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Results 1 to 25 of 26984

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Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaNSTORM, D. F; McCONKIE, T; KATZER, D. S et al.Journal of crystal growth. 2015, Vol 409, pp 14-17, issn 0022-0248, 4 p.Article

Metalorganic vapor phase epitaxy growth of ternary tetradymite Bi2Te3-xSex compoundsKUZNETSOV, P. I; YAKUSHCHEVA, G. G; LUZANOV, V. A et al.Journal of crystal growth. 2015, Vol 409, pp 56-61, issn 0022-0248, 6 p.Article

Precipitation of biomimetic fluorhydroxyapatite/polyacrylic acid nanostructuresROCHE, Kevin J; STANTON, Kenneth T.Journal of crystal growth. 2015, Vol 409, pp 80-88, issn 0022-0248, 9 p.Article

Self-assembled growth of inclined GaN nanorods on (10 - 10) m-plane sapphire using metal-organic chemical vapor depositionSOORYONG CHAE; KYUSEUNG LEE; JONGJIN JANG et al.Journal of crystal growth. 2015, Vol 409, pp 65-70, issn 0022-0248, 6 p.Article

Characterization of {11―22} GaN grown using two-step growth technique on shallowly etched r-plane patterned sapphire substratesFURUYA, H; HASHIMOTO, Y; YAMANE, K et al.Journal of crystal growth. 2014, Vol 391, pp 41-45, issn 0022-0248, 5 p.Article

Controlling indium incorporation in InGaN barriers with dilute hydrogen flowsKOLESKE, D. D; WIERER, J. J; FISCHER, A. J et al.Journal of crystal growth. 2014, Vol 390, pp 38-45, issn 0022-0248, 8 p.Article

Crystal growth of calcium carbonate in silk fibroin/sodium alginate hydrogelJINFA MING; BAOQI ZUO.Journal of crystal growth. 2014, Vol 386, pp 154-161, issn 0022-0248, 8 p.Article

Czochralski growth of heavily tin-doped Si crystalsYONENAGA, I; TAISHI, T; INOUE, K et al.Journal of crystal growth. 2014, Vol 395, pp 94-97, issn 0022-0248, 4 p.Article

Defect analysis in AlGaN layers on AIN templates obtained by epitaxial lateral overgrowthMOGILATENKO, Anna; KULLER, Viola; KNAUER, Arne et al.Journal of crystal growth. 2014, Vol 402, pp 222-229, issn 0022-0248, 8 p.Article

Dendritic microstructure formation in a directionally solidified Al―11.6Cu―0.85Mg alloyZHANG, X. F; ZHAO, J. Z.Journal of crystal growth. 2014, Vol 391, pp 52-58, issn 0022-0248, 7 p.Article

Deposition of binary, ternary and quaternary metal selenide thin films from diisopropyldiselenophosphinato-metal precursorsMAHBOOB, Sumera; MALIK, Sajid N; HAIDER, Nazre et al.Journal of crystal growth. 2014, Vol 394, pp 39-48, issn 0022-0248, 10 p.Article

Development of grain structures of multi-crystalline silicon from randomly orientated seeds in directional solidificationWONG, Y. T; HSU, C; LAN, C. W et al.Journal of crystal growth. 2014, Vol 387, pp 10-15, issn 0022-0248, 6 p.Article

Effect of Ga deposition rates on GaSb nanostructures grown by droplet epitaxyKUNRUGSA, Maetee; KIRAVITTAYA, Suwit; PANYAKEOW, Somsak et al.Journal of crystal growth. 2014, Vol 402, pp 285-290, issn 0022-0248, 6 p.Article

Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1 eV optical bandgapTOPORKOV, M; AVRUTIN, V; OKUR, S et al.Journal of crystal growth. 2014, Vol 402, pp 60-64, issn 0022-0248, 5 p.Article

Epitaxial growth of Fe islands on LaAlO3 (001) substratesZANOUNI, Mohamed; BEN AZZOUZ, Chiraz; BISCHOFF, Jean-Luc et al.Journal of crystal growth. 2014, Vol 391, pp 121-129, issn 0022-0248, 9 p.Article

Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma - effect of TMG flow rate and VHF powerYI LU; KONDO, Hiroki; ISHIKAWA, Kenji et al.Journal of crystal growth. 2014, Vol 391, pp 97-103, issn 0022-0248, 7 p.Article

Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth bv use of HCl in-situ etchingBERG, Alexander; LEHMANN, Sebastian; VAINORIUS, Neimantas et al.Journal of crystal growth. 2014, Vol 386, pp 47-51, issn 0022-0248, 5 p.Article

Growth kinetics evaluation of hydrothermally synthesized β-FeOOH nanorodsCHOWDHURY, Mahabubur; FESTER, Veruscha; KALE, Girish et al.Journal of crystal growth. 2014, Vol 387, pp 57-65, issn 0022-0248, 9 p.Article

Growth of Cu2ZnSnS4 crystals by the directional freezing method with an induction heaterMAI, Duc-Luan; PARK, Hyeon-Jeong; CHOI, In-Hwan et al.Journal of crystal growth. 2014, Vol 402, pp 104-108, issn 0022-0248, 5 p.Article

Growth of Ga(AsBi) on GaAs by continuous flow MOVPELUDEWIG, P; BUSHELL, Z. L; NATTERMANN, L et al.Journal of crystal growth. 2014, Vol 396, pp 95-99, issn 0022-0248, 5 p.Article

Growth of ultra-long sodium tungsten oxide and tungsten oxide nanowires: Effects of impurity and residue depositionTAO SHENG; CHAVVAKULA, Padmanabha P; BAOBAO CAO et al.Journal of crystal growth. 2014, Vol 395, pp 61-67, issn 0022-0248, 7 p.Article

Homoepitaxial growth of AlN layers on freestanding AIN substrate by metalorganic vapor phase epitaxyMORISHITA, Tomohiro; IWAYA, Motoaki; TAKEUCHI, Tetsuya et al.Journal of crystal growth. 2014, Vol 390, pp 46-50, issn 0022-0248, 5 p.Article

Impact of strained GaAs spacer between InP emitter and GaAs1―ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1―ySby/InP DHBTsHOSHI, Takuya; KASHIO, Norihide; SUGIYAMA, Hiroki et al.Journal of crystal growth. 2014, Vol 395, pp 31-37, issn 0022-0248, 7 p.Article

Improved GaN-on-Si epitaxial quality by incorporating various SixNy interlayer structuresWANG, Tzu-Yu; OU, Sin-Liang; HORNG, Ray-Hua et al.Journal of crystal growth. 2014, Vol 399, pp 27-32, issn 0022-0248, 6 p.Article

In-situ observation of isothermal CaSiO3 crystallization in CaO-Al2O3-SiO2 melts: A study of the effects of temperature and compositionLIU, Jing-Jing; GONG CHEN; YAN, Peng-Cheng et al.Journal of crystal growth. 2014, Vol 402, pp 1-8, issn 0022-0248, 8 p.Article

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