kw.\*:("Isolated gate field effect transistor")
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The effect of interfacial traps on the stability of insulated gate devices on InPLILE, D. L; TAYLOR, M. J.Journal of applied physics. 1983, Vol 54, Num 1, pp 260-267, issn 0021-8979Article
Defect generation in silicon-implanted gate insulators of insulated gate field-effect transistorsSUNE, C. T; REISMAN, A; WILLIAMS, C. K et al.Journal of applied physics. 1989, Vol 66, Num 12, pp 5801-5804, issn 0021-8979, 4 p.Article
Current-drift suppressed InP MISFETs with new gate insulatorMIKAMI, O; OKAMURA, M; YAMAGUCHI, E et al.Japanese journal of applied physics. 1984, Vol 23, Num 10, pp 1408-1409, issn 0021-4922, 1Article
Temperature behavior of insulated gate transistor characteristicsJAYANT BALIGA, B.Solid-state electronics. 1985, Vol 28, Num 3, pp 289-297, issn 0038-1101Article
The self-priming operation of GaAs IGFET's in the quasi-normally-off modeADAMA-ACQUAH, R. W; HARRISON, A. J; SWANSON, J. G et al.International journal of electronics. 1985, Vol 59, Num 1, pp 107-112, issn 0020-7217Article
A compact IGFET charge modelSHEU, B. J; SCHARFETTER, D. L; HU, C et al.IEEE transactions on circuits and systems. 1984, Vol 31, Num 8, pp 745-748, issn 0098-4094Article
n-channel lateral insulated gate transistors: Part I-steady-state characterisPATTANAYAK, D. N; ROBINSON, A. L; CHOW, T. P et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 12, pp 1956-1963, issn 0018-9383Article
Shorter turn-off times in insulated gate transistors by proton implantationMOGRO-CAMPERO, A; LOVE, R. P; CHANG, M. F et al.IEEE electron device letters. 1985, Vol 6, Num 5, pp 224-226, issn 0741-3106Article
Analytical solutions for threshold voltage calculations in ion-implanted IGFETsSHENAI, K.Solid-state electronics. 1983, Vol 26, Num 8, pp 761-766, issn 0038-1101Article
Modeling of drift-diffusion currents and mobility degradation in IGFET'sGUERRIERI, R; RUDAN, M.Alta frequenza. 1983, Vol 52, Num 4, pp 290-299, issn 0002-6557Article
Circuit approaches to increasing IGBT switching speedBOISVERT, D. M; LIU, D. K. Y; PLUMMER, J. D et al.IEEE journal of solid-state circuits. 1988, Vol 23, Num 5, pp 1276-1279, issn 0018-9200Article
Improvement of InP MISFET characteristics using infra-red lamp annealingHIROTA, Y; OKAMURA, M; HISAKI, T et al.Electronics Letters. 1985, Vol 21, Num 16, pp 686-688, issn 0013-5194Article
Inversion-mode InP MISFET using a photochemical phosphorus nitride gate insulatorHIROTA, Y; HISAKI, T; MIKAMI, O et al.Electronics Letters. 1985, Vol 21, Num 16, pp 690-691, issn 0013-5194Article
An optically-gated InP misfetGULATI, R; KAUSHIK, S. B; CHANDRA, I et al.Infrared physics. 1984, Vol 24, Num 4, pp 359-361, issn 0020-0891Article
The consequences of the application of a floating gate on d.c.-MISFET characteristicsVOORTHUYZEN, J. A; BERGVELD, P.Solid-state electronics. 1984, Vol 27, Num 4, pp 311-315, issn 0038-1101Article
Using SPICE for the modelization of the static behaviour of the insulated gate transistorGAFFIOT, F; CHANTE, J. P; LE HELLEY, M et al.Journal de physique. Lettres. 1984, Vol 45, Num 18, pp 907-911, issn 0302-072XArticle
New mechanism of gate current in heterostructure insulated gate field-effect transistorsJUN HO BAEK; SHUR, M; DANIELS, R. R et al.IEEE electron device letters. 1986, Vol 7, Num 9, pp 519-521, issn 0741-3106Article
600- and 1200-V bipolar-mode MOSFET's with high current capabilityNAKAGAWA, A; OHASHI, H.IEEE electron device letters. 1985, Vol 6, Num 7, pp 378-380, issn 0741-3106Article
Realization of n-channel and p-channel high-mobility (Al, Ga)As/GaAs heterostructure insulating gate FET's on a planar wafer surfaceCIRILLO, N. C. JR; SHUR, M. S; VOLD, P. J et al.IEEE electron device letters. 1985, Vol 6, Num 12, pp 645-647, issn 0741-3106Article
Comments on the Huang and Taylor model of ion-implanted silicon-gate depletion-mode IGFETMARCINIAK, W; MADURA, H.Solid-state electronics. 1985, Vol 28, Num 3, pp 313-315, issn 0038-1101Article
Analytical model for threshold voltage of ion-implanted short-channel IGFET'sMEHTA, S. K; MURALIDHARAN, R.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 7, pp 1073-1074, issn 0018-9383Article
INVERSION-MODE INSULATED GATE GA0.47 IN0.53 AS FIELD-EFFECT TRANSISTORSWIEDER HH; CLAWSON AR; ELDER DI et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 3; PP. 73-74; BIBL. 9 REF.Article
DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOROGURA S; TSANG PJ; WALKER WW et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1359-1367; BIBL. 23 REF.Article
RESISTANCE LINEAIRE COMMANDEE PAR UNE TENSION.ZOLOTOVA NM.1978; PRIBORY TEKH. EKSPER.; SUN; DA. 1978; VOL. 6; NO 1; PP. 116-117; BIBL. 4 REF.Article
ANALYSIS AND CHARACTERIZATION OF THE DEPLETION-MODE IGFETEL MANSY YA.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 3; PP. 331-340; BIBL. 11 REF.Article