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ELECTRONIC PROPERTIES OF PARAMAGNETIC P(GA) IN GAP.JAROS M.1978; J. PHYS. C; G.B.; DA. 1978; VOL. 11; NO 6; PP. L213-L217; BIBL. 14 REF.Article

DEEP LEVELS IN SEMICONDUCTORSJAROS M.1980; ADV. PHYS.; ISSN 0001-8732; GBR; DA. 1980; VOL. 29; NO 3; PP. 409-525; BIBL. 6 P.Article

TWO-ELECTRON IMPURITY STATES IN GAP:O.JAROS M.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 15; PP. 2455-2462; BIBL. 11 REF.Article

PRISPEVEK K PROBLEMATICE ODMASTOVANI VODNYMI ROZTOKY = DEGREASING WATER SOLUTIONSJAROS M.1980; STROJIRENSTVI; CSK; DA. 1980-10; VOL. 30; NO 10; PP. 627-631; BIBL. 5 REF.Article

A CASE FOR LARGE AUGER RECOMBINATION CROSS SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS.JAROS M.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 25; NO 12; PP. 1071-1074; BIBL. 16 REF.Article

WAVE FUNCTIONS AND OPTICAL CROSS SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS.JAROS M.1977; PHYS. REV.,B; U.S.A.; DA. 1977; VOL. 16; NO 8; PP. 3694-3706; BIBL. 41 REF.Article

LOCALIZED ELECTRON STATES ASSOCIATED WITH GA AND AS VACANCIES IN GAAS.JAROS M.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 23; PP. L550-L553; BIBL. 5 REF.Article

Many-electron excited states of O- in GaPJAROS, M.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 34, pp 6139-6146, issn 0022-3719Article

OPTICAL CROSS SECTIONS ASSOCIATED WITH DEEP LEVELS IN SEMICONDUCTORS. II: COMPARISON OF THEORY WITH EXPERIMENTJAROS M; BANKS PW.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 29; PP. 5965-5978; BIBL. 25 REF.Article

AUGER RECOMBINATION CROSS SECTION ASSOCIATED WITH DEEP TRAPS IN SEMICONDUCTORSRIDDOCH FA; JAROS M.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 33; PP. 6181-6188; BIBL. 19 REF.Article

Electronic properties of semiconductor alloy systemsJAROS, M.Reports on Progress in Physics (Print). 1985, Vol 48, Num 8, pp 1091-1154, issn 0034-4885Article

ELECTRICAL PROPERTIES OF DISLOCATION LINES IN SILICONJAROS M; KIRTON MJ.1982; PHILOSOPHICAL MAGAZINE. B. ELECTRONIC, OPTICAL AND MAGNETIC PROPERTIES; ISSN 0141-8637; GBR; DA. 1982; VOL. 46; NO 1; PP. 85-88; BIBL. 5 REF.Article

A STUDY OF THE ELECTRONIC WAVEFUNCTION ASSOCIATED WITH ISOLATED NITROGEN IMPURITIES IN GAPBANK PW; JAROS M.1981; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 17; PP. 2333-2339; BIBL. 11 REF.Article

ELECTRON CHARGE DISTRIBUTION IN THE VICINITY OF SUBSTITUTIONAL N IN GAP.ROSS SF; JAROS M.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 3; PP. L51-L54; BIBL. 11 REF.Article

GOLD ABUNDANCES IN WEST CARPATHIAN ULTRAMAFIC ROCKS.HOVORKA D; JAROS M.1974; GEOL. ZBOR; CSK; 1974, VOL. 25, NUM. 0002, P. 355 A 362Serial Issue

Electronic properties of semiconductor alloy systemsJAROS, M.Reports on Progress in Physics (Print). 1985, Vol 48, Num 8, pp 1091-1154, issn 0034-4885Article

ON THE ROLE OF LOWEST CONDUCTION BAND MINIMA IN THE FORMATION OF LOCALISED IMPURITY STATES IN DIRECT GAP SEMICONDUCTORSBANKS PW; JAROS M.1982; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1982; VOL. 90; NO 6; PP. 300-302; BIBL. 5 REF.Article

THE NATURE OF DANGLING BONDS AT LINE DEFECTS IN COVALENT SEMICONDUCTORSKIRTON MJ; JAROS M.1981; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 15; PP. 2099-2115; BIBL. 26 REF.Article

ELECTRONIC STATES ASSOCIATED WITH THE SUBSTITUTIONAL NITROGEN IMPURITY IN GAPXAS1-XJAROS M; BRAND S.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 3; PP. 525-539; BIBL. 35 REF.Article

PSEUDOPOTENTIAL CALCULATIONS OF THE EFFECT OF DISPLACEMENT UPON THE IMPURITY LEVELS INTRODUCED BY DEEP DONOR OXYGEN IN GAAS, GAP, SI AND NITROGEN IN DIAMOND.BRAND S; JAROS M.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 21; NO 9; PP. 875-877; BIBL. 12 REF.Article

AN UNDERSTANDING OF OHMIC CONTACT FORMATION WITH GE DOPING OF N-GAAS.JAROS M; HARTNAGEL HL.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 11; PP. 1029-1030; BIBL. 9 REF.Article

Stability of oxygen impurity in silicon and gallium phosphideJAROS, M.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 14, pp L459-L463, issn 0022-3719Article

LOCALIZED STATES IN THE PRESENCE OF A PHOSPHORUS VACANCY IN GAP.JAROS M; SRIVASTAVA GP.1977; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1977; VOL. 38; NO 12; PP. 1399-1401; BIBL. 6 REF.Article

Prieskum a perpesktivy vyuzitia loziska antracitu - Velka Trna = Prospection et perspective d'utilisation de l'anthracite - Velka TrnaJAROS, M.Uhlí. 1989, Vol 37, Num 7, pp 313-317, issn 0041-5812Article

Simple analytic model for heterojunction band offsetsJAROS, M.Physical review. B, Condensed matter. 1988, Vol 37, Num 12, pp 7112-7114, issn 0163-1829Article

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