DEEP LEVELS IN SEMICONDUCTORSJAROS M.1980; ADV. PHYS.; ISSN 0001-8732; GBR; DA. 1980; VOL. 29; NO 3; PP. 409-525; BIBL. 6 P.Article

TWO-ELECTRON IMPURITY STATES IN GAP:O.JAROS M.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 15; PP. 2455-2462; BIBL. 11 REF.Article

PRISPEVEK K PROBLEMATICE ODMASTOVANI VODNYMI ROZTOKY = DEGREASING WATER SOLUTIONSJAROS M.1980; STROJIRENSTVI; CSK; DA. 1980-10; VOL. 30; NO 10; PP. 627-631; BIBL. 5 REF.Article

A CASE FOR LARGE AUGER RECOMBINATION CROSS SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS.JAROS M.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 25; NO 12; PP. 1071-1074; BIBL. 16 REF.Article

WAVE FUNCTIONS AND OPTICAL CROSS SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS.JAROS M.1977; PHYS. REV.,B; U.S.A.; DA. 1977; VOL. 16; NO 8; PP. 3694-3706; BIBL. 41 REF.Article

LOCALIZED ELECTRON STATES ASSOCIATED WITH GA AND AS VACANCIES IN GAAS.JAROS M.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 23; PP. L550-L553; BIBL. 5 REF.Article

Many-electron excited states of O^- in GaPJAROS, M.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 34, pp 6139-6146, issn 0022-3719Article

OPTICAL CROSS SECTIONS ASSOCIATED WITH DEEP LEVELS IN SEMICONDUCTORS. II: COMPARISON OF THEORY WITH EXPERIMENTJAROS M; BANKS PW.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 29; PP. 5965-5978; BIBL. 25 REF.Article

AUGER RECOMBINATION CROSS SECTION ASSOCIATED WITH DEEP TRAPS IN SEMICONDUCTORSRIDDOCH FA; JAROS M.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 33; PP. 6181-6188; BIBL. 19 REF.Article

Stability of oxygen impurity in silicon and gallium phosphideJAROS, M.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 14, pp L459-L463, issn 0022-3719Article

LOCALIZED STATES IN THE PRESENCE OF A PHOSPHORUS VACANCY IN GAP.JAROS M; SRIVASTAVA GP.1977; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1977; VOL. 38; NO 12; PP. 1399-1401; BIBL. 6 REF.Article

Prieskum a perpesktivy vyuzitia loziska antracitu - Velka Trna = Prospection et perspective d'utilisation de l'anthracite - Velka TrnaJAROS, M.Uhlí. 1989, Vol 37, Num 7, pp 313-317, issn 0041-5812Article

Simple analytic model for heterojunction band offsetsJAROS, M.Physical review. B, Condensed matter. 1988, Vol 37, Num 12, pp 7112-7114, issn 0163-1829Article

New electron states of negative ions in semiconductorsJAROS, M.Solid state communications. 1984, Vol 51, Num 6, pp 411-414, issn 0038-1098Article

A STUDY OF ELECTRON BINDING AT THE ISOELECTRONIC NITROGEN CENTRE IN GAP AND INGAP.ROSS SF; JAROS M.1974; J. PHYS. C; G.B.; DA. 1974; VOL. 7; NO 12; PP. L235-L238; BIBL. 9 REF.Article

Comment on : dynamical aspects of luminescence from GaAs-AlAs single quantum wells under hydrostatic pressureJAROS, M.Physical review. B, Condensed matter. 1991, Vol 43, Num 2, pp 1828-1829, issn 0163-1829, 2 p.Article

THE BINDING OF ELECTRONS BY NITROGEN PAVIS IN GAPBRAND S; JAROS M.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 14; PP. 2789-2796; BIBL. 12 REF.Article

LOCALIZED DEFECTS IN III-V SEMICONDUCTORS.JAROS M; BRAND S.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 14; NO 10; PP. 4494-4505; BIBL. 24 REF.Article

ELECTRONIC STRUCTURE OF THE DIVACANCY IN SILICONHUMPHREYS RG; BRAND S; JAROS M et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 12; PP. L337-L343; BIBL. 23 REF.Article

CHOV VEPRU V CSR A VYSLEDKY SETRENI STATNIHO VETERINARNIHO USTAVU V GOTTWALDOVE O MNCZSTVI STETIN JEDNOTLIVYCH PLEMEN VEPRU = L'ELEVAGE DES PORCINS EN TCHECOSLOVAQUIE ET RESULTATS DES RECHERCHES EFFECTUEES PAR L'INSTITUT NATIONAL VETERINAIRE A GOTTWALDOV SUR LA QUANTITE DES SOIES EN FONCTION DE LA RACE DE PORCINSMEDEK L; JAROS M; SUMPELA F et al.1982; KOZARSTVI; ISSN 0023-4338; CSK; DA. 1982; VOL. 32; NO 3; PP. 79-81; ABS. RUS/GER/ENGArticle

DEFECT STATES DOMINATED BY LOCALISED POTENTIALS IN SEMICONDUCTORSBRAND S; JAROS M; RODRIGUEZ CO et al.1981; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 9; PP. 1243-1253; BIBL. 13 REF.Article

SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATIONS OF THE ELECTRONIC STRUCTURE OF A HYDROGEN INTERSTITIAL IN CRYSTALLINE SILICONRODRIGUEZ CO; JAROS M; BRAND S et al.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 31; NO 1; PP. 43-45; BIBL. 11 REF.Article

EXTRINSIC PHOTOCONDUCTIVITY IN HIGH-RESISTIVITY GAAS DOPED WITH OXYGEN.TYLER EH; JAROS M; PENCHINA CM et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 3; PP. 208-210; BIBL. 18 REF.Article

BINDING TO DEEP IMPURITIES IN SEMICONDUCTORSRODRIGUEZ CO; BRAND S; JAROS M et al.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 13; PP. L333-L337; BIBL. 15 REF.Article

SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION OF ELECTRONIC STATES ASSOCIATED WITH A RECONSTRUCTED SILICON VACANCYJAROS M; RODRIGUEZ CO; BRAND S et al.1979; PHYS. REV., B; USA; DA. 1979; VOL. 19; NO 6; PP. 3137-3151; BIBL. 43 REF.Article