au.\*:("JAMBA DM")
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SEMICONDUCTOR MEASUREMENT TECHNOLOGY. SOME ASPECTS OF DOSE MEASUREMENT FOR ACCURATE ION IMPLANTATION.JAMBA DM.1977; NATION. BUR. STAND., SPEC. PUBL.; U.S.A.; DA. 1977; NO 400-39; PP. (43P.); BIBL. 7 REF.Serial Issue
SECONDARY PARTICLE COLLECTION IN ION IMPLANTATION DOSE MEASUREMENT.JAMBA DM.1978; REV. SCI. INSTRUM.; USA; DA. 1978; VOL. 49; NO 5; PP. 634-638; BIBL. 4 REF.Article
COMPARISON OF SOURCES OF BORON, PHOSPHORUS, AND ARSENIC IONSWILSON RG; JAMBA DM.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 4; PP. 176-179; BIBL. 1 REF.Serial Issue
SEMICONDUCTOR MEASUREMENT TECHNOLOGY: DIFFERENTIAL CAPACITANCE-VOLTAGE PROFILING OF SCHOTTKY BARRIER DIODES FOR MEASURING IMPLANTED DEPTH DISTRIBUTIONS IN SILICONWILSON RG; JAMBA DM.1982; SPEE. PUBL.-NATL. BUR. STAND.; USA; DA. 1982; 400-71; 57 P.; BIBL. 63 REF.Serial Issue
ANGULAR SENSITICITY OF CONTROLLED IMPLANTED DOPING PROFILERWILSON RG; DUNLAP HL; JAMBA DM et al.1978; NATION. BUR. STAND., SPEC. PUBL.; USA; DA. 1978; NO 400-49; 61 P.; BIBL. 21 REF.Article