. B. Basic research. 2011, Vol 248, Num 12, pp 2772-2774, issn 0370-1972, 3 p.Article

Luminescence bands in silicaWEEKS, R. A.International glass journal (Testo stampato). 1999, Num 102, pp 46-50, issn 1123-5063Conference Paper

Acrolein coupling on reduced TiO2(110) : The effect of surface oxidation and the role of subsurface defectsBENZ, Lauren; HAUBRICH, Jan; QUILLER, Ryan G et al.Surface science. 2009, Vol 603, Num 7, pp 1010-1017, issn 0039-6028, 8 p.Article

Photoemission study on the adsorption of ethanol on clean and oxidized rutile TiO2 (110)-1 × 1 surfacesYU KWON KIM; HWANG, Chan-Cuk.Surface science. 2011, Vol 605, Num 23-24, pp 2082-2086, issn 0039-6028, 5 p.Article

Dissociative and molecular oxygen chemisorption channels on reduced rutile TiO2 ( 110 ): An STM and TPD studyLIRA, Estephania; HANSEN, Jonas O; HUO, Peipei et al.Surface science. 2010, Vol 604, Num 21-22, pp 1945-1960, issn 0039-6028, 16 p.Article

Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperaturesMAKARENKO, L. F; LASTOVSKI, S. B; KORSHUNOV, F. P et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 4561-4564, issn 0921-4526, 4 p.Conference Paper

Simulation of mechanical response of point defects in copperKOGURE, Y; KOSUGI, T; DOYAMA, M et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2006, Vol 442, Num 1-2, pp 71-74, issn 0921-5093, 4 p.Conference Paper

Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particlesMAKARENKO, L. F; MOLL, M; EVANS-FREEMAN, J. H et al.Physica. B, Condensed matter. 2012, Vol 407, Num 15, pp 3016-3019, issn 0921-4526, 4 p.Conference Paper

Intrinsic defects in GaN: what we are learning from magnetic resonance studiesWATKINS, George D; CHOW, K. H; JOHANNESEN, P et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 25-31, issn 0921-4526, 7 p.Conference Paper

Interstitial-oxygen induced localized vibrational properties in alpha-quartzKISLOV, A. N; ZATSEPIN, A. F.Journal of non-crystalline solids. 2013, Vol 362, pp 69-72, issn 0022-3093, 4 p.Article

By mistakes we learn : determination of matrix metalloproteinase-8 and tissue inhibitor of matrix metalloproteinase-1 in serum yields doubtful resultsJUNG, Klaus; LEIN, Michael.Journal of clinical periodontology. 2009, Vol 36, Num 1, pp 34-35, issn 0303-6979, 2 p.Article

DIE FIBROSIERENDE ALVEOLITIS = L'ALVEOLITE FIBROSANTEKLEINFELDER H; BOELCSKEI P.1980; THERAPIEWOCHE; ISSN 0040-5973; DEU; DA. 1980; VOL. 30; NO 49; PP. 8208-8222; 8 P.; BIBL. 15 REF.Article

Enhancement of the Structural Stability of Full-Length Clostridial Collagenase by Calcium IonsOHBAYASHI, Naomi; YAMAGATA, Noriko; GOTO, Masafumi et al.Applied and environmental microbiology (Print). 2012, Vol 78, Num 16, pp 5839-5844, issn 0099-2240, 6 p.Article

DIE INTERSTITIELLE LUNGENFIBROSE. = LA FIBROSE PULMONAIRE INTERSTITIELLEUEHLINGER E.1976; THERAPIEWOCHE; DTSCH.; DA. 1976; VOL. 26; NO 22; PP. 3614-3622 (4P.); BIBL. 4 REF.Article

  • Page / 626