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Electron entrainment by superlattice breezers with ionization of impurity centersKRYUCHKOV, S. V.Radiophysics and quantum electronics. 1991, Vol 34, Num 9, pp 835-837, issn 0033-8443Article

Evolution of the parameters of a soliton in a superlattice during ionization of impuritiesKRYUCHKOV, S. V.Soviet physics. Semiconductors. 1991, Vol 25, Num 3, pp 344-345, issn 0038-5700Article

Ionisation energy of magnetodonors in InSbRAYMOND, A; ROBERT, J. L; ZAWADZKI, W et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 13, pp 2381-2389, issn 0022-3719Article

Electrical readout of a spin qubit without double occupancyGREENTREE, Andrew D; HAMILTON, A. R; HOLLENBERG, Lloyd C. L et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 11, pp 113310.1-113310.4, issn 1098-0121Article

Drag of electrons by solitons in a superlattice in the course of ionization of impurity centersKRYUCHKOV, S. V; TYBULEWICZ, A.Soviet physics. Semiconductors. 1991, Vol 25, Num 4, pp 446-447, issn 0038-5700Article

Electroabsorption de la lumière par les centres d'impureté profonds dans les semiconducteurs avec bande de valence à structure complexeMERKULOV, I. A; PAKHOMOV, A. A; YASSIEVICH, I. N et al.Fizika tverdogo tela. 1986, Vol 28, Num 7, pp 2127-2134, issn 0367-3294Article

Section efficace de photoionisation pour les transitions centre h-bande de conductionIMAMOV, EH. Z; KOLCHANOVA, N. M; LOGINOVA, I. D et al.Fizika tverdogo tela. 1984, Vol 26, Num 6, pp 1877-1879, issn 0367-3294Article

Photoconductive response of compensating impurities in photothermal ionization spectroscopy of high-purity silicon and germaniumDARKEN, L. S; HYDER, S. A.Applied physics letters. 1983, Vol 42, Num 8, pp 731-733, issn 0003-6951Article

Symmetrically linearised charge-sheet model for extended temperature rangeZHU, Z; GILDENBLAT, G.Electronics letters. 2009, Vol 45, Num 7, pp 346-348, issn 0013-5194, 3 p.Article

Modelling surface-scattering effects in the solution of the Boltzmann transport equation based on the spherical-harmonics expansionGREINER, A; VECCHI, M. C; RUDAN, M et al.Semiconductor science and technology. 1998, Vol 13, Num 10, pp 1080-1089, issn 0268-1242Article

Asymmetries in photoconductive properties of donor and acceptor impurities in siliconSCLAR, N.Journal of applied physics. 1984, Vol 55, Num 8, pp 2972-2976, issn 0021-8979Article

Effects of current limitation through the dielectric in atmospheric pressure glows in heliumMANGOLINI, L; ANDERSON, C; HEBERLEIN, J et al.Journal of physics. D, Applied physics (Print). 2004, Vol 37, Num 7, pp 1021-1030, issn 0022-3727, 10 p.Article

TEMPERATURE DEPENDENCE OF CARRIER IONIZATION RATES AND SATURATED VELOCITIES IN SILICON.DECKER DR; DUNN CN.1976; J. ELECTRON. MATER.; U.S.A.; DA. 1976; VOL. 4; NO 3; PP. 527-547; BIBL. 2 P.Article

THEORIE DE LA VARIATION PHOTOINDUITE DE L'INDICE DE REFRACTIONLEVANYUK AP; OSIPOV VV.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 12; PP. 3595-3602; BIBL. 12 REF.Article

EXCITONS BOUND TO IONIZED DONORS: APPLICATION OF THE INTERPARTICULE-COORDINATES METHODELKOMOSS SG.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 6; NO 10; PP. 3913-3917; BIBL. 25 REF.Serial Issue

FIZ. TEKH. POLUPROVODN. = INTENSITES DES RAIES DANS LES SPECTRES D'ACCEPTEURS PEU PROFONDS DANS LE GERMANIUMPOLUPANOV AF; KOGAN SH M.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 12; PP. 2338-2341; BIBL. 9 REF.Article

ION NEUTRALIZATION PROCESSES AT INSULATOR SURFACES AND CONSEQUENT IMPURITY MIGRATION EFFECTS IN SIO2 FILMSMCCAUGHAN DV; KUSHNER RA; MURPHY VT et al.1973; PHYS. REV. LETTERS; U.S.A.; DA. 1973; VOL. 30; NO 13; PP. 614-617; BIBL. 12 REF.Serial Issue

IONISATION PAR LE CHAMP ELECTRIQUE DE CENTRES D'IMPURETES A NIVEAUX PROFONDS DANS LES SEMICONDUCTEURSPEREL'MAN NF.1976; FIZ. TVERD. TELA; S.S.S.R.; DA. 1976; VOL. 18; NO 4; PP. 992-997; BIBL. 14 REF.Article

ETUDE DES PROPRIETES OPTIQUES ET PHOTOELECTRIQUES DES CRISTAUX TLGASE2BAKHYSHOV AD; MUSAEVA LG; LEBEDEV AA et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 8; PP. 1548-1551; BIBL. 5 REF.Article

Impurity profiles and radial transport in the EXTRAP-T2 reversed field pinchSALLANDER, J.Plasma physics and controlled fusion. 1999, Vol 41, Num 5, pp 679-691, issn 0741-3335Article

Room-temperature electroluminescence of Er-doped hydrogenated amorphous siliconGUSEV, O; BRESLER, M; KUZNETSOV, A et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 1164-1167, issn 0022-3093, bConference Paper

Electronic excitations of pure and doped rare-gas fluids: theory and experimentSTEINBERGER, I. T; BAER, S.Physical review. B, Condensed matter. 1987, Vol 36, Num 2, pp 1358-1360, issn 0163-1829Article

Green's-function-quantum-defect treatment of impurity photoionization in semiconductorsCOON, D. D; KARUNASIRI, R. P. G.Physical review. B, Condensed matter. 1986, Vol 33, Num 12, pp 8228-8233, issn 0163-1829, 1Article

Photoconductivité à spectre de raies excitée par les rayonnements monochromatique et de fondKOGAN, SH. M.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 4, pp 775-777, issn 0015-3222Article

Courant d'entraînement des électrons lors de l'ionisation à deux photons des centres d'impureté profonds dans les semiconducteursIMANOV, EH. Z; KREVCHIK, V. D.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 8, pp 1417-1421, issn 0015-3222Article

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