A Monte Carlo simulation model for plasma source ion implantationDEZHEN WANG; TENGCAI MA; YE GONG et al.Journal of applied physics. 1993, Vol 73, Num 9, pp 4171-4175, issn 0021-8979Article

A Tougaard background deconvolution study of the compositional depth profile in amorphous a-Si_1-xC_x:H alloysSASTRY, M; SAINKAR, S. R.Journal of applied physics. 1993, Vol 73, Num 2, pp 767-770, issn 0021-8979Article

A model of laser ablation in nonmetallic inorganic solidsOKANO, A; MATSUURA, A. Y; HATTORI, K et al.Journal of applied physics. 1993, Vol 73, Num 7, pp 3158-3162, issn 0021-8979Article

A proposal of a vacuum micro quantum interference transistorUGAJIN, R; ISHIBASHI, A; FUNATO, K et al.Journal of applied physics. 1993, Vol 73, Num 1, pp 1-7, issn 0021-8979Article

A simple accurate expression of the reduced Fermi energy for any reduced carrier densityVAN CONG, H; DEBIAIS, G.Journal of applied physics. 1993, Vol 73, Num 3, pp 1545-1546, issn 0021-8979Article

A slow positron beam study of vacancy formation in fluorine-implanted siliconFUJINAMI, M; CHILTON, N. B.Journal of applied physics. 1993, Vol 73, Num 7, pp 3242-3245, issn 0021-8979Article

A study of Si outdiffusion from predoped GaAsHORNG-MING YOU; GÖSELE, U. M; TAN, T. Y et al.Journal of applied physics. 1993, Vol 73, Num 11, pp 7207-7216, issn 0021-8979, 1Article

A study of point defect detectors created by Si and Ge implantationMENG, H. L; PRUSSIN, S; LAW, M. E et al.Journal of applied physics. 1993, Vol 73, Num 2, pp 955-960, issn 0021-8979Article

A study of residual stress and the stress-optic effect in mixed crystals of K(D_xH_1-x)₂PO₄DE YOREO, J. J; WOODS, B. W.Journal of applied physics. 1993, Vol 73, Num 11, pp 7780-7789, issn 0021-8979, 1Article

Aging of superconducting Y₁Ba₂Cu₃O_7-x structures on siliconCOPETTI, C. A; SCHUBERT, J; ZANDER, W et al.Journal of applied physics. 1993, Vol 73, Num 3, pp 1339-1342, issn 0021-8979Article

An improved resistor shunted junction model of superconducting metal-oxide-semiconductor field effect transistorsLAI, H; QIAN, G; CAHAY, M et al.Journal of applied physics. 1993, Vol 73, Num 7, pp 3560-3565, issn 0021-8979Article

An in situ transmission electron microscopy study of electron-beam-induced amorphous-to-crystalline transformation of Al₂O₃ films on siliconLIU, J; BARBERO, C. J; CORBETT, J. W et al.Journal of applied physics. 1993, Vol 73, Num 10, pp 5272-5273, issn 0021-8979, 1Article

Analysis and design of microwave amplifiers employing field-emitter arraysCALAME, J. P; GRAY, H. F; SHAW, J. L et al.Journal of applied physics. 1993, Vol 73, Num 3, pp 1485-1504, issn 0021-8979Article

Analysis of GaAs Schottky/tunnel metal-insulator-semiconductor diode characteristics based on an interfacial layer modelIKOMA, H; ISHIDA, T; SATO, K et al.Journal of applied physics. 1993, Vol 73, Num 3, pp 1272-1278, issn 0021-8979Article

Analytical model for the out-diffusion of an exponentially decaying impurity profile. Application to nitrogen in siliconWILLEMS, G. J; MAES, H. E.Journal of applied physics. 1993, Vol 73, Num 7, pp 3256-3260, issn 0021-8979Article

Anomalous Hall effect in InSb layers grown by metalorganic chemical vapor deposition on GaAs substratesBESIKCI, C; CHOI, Y. H; SUDHARSANAN, R et al.Journal of applied physics. 1993, Vol 73, Num 10, pp 5009-5013, issn 0021-8979, 1Article

Approach to study the relation between optical energy gap and hydrogen concentration in hydrogenated amorphous silicon thin filmsFURONG ZHU; JAI SINGH.Journal of applied physics. 1993, Vol 73, Num 9, pp 4709-4711, issn 0021-8979Article

Axial strain-induced microbending losses in double-coated optical fibersSHAM-TSONG SHIUE.Journal of applied physics. 1993, Vol 73, Num 2, pp 526-529, issn 0021-8979Article

Capacitance-voltage profiling through graded heterojucntions : theory and experimentSUNDARAM, M; GOSSARD, A. C.Journal of applied physics. 1993, Vol 73, Num 1, pp 251-260, issn 0021-8979Article

Characterization of He/CH₄ dc glow discharge plasmas by optical emission spectroscopy, mass spectrometry, and actinometryDE LA CAL, E; TAFALLA, D; TABARES, F. L et al.Journal of applied physics. 1993, Vol 73, Num 2, pp 948-954, issn 0021-8979Article

Characterization of Si_xGe_1-x/Si heterostructures for device applications using spectroscopic ellipsometrySIEG, R. M; ALTEROVITZ, S. A; CROKE, E. T et al.Journal of applied physics. 1993, Vol 74, Num 1, pp 586-595, issn 0021-8979Article

Characterization of deep levels introduced by alpha radiation in n-type siliconASGHAR, M; ZAFAR IQBAL, M; ZAFAR, N et al.Journal of applied physics. 1993, Vol 73, Num 8, pp 3698-3708, issn 0021-8979Article

Characterization of the performance of 1-3 type piezocomposites for low-frequency applicationsZHANG, Q. M; WENWU CAO; CROSS, L. E et al.Journal of applied physics. 1993, Vol 73, Num 3, pp 1403-1410, issn 0021-8979Article

Charge density excitations of two-dimensional magnetoplasma in semiconductor superlatticesKUSHWAHA, M. S.Journal of applied physics. 1993, Vol 73, Num 2, pp 792-803, issn 0021-8979Article

Comparison of the diode, switch, and overshoot modes of magnetic-spiker excimer laser excitationDELAPORTE, P; TAYLOR, R. S; LEOPOLD, K. E et al.Journal of applied physics. 1993, Vol 73, Num 11, pp 7093-7101, issn 0021-8979, 1Article