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Results 1 to 25 of 23484

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Point defects in silicon crystals studied via complexes with hydrogenSUEZAWA, M; FUKATA, N; TAKADA, Y et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 258-267, issn 0167-9317, 10 p.Conference Paper

The enumeration and transformation of dislocation dipoles. II. The transformation of interstitial dipoles into vacancy dipoles in an open dislocation arrayBROWN, L. M; NABARRO, F. R. N.Philosophical magazine (2003. Print). 2004, Vol 84, Num 3-5, pp 441-450, issn 1478-6435, 10 p.Conference Paper

Effect of oxygen precipitation on voids in bulk siliconXUEGONG YU; DEREN YANG; XIANGYANG MA et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 289-296, issn 0167-9317, 8 p.Conference Paper

Microscopic observation of vacancy and self-interstitial and the formation of Frenkel pairs in InSb by Mössbauer spectroscopySIELEMANN, R; GOVINDARAJ, R; MÜLLER, M et al.Physica. B, Condensed matter. 2009, Vol 404, Num 23-24, pp 5045-5049, issn 0921-4526, 5 p.Conference Paper

Oxygen interstitials enhanced room temperature ferromagnetism in undoped zinc oxideYOU, H; YANG, J; ZHU, J. Y et al.Applied surface science. 2012, Vol 258, Num 10, pp 4455-4459, issn 0169-4332, 5 p.Article

A derivation of the Vogel―Fulcher―Tammann relation for supercooled liquidsGRANATO, A. V.Journal of non-crystalline solids. 2011, Vol 357, Num 2, pp 334-338, issn 0022-3093, 5 p.Conference Paper

Solute and dislocation junction interactionsCHEN, Q; LIU, X.-Y; BINER, S. B et al.Acta materialia. 2008, Vol 56, Num 13, pp 2937-2947, issn 1359-6454, 11 p.Article

Effect of texture on the Snoek relaxation in a commercial rolled steelMAGALAS, L. B; FANTOZZI, G; RUBIANES, J et al.Journal de physique. IV. 1996, Vol 6, Num 8, pp C8.147-C8.150, issn 1155-4339Conference Paper

The role of rapidly diffusing dimers in oxygen loss and the association of thermal donors with small oxygen clustersMCQUAID, S. A; NEWMAN, R. C; MUNOZ, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 171-174, issn 0921-5107Conference Paper

Oxygen related defects in germaniumCLAUWS, P.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 213-220, issn 0921-5107Conference Paper

A physical basis for irradiation-induced modification of thin-film stressesAMITABH JAIN; UMA JAIN.Thin solid films. 1995, Vol 256, Num 1-2, pp 116-119, issn 0040-6090Article

Geometrical configuration of interstitial oxygen in silicon and in germaniumLIZON-NORDSTRÖM, A; YNDURAIN, F.Solid state communications. 1994, Vol 89, Num 9, pp 819-822, issn 0038-1098Article

Tracer correlation factor and atomic displacements due to the collinear interstitialcy mechanismSTEPHENSON, P. C. L; SHOLL, C. A.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1994, Vol 69, Num 1, pp 57-64, issn 0141-8610Article

Two pseudopolymorphic hydrates of brucine : brucine-water (1/4) and brucine-water (1/5.25) at 130 KSMITH, Graham; WERMUTH, Urs D; HEALY, Peter C et al.Acta crystallographica. Section C, Crystal structure communications. 2006, Vol 62, issn 0108-2701, o203-o207, 4Article

Defect causing nonideality in nearly ideal Au/Si Schottky barrierMAEDA, K.Applied surface science. 2000, Vol 159-60, pp 154-160, issn 0169-4332Conference Paper

18 O-labeled interstitial oxygen molecules as probes to study reactions involving oxygen-related species in amorphous SiO2KAJIHARA, Koichi; SKUJA, Linards; HOSONO, Hideo et al.Journal of non-crystalline solids. 2012, Vol 358, Num 24, pp 3524-3530, issn 0022-3093, 7 p.Conference Paper

The sensitivity of thermal donor generation in silicon to self-interstitial sinksVORONKOV, V. V; VORONKOVA, G. I; BATUNINA, A. V et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 10, pp 3899-3906, issn 0013-4651Article

Parametrization of the screening charge density induced by a proton in a metalGERVASONI, J. L; ABRIATA, J. P; PONCE, V. H et al.Radiation effects and defects in solids. 1997, Vol 140, Num 2, pp 133-140, issn 1042-0150Article

Oxygen adsorption on Al (111) surface interstitial site calculated by density functional theoryGUO, Jian-Xin; LI GUAN; FANG BIAN et al.Surface and interface analysis. 2011, Vol 43, Num 6, pp 940-944, issn 0142-2421, 5 p.Article

Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed SiJONES, R; COOMER, B. J; GOSS, J. P et al.Physica status solidi. B. Basic research. 2000, Vol 222, Num 1, pp 133-140, issn 0370-1972Article

Self-diffusion in silicon - Change of a paradigmSEEGER, Alfred.Physica status solidi. B. Basic research. 2011, Vol 248, Num 12, pp 2772-2774, issn 0370-1972, 3 p.Article

Luminescence bands in silicaWEEKS, R. A.International glass journal (Testo stampato). 1999, Num 102, pp 46-50, issn 1123-5063Conference Paper

Constitutive and induced CD44 shedding by ADAM-like proteases and membrane-type 1 matrix metalloproteinaseNAKAMURA, Hiroyuki; SUENAGA, Naoko; TANIWAKI, Kaori et al.Cancer research (Baltimore). 2004, Vol 64, Num 3, pp 876-882, issn 0008-5472, 7 p.Article

Acrolein coupling on reduced TiO2(110) : The effect of surface oxidation and the role of subsurface defectsBENZ, Lauren; HAUBRICH, Jan; QUILLER, Ryan G et al.Surface science. 2009, Vol 603, Num 7, pp 1010-1017, issn 0039-6028, 8 p.Article

Photoemission study on the adsorption of ethanol on clean and oxidized rutile TiO2 (110)-1 × 1 surfacesYU KWON KIM; HWANG, Chan-Cuk.Surface science. 2011, Vol 605, Num 23-24, pp 2082-2086, issn 0039-6028, 5 p.Article

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