High-performance submicrometer AlIn-As-GaInAs HEMT'sMISHRA, U. K; BROWN, A. S; JELLOIAN, L. M et al.IEEE electron device letters. 1988, Vol 9, Num 1, pp 41-43, issn 0741-3106Article

A 2-GHz three-stage AlInAs-GaInAs-InP HEMT MMIC low-noise amplifierROSENBAUM, S. E; JELLOIAN, L. M; LARSON, L. E et al.IEEE microwave and guided wave letters. 1993, Vol 3, Num 8, pp 265-267, issn 1051-8207Article

Ultra-high-speed digital circuit performance in 0.2-μm gate-length AlInAs/GaInAs HEMT technologyMISHRA, U. K; JENSEN, J. F; BROWN, A. S et al.IEEE electron device letters. 1988, Vol 9, Num 9, pp 482-484, issn 0741-3106Article

K-band GalnAs/InP channel power HEMTsMATLOUBIAN, M; LIU, T; JELLOIAN, L. M et al.Electronics Letters. 1995, Vol 31, Num 9, pp 761-762, issn 0013-5194Article

V-band high-efficiency high-power AllnAs/GaInAs/InP HEMT'sMEHRAN MATLOUBIAN; JELLOIAN, L. M; BROWN, A. S et al.IEEE transactions on microwave theory and techniques. 1993, Vol 41, Num 12, pp 2206-2210, issn 0018-9480Article

155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillatorsROSENBAUM, S. E; KORMANYOS, B. K; JELLOIAN, L. M et al.IEEE transactions on microwave theory and techniques. 1995, Vol 43, Num 4, pp 927-932, issn 0018-9480, 2Conference Paper

50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsNGUYEN, L. D; BROWN, A. S; THOMPSON, M. A et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 9, pp 2007-2014, issn 0018-9383Article

Self-aligned high electron mobility transistor gate fabrication using focused ion beamsATKINSON, G. M; KUBENA, R. L; LARSON, L. E et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 6, pp 3506-3510, issn 0734-211XConference Paper