An Efficient Robust Algorithm for the Surface-Potential Calculation of Independent DG MOSFETJANDHYALA, Srivatsava; MAHAPATRA, Santanu.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 6, pp 1663-1671, issn 0018-9383, 9 p.Article

Piecewise Linearization Technique for Compact Charge Modeling of Independent DG MOSFETJANDHYALA, Srivatsava; ABRAHAM, Aby; ANGHEL, Costin et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 7, pp 1974-1979, issn 0018-9383, 6 p.Article

A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness AsymmetryJANDHYALA, Srivatsava; KASHYAP, Rutwick; ANGHEL, Costin et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 4, pp 1002-1007, issn 0018-9383, 6 p.Article

Improvements in Efficiency of Surface Potential Computation for Independent DG MOSFETABRAHAM, Aby; JANDHYALA, Srivatsava; MAHAPATRA, Santanu et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 4, pp 1199-1202, issn 0018-9383, 4 p.Article