ELECTRON IRRADIATION OF FIELD-CONTROLLED THYRISTORSJAYANT BALIGA B.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 5; PP. 805-811; BIBL. 20 REF.Article

DEFECT CONTROL DURING SILICON EXPITAXIAL GROWTH USING DICHLOROSILANEJAYANT BALIGA B.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 5; PP. 1078-1084; BIBL. 19 REF.Article

BARRIER-CONTROLLED CURRENT CONDUCTION IN FIELD-CONTROLLED THYRISTORSJAYANT BALIGA B.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 7; PP. 617-620; BIBL. 12 REF.Article

DEEP PLANAR GALLIUM AND ALUMINIUM DIFFUSION IN SILICONJAYANT BALIGA B.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 2; PP. 292-296; BIBL. 15 REF.Article

HIGH-VOLTAGE DEVICE TERMINATION TECHNIQUES. A COMPARATIVE REVIEWJAYANT BALIGA B.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 5; PP. 173-179; BIBL. 17 REF.Article

TEMPERATURE DEPENDENCE OF FIELD-CONTROLLED THYRISTOR CHARACTERISTICSJAYANT BALIGA B.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 257-264; BIBL. 13 REF.Article

CHEMICAL VAPOR DEPOSITION OF TIN OXIDE FILMS.JAYANT BALIGA B.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 105-107; BIBL. 6 REF.Conference Paper

TECHNOLOGICAL CONSTRAINTS UPON THE PROPERTIES OF DEEP LEVELS USED FOR LIFETIME CONTROL IN THE FABRICATION OF POWER RECTIFIERS AND THYRISTORS.JAYANT BALIGA B.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 1029-1032; BIBL. 1 REF.Article

ANALYTICAL SOLUTIONS FOR THE BREAKDOWN VOLTAGE OF ABRUPT CYLINDRICAL AND SPHERICAL JUNCTIONS.JAYANT BALIGA B; GHANDHI SK.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 9; PP. 739-744; BIBL. 13 REF.Article

HETEROEPITAXIAL INAS FROM TRIETHYLINDIUM AND ARSINE. II. ELECTRICAL PROPERTIES.JAYANT BALIGA B; GHANDHI SK.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 12; PP. 1646-1650; BIBL. 14 REF.Article

HETEROEPITAXIAL INAS GROWN ON GAAS FROM TRIETHYLINDIUM AND ARSINE. I. GROWTH CHARACTERIZATION.JAYANT BALIGA B; GHANDHI SK.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 12; PP. 1642-1646; BIBL. 8 REF.Article

GROWTH OF SILICA AND PHOSPHOSILICATE FILMSJAYANT BALIGA B; GHANDHI SK.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 3; PP. 990-994; BIBL. 9 REF.Serial Issue

THE PREPARATION AND PROPERTIES OF TIN OXIDE FILMS FORMED BY OXIDATION OF TETRAMETHYLTIN.JAYANT BALIGA B; GHANDHI SK.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 6; PP. 941-944; BIBL. 12 REF.Article

Trench-gate base-resitance-controlled thyristors (UMOS-BRT's)JAYANT BALIGA, B.IEEE electron device letters. 1992, Vol 13, Num 12, pp 597-599, issn 0741-3106Article

Power semiconductor devices for the 1990sJAYANT BALIGA, B.Microelectronics journal. 1993, Vol 24, Num 1-2, pp 31-39, issn 0959-8324Article

An overview of smart power technologyJAYANT BALIGA, B.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 7, pp 1568-1575, issn 0018-9383Article

MEASUREMENT OF ENERGY BAND GAP USING AN ELECTROLYTE-SEMICONDUCTOR JUNCTION: WATER-GALLIUM INDIUM ARSENIDE ALLOYS. = MESURE DE BANDES INTERDITES AU MOYEN D'UNE JONCTION SEMICONDUCTEUR-ELECTROLYTE ALLIAGES ARSENIURE D'INDIUM ET DE GALLIUM-EAUJAYANT BALIGA B; RAJARAM BHAT; GHANDHI SK et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 9; PP. 3941-3945; BIBL. 16 REF.Article

Temperature behavior of insulated gate transistor characteristicsJAYANT BALIGA, B.Solid-state electronics. 1985, Vol 28, Num 3, pp 289-297, issn 0038-1101Article

VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM ARSENIDE USING HYDROGEN CHLORIDE GAS.RAJARAM BHAT; JAYANT BALIGA B; GHANDHI SK et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 10; PP. 1378-1382; BIBL. 9 REF.Article

Analysis fo a high-voltage merged p-i-n/Schottky (MPS) rectifierJAYANT BALIGA, B.IEEE electron device letters. 1987, Vol 8, Num 9, pp 407-409, issn 0741-3106Article

Power integrated circuits. A brief overviewJAYANT BALIGA, B.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 12, pp 1936-1939, issn 0018-9383Article

ANOMALOUS DIFFUSION FROM DOPED OXIDES DUE TO DOPANT DEPLETION EFFECTS.JAYANT BALIGA B; RAJARAM BHAT; GHANDHI SK et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 9; PP. 773-774; BIBL. 6 REF.Article

PREPARATION AND PROPERTIES OF ZINC OXIDE FILMS GROWN BY THE OXIDATION OF DIETHYLZINCSHEALY JR; JAYANT BALIGA B; FIELD RJ et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 3; PP. 558-561; BIBL. 9 REF.Article

The dV/dt capability of MOS-gated thyristorsVENKATARAGHAVAN, P; JAYANT BALIGA, B.IEEE transactions on power electronics. 1998, Vol 13, Num 4, pp 660-666, issn 0885-8993Article

Comparison of 6H-SiC, 3C-SiC, and Si for power devicesMOHIT BHATNAGAR; JAYANT BALIGA, B.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 3, pp 645-655, issn 0018-9383Article